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| MWS11-PH4x-CS W-CDMA Power Amplifier A MICROSEMI COMPANY PRELIMINARY DESCRIPTION KEY FEATURES W W W.Microsemi .COM The MWS W-CDMA is a highefficiency linear amplifier targeting 3.5V mobile handheld systems. The device is manufactured in an advanced InGaP/GaAs Heterojunction Bipolar Transistor (HBT) RF IC fab process. It is designed for use as a final RF amplifier in 3.5V W-CDMA and CDMA2000, spread spectrum systems, and other linear applications in the 1800MHz to 2000MHz band. There are two 16-pin package versions for this Power Amplifier. One is a 3mm x 3mm chip scale package (CSP) with external input/output match and the other is an internally I/O matched module. ! ! ! ! ! Single 3.5V Supply 27dBm Linear Output Power 25dB Power Gain >40% Linear Efficiency <40mA Idle Current APPLICATIONS IMPORTANT: For the most current data, consult MICROSEMI's website: http://www.microsemi.com ! 3V 1920-1980 W-CDMA Handsets ! 3V 1850-1910 CMDA2000 Handsets ! Spread Spectrum Systems ! Other Linear Wireless Applications PRODUCT HIGHLIGHT 16-Pin Leadless Package TOP BOTTOM 3mm 3mm PACKAGE DATA PACKAGE DATA Actual Size PACKAGE ORDER INFO TJ (C) Type W-CDMA CDMA-2000 L Plastic MLP 16-PIN MWS11-PH41-CS MWS11-PH43-CS Copyright 2000 Rev. 0.3,2001-06-21 Microsemi Micro WaveSys 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 MWS11-PH4x-CS W-CDMA Power Amplifier A MICROSEMI COMPANY PRELIMINARY ABSOLUTE MAXIMUM RATINGS PACKAGE PIN OUT W W W.Microsemi .COM Supply Voltage (RF Off) ............................................................................ 8.0VDC Supply Voltage (POUT<31 dBm) ................................................................. 5.0VDC Control Voltage (VREF) ............................................................................... 3.0VDC Input RF Power ............................................................................................ 6dBm Operating Case Temperature ......................................................... -30C to 100C Storage Temperature ..................................................................... -30C to 150C Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal 13 14 15 16 12 11 10 9 8 7 6 5 1 2 3 4 MLP PACKAGE (Bottom View) FUNCTIONAL PIN DESCRIPTION (16 PIN) THREE STAGE VERSION PIN NAME RF IN(5) DESCRIPTION RF input. A DC block capacitor of >20 pF is required. Input impedance match can be achieved by using a shunt capacitor followed by a section of transmission line. First stage bias current control voltage. The VB1 pin can be connected with the second stage control voltage (VB2) into a single reference voltage through an external resistor bridge. Second stage bias current control voltage. The VB2 pin can be connected with VB1 into a single reference voltage through an external resistor bridge. Supply for the bias reference and control circuits. Power supply for first stage and interstage match. VC1 should be fed through an inductive line terminated with a 100 pF bypassing capacitor on the supply side. RF output and power supply for the second stage. A DC block capacitor of >20 pF is required following the external output impedance matching network. The biasing may be provided by a quarter-wavelength transmission line terminated with a 100 pF bypassing capacitor on the supply side. Ground for the bias reference and control circuits. VB1(3) VB2(1) VCC(16) VC1(4) RF OUT (9,10,11,12) GND (2) PACKAGE DATA PACKAGE DATA Copyright 2000 Rev. 0.3,2001-06-21 Microsemi Micro WaveSys 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 2 MWS11-PH4x-CS W-CDMA Power Amplifier A MICROSEMI COMPANY PRELIMINARY ELECTRICAL CHARACTERISTICS Test conditions: T = 25C, VCC = 3.5V unless otherwise specified. Parameter Frequency Range Nominal Linear Output Power (WCDMA Modulation) Power Gain Second Harmonic Third Harmonic Fourth Harmonic Power Added Efficiency Adjacent Channel Power Rejection @5 MHz @10 MHz PAE ACPR VCC = 3.5V at 27dBm output power ACPR-ALT -48 dBc VCC = 3.5V at 27dBm output power 40 -38 W W W.Microsemi .COM Symbol f Pout Gp Test Conditions MWS11-PHxx-CS Min Typ Max 1920 27 23 25 -40 -40 -40 1980 Units MHz dBm dB dBc dBc dBc % dBc Quiescent Current Icq 38 40 mA Input VSWR Output Load VSWR No oscillations < 2:1 >10:1 ELECTRICALS ELECTRICALS Power supply Voltage 3 3.5 5 V Copyright 2000 Rev. 0.3,2001-06-21 Microsemi Micro WaveSys 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 3 MWS11-PH4x-CS W-CDMA Power Amplifier A MICROSEMI COMPANY PRELIMINARY EVALUATION BOARD W W W.Microsemi .COM Vc1 Vb1 Vb2 Vcc Gnd Vc2 RF Output RF Input Router-Milled 10 mil GETEK PCB Board Size: 2.0" x 1.8" APPLICATION APPLICATION Copyright 2000 Rev. 0.3,2001-06-21 Microsemi Micro WaveSys 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 4 MWS11-PH4x-CS W-CDMA Power Amplifier A MICROSEMI COMPANY PRELIMINARY NOTES W W W.Microsemi .COM NOTES NOTES Copyright 2000 Rev. 0.3,2001-06-21 Microsemi Micro WaveSys 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 5 |
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