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| 2SK3462 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3462 Switching Regulator, DC-DC Converter and Motor Drive Applications * * * * * 4 V Gate drive Low drain-source ON resistance: RDS (ON) = 1.2 (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 100 A (VDS = 250 V) Enhancement-mode: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 250 250 20 3 6 20 36.2 3 2 150 -55~150 A W mJ A mJ C C Unit V V V Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA SC-64 2-7B1B Weight: 0.36 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 6.25 125 Unit C/W C/W Note 1: Please use devices on conditions that the channel temperature is below 150C. Note 2: VDD = 50 V, Tch = 25C, L = 6.7 mH, IAR = 3 A, RG = 25 W Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. JEDEC JEITA TOSHIBA SC-64 2-7J1B Weight: 0.36 g (typ.) 1 2002-09-04 2SK3462 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge tf VDD ~ 100 V toff Qg Qgs Qgd VDD ~ 200 V, VGS = 10 V, ID = 3 A Duty < 1%, tw = 10 ms = 3/4 3/4 3/4 3/4 30 12 6 6 Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) iYfsi Ciss Crss Coss tr ton 10 V VGS 0V 4.7 W ID = 1.5 A VOUT VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 250 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 1.5 A VDS = 10 V, ID = 1.5 A Min 3/4 3/4 250 1.5 3/4 0.5 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 1.2 2.2 267 32 98 5 20 5 Max 10 100 3/4 3.5 1.7 3/4 3/4 3/4 pF Unit mA mA V V W S 3/4 3/4 3/4 3/4 3/4 3/4 3/4 ns RL = 67 W 3/4 3/4 3/4 3/4 3/4 nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition 3/4 3/4 IDR = 3 A, VGS = 0 V IDR = 3 A, VGS = 0 V, dIDR/dt = 100 A/ms Min 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 125 470 Max 3 6 -2.0 3/4 3/4 Unit A A V ns nC Marking K3462 Lot Number Type Month (starting from alphabet A) Year (last number of the christian era) 2 2002-09-04 2SK3462 ID - VDS 3 Common source Tc = 25C Pulse test 15 2 4.2 10 8 6 6 4.6 Common source Tc = 25C Pulse test ID - VDS 15 10 8 5 4 6 5.5 4.4 (A) ID Drain current Drain current ID (A) 4.5 VGS = 4 V 1 2 VGS = 4 V 0 0 2 4 6 0 0 10 20 30 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 6 Common source VDS = 10 V Pulse test 10 VDS - VGS Common source Tc = 25C Pulse test (V) 5 8 (A) 4 ID VDS Drain-source voltage 6 3A 4 25 Tc = -55C 100 2 Drain current 3 2 1 ID = 1 A 0 0 1 2 3 4 5 6 0 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) iYfsi - ID 10 Common source VDS = 10 V Pulse test Tc = -55C 25 3 RDS (ON) - ID 10 5 Common source Tc = 25C VGS = 10 V Pulse test (S) 5 3 Forward transfer admittance iYfsi 1 Drain-source ON resistance RDS (ON) (W) 3 5 10 100 1 0.5 0.3 0.5 0.3 0.1 0.1 0.3 0.5 1 0.1 0.01 0.03 0.1 0.3 1 3 10 Drain current ID (A) Drain current ID (A) 3 2002-09-04 2SK3462 RDS (ON) - Tc (W) 5 Common source VGS = 10 V Pulse test ID = 3 A 3 ID = 1 A 2 100 Common source Tc = 25C Pulse test IDR - VDS RDS (ON) 4 Drain reverse current IDR (A) 10 Drain-source on resistance 1 VGS = 10 V 1 5 3 0 -80 -40 0 40 80 120 160 0.1 0 -0.2 -0.4 -0.6 0, -1 -0.8 -1.0 -1.2 -1.4 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 10 5 Vth - Tc Common source VDS = 10 V ID = 1 mA Pulse test 100 Coss Gate threshold voltage Vth (V) Ciss 4 (pF) Capacitance C 3 2 Crss 10 1 Common source VGS = 1 0.1 0.3 1 3 10 30 100 0 -80 -40 0 40 80 120 160 Case temperature Tc (C) Drain-source voltage VDS (V) PD - Tc 40 250 Dynamic input/output characteristics Common source ID = 3 A Tc = 25C Pulse test 25 (W) (V) 200 20 PD VDS Drain power dissipation Drain-source voltage 100 50 VDD = 200 V 20 100 10 10 50 5 0 0 40 80 120 160 200 0 0 5 10 15 20 0 25 Case temperature Tc (C) Total gate charge Qg (nC) 4 2002-09-04 Gate-source voltage 150 15 VGS 30 (V) 2SK3462 rth - tw 10 Normalized transient thermal impedance rth (t)/Rth (ch-a) 5 3 1 0.5 0.3 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.05 PDM Single pulse t T Duty = t/T Rth (ch-c) = 6.25C/W 100 m 1m 10 m 100 m 1 10 0.03 0.01 0.01 10 m Pulse width tw (S) Safe operating area 100 50 100 EAS - Tch (mJ) Avalanche energy EAS ID max (pulsed) * ID max (continuous) 100 ms * 1 ms * DC 30 80 10 5 3 60 (A) 40 Drain current ID 1 0.5 0.3 20 0 25 50 75 100 125 150 0.1 0.05 * Single nonrepetitive pulse Tc = 25C 0.03 Curves must be derated linearly with increase in temperature. 0.01 1 VDSS max 3 5 10 30 50 100 300 500 1000 Channel temperature (initial) Tch (C) 15 V -15 V BVDSS IAR VDD VDS Drain-source voltage VDS (V) Test circuit RG = 25 W VDD = 50 V, L = 6.7 mH AS = Wave form ae o 1 B VDSS / x L x I2 x c cB 2 - VDD / e VDSS o 5 2002-09-04 2SK3462 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-09-04 |
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