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| 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY ISO9001 Certified MIL-PRF-19500 POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology .... Beginning in 1984 with the introduction of Power MOS IV(R), APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as a technological leader in MOS controlled devices and FREDs and to deliver products which contribute to our customers' success in delivering higher performance power systems. Service .... Outstanding technology is only part of the story. A global network of stocking distributors, representatives and applications engineers are in place to support all phases of your product design, evaluation and procurement activities. In a world which demands superior execution, we've won awards as a service leader. Quality .... Our commitment is to excellence in all things we do. Whether you are evaluating the quality of our products, our technical assistance, our customer service or the quality of our internal communications systems, excellence is our standard. We understand that ISO9001, MIL-PRF-19500 and 8D are only the beginning. What's New * * * * * * * * Power MOS V(R) MOSFETs and FREDFETs Thunderbolt IGBTTM .... Capable of replacing MOSFETs up to 150kHz Operation Fast IGBT .... for up to 40kHz Operation Center-Tap FREDs .... 200V - 1000V High Frequency FREDs .... Replacement for GaAs Rectifiers New Packages .... Tape and reel D3 PAK, T-MAXTM and TO-267 RF MOSFETs .... Operation up to 100MHz Expanded Hermetic Product Offering 2 Table of Contents FAST RECOVERY EPITAXIAL DIODES (FREDs) HERMETIC PACKAGED PRODUCTS IGBT NEW GENERATION POWER MOS V(R) MOSFETs & FREDFETs LOW GATE CHARGE POWER MOS IV(R) MOSFETs RF MOSFETS 4-5 14-16 6-11 17-19 12 CUSTOM PRODUCTS 19 13 SALES OFFICES Back Cover Packaging Information Package TO-247 T-MAXTM TO-220 ISOTOP(R) TO-3 TO-264 D3 PAK D3 PAK T/R Quantity Per Tube 30 UNITS 30 UNITS 50 UNITS 10 UNITS 21 UNITS 25 UNITS 30 UNITS 400/REEL Visit APT's Website to Download Datasheets http://www.advancedpower.com 3 IGBT Technology NPT Technology .... Non-Punch-Through IGBTs are manufactured by fabricating the MOSFET structure on the surface of a lightly doped, n-substrate. No epi layer needs to be grown on the substrate. The wafer is thinned to 100m after all high temperature processes are completed to reduce the n-drift region. The pn junction required on the back of the wafer is formed using a p+ implant and a light diffusion. Making the p+ region only a few m thick keeps the voltage drop low in this region and controllable within very tight tolerances throughout the wafer. This construction provides an optimal tradeoff between VCE(SAT), switching speed and ruggedness. At full rated current, the VCE(SAT) may be higher than PT technologies, but under normal operating currents the difference is negligible. Faster Switching .... Faster turn-off speeds and lower tail currents are key advantages of NPT technology. This is primarily due to the generation of fewer minority carriers during operation in NPT devices. n- Substrate Easy Paralleling .... A positive temperature coefficient of VCE(SAT) makes paralleling of NPT IGBTs as easy as with MOSFETs. Tighter Electrical Parameters Distribution.... NPT technology has fewer and more easily controlled processing steps than with PT technologies. The end user can expect less lot-to-lot variation of electrical parameters than is possible with PT devices. Low Leakage Current .... No lifetime control is used in producing NPT IGBTs, eliminating the major cause of leakage current in alternative technologies. NPT Technology vs PT Technology MOS Structure P ASSIV A TION P ASSIV A TION AL SOURCE OXIDE POL Y n+ p MET AL AL SOURCE OXIDE EMITTER POL Y n+ p MET AL DIELECTRIC DIELECTRIC EMITTER p+ n- p+ n- n- epi Layer n++ epi Layer Improved High Temperature Operation .... The turn-off speed and tail current of an NPT IGBT is not as temperature dependent as PT devices. These parameters remain relatively constant over the entire operating temperature range, resulting in approximately 50% less dynamic losses at high temperatures. Improved Ruggedness .... NPT technology IGBTs are avalanche energy, SCSOA and RBSOA rated. p+ Collector p++ Substrate/ Collector Thickness: NPT=100m PT=400m Fast IGBT Family .... Designated by the "GF" in the part number, these devices are designed for operation up to 40kHz in hard switching applications. Thunderbolt IGBTTM Family .... Designated by the "GT" in the part number, these devices are designed for operation up to 150kHz hard switching and 300kHz in resonant applications. 4 NPT IGBT BVCES Volts Max VCE(ON) Volts IC1 (25C) Amps IC2 Amps PD Watts Part Number Package DISCRETE (IGBT ONLY) Fast 1200 3.0 3.2 2.5 2.5 2.5 2.5 2.5 3.2 3.2 2.5 2.5 2.5 2.5 2.5 2.5 2.7 2.5 3.4 2.7 3.4 2.7 22 32 17 25 31 40 58 32 52 25 31 40 58 80 116 75** 90 80 100** 80 ** 100 11 20 8 12 15 20 30 20 33 12 15 20 30 40 60 50 60 50 100 50 100 125 200 70 125 135 175 250 200 300 125 135 175 250 350 500 300 375 390 390 390 390 APT11GF120KR APT20GF120KR APT8GT60KR APT12GT60KR APT15GT60KR APT20GT60KR APT30GT60KR APT20GF120BR APT33GF120BR APT12GT60BR APT15GT60BR APT20GT60BR APT30GT60BR APT40GT60BR APT60GT60BR APT50GF60BR APT60GT60JR APT50GF120B2R APT100GF60B2R APT50GF120LR APT100GF60LR TO-220 Thunderbolt 600 *TO-220[K] TO-220 TO-247 Fast 1200 600 TO-247 Thunderbolt *TO-247[B] 600 600 1200 600 1200 600 Fast ISOTOP(R) T-MAXTM TO-264 TO-264 *TO-264[L] COMBI (IGBT + FRED) Fast 1200 Thunderbolt 3.0 3.2 2.5 2.5 3.2 2.7 3.2 2.7 3.4 3.4 3.4 2.7 2.5 22 32 30 55 52 80 52 80 60 75 100 140 90 11 20 15 30 33 50 33 50 40 50 60 100 60 125 200 125 200 300 300 300 300 390 460 520 390 375 5 APT11GF120BRD APT20GF120BRD TO-247 APT15GT60BRD APT30GT60BRD APT33GF120B2RD APT50GF60B2RD APT33GF120LRD APT50GF60LRD APT40GF120JRD APT50GF120JRD APT60GF120JRD APT100GF60JRD APT60GT60JRD T-Max 600 1200 600 1200 600 1200 T-MAXTM TO-264 *T-MAXTM[B2] E G C E Fast ISOTOP(R) SO 2 T- 27 600 600 *ISOTOP(R)[J] *Not to Scale ** IC1 limited by package Power MOS V(R) MOSFETs A new generation of high power, high voltage Power MOSFETs .... Based on a patented self aligned interdigitated open cell structure, this new generation of MOSFETs offers many advantages over our previous MOS IV(R) generation and over industry standard, closed cell devices. Lower RDS(ON) .... A 25% reduction in on-resistance is gained by employing shallower junctions and "overactive area" bonding to increase the channel packing density per unit of silicon. The packing density has been optimized to minimize the JFET resistance and capacitances. Faster Switching .... Power MOS V(R) utilizes a low resistance aluminum metal gate structure. This allows for faster gate signal propagation than is possible with conventional polysilicon gate structures. Power MOS V(R) employs shorter gate fingers and a more efficient gate bus structure than our previous generation to further reduce the series gate resistance. Multiple bond pads and wires for both source and gate contacts have also reduced impedances. The result is decreased on, rise, delay and fall times. Total switching time has been reduced by up to 60% over our previous generation. Avalanche Energy Rated .... All Power MOS V(R) devices are 100% tested and guaranteed for avalanche energy. Low Leakage Current .... Process improvements have made possible a substantial decrease over our previous generation. Maximum values for most products are now specified at 25A at 25C and 250A at 125C. Rugged Gate .... Improvements in gate oxide processing allow for specification of a high gate rupture voltage. All Power MOS V(R) MOSFETs are specified for 30V continuous operation and 40V transient operation. Lower Cost .... A less complex fabrication process, improved manufacturing yields and reduced cycle times have all contributed to a more cost-effective device. Comparison of Lowest RDS(ON) in TO-247 Package Between New Generation Power MOS V(R) and Previous Generation Power MOS IV(R) Breakdown Voltage (V) 1200 1000 800 600 500 400 300 200 100 New Generation Power MOS V(R) RDS(ON) (m) 1500 860 560 250 150 120 70 38 19 Previous Generation Power MOS IV(R) RDS(ON) (m) --1000 750 300 200 160 85 45 25 Improvement New 14% 25% 17% 25% 25% 18% 16% 24% 6 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 098765432109876543212109876543210987654321098765432121098765430987654321210987654321 2109876543 098765432109876543212109876543210987654321098765432121098765430987876543210987654321 2109654321 0987654321 098765432109876543212109876543210987654321098765432121098765430987876543210987654321 2109654321 098765432109876543212109876543210987654321098765432121098765430987876543210987654321 2109654321 098765432109876543212109876543210987654321098765432121098765432109876543210987654321 2109654321 098765432109876543212109876543210987654321098765432121098765430987876543210987654321 098765432109876543212109876543210987654321098765432121098765430987876543210987654321 2109654321 0987654321 098765432109876543212109876543210987654321098765432121098765430987876543210987654321 2109654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 See page 19 for details. Any devices offered in the TO-264 package can be made available in the T-MAXTM. BVDSS Volts 1000 1200 1000 100 200 500 600 800 100 200 300 400 500 600 800 RDS(ON) Ohms 0.085 0.860 1.000 1.500 1.600 0.022 0.100 0.140 0.150 0.300 0.500 0.025 0.045 0.200 0.280 0.450 0.750 0.019 0.038 0.040 0.070 0.120 0.140 0.160 0.150 0.170 0.200 0.240 0.250 0.300 0.350 0.560 0.650 0.011 ID(Cont.) Amps 100** 40 13 10 47 37 38 27 21 67 59 56 48 37 28 27 23 32 30 26 22 20 25 21 18 15 16 13 12 11 8 100** 75 ** 75 ** PD Watts 300 520 370 370 280 520 520 450 520 520 520 370 300 370 300 300 370 370 300 280 250 370 370 300 280 250 370 300 280 250 370 280 260 280 Ciss(pF) Typ 4100 8600 3700 3700 8500 7400 5600 7500 6600 6600 5100 4300 5100 4050 4050 4890 4500 3600 3350 2650 4400 4400 3700 3600 2650 4300 3750 3450 2600 3700 3050 2700 3050 3050 1300 2500 960 960 960 960 EAS mJ 1300 1300 2500 2500 1600 2500 2500 2500 1500 1500 1300 1300 1300 1300 1300 1300 1210 1300 1300 1300 1210 1300 1300 1210 1300 1210 1210 1210 APT30M85BVR APT10M11B2VR APT10086BVR APT1201R5BVR APT5010B2VR APT5014B2VR APT6015B2VR APT8030B2VR APT10050B2VR APT10M19BVR APT10M25BVR APT20M38BVR APT20M40BVR APT20M45BVR APT30M70BVR APT4012BVR APT4014BVR APT4016BVR APT4020BVR APT5015BVR APT5017BVR APT5020BVR APT5024BVR APT5028BVR APT6025BVR APT6030BVR APT6035BVR APT6045BVR APT8056BVR APT8065BVR APT8075BVR APT1001RBVR APT1201R6BVR APT Part No. APT20M22B2VR ** IDmax limited by package POWER MOS V(R) MOSFETs 7 *T-MAXTM [B2] Package Style *TO-247[B] TO-247 *Not to Scale T-Max POWER MOS V(R) MOSFETs ID(Cont.) Amps 16 21 27 30 38 37 47 57 76 100** 100 ** PD Watts 520 520 520 450 520 450 520 520 520 520 520 Ciss(pF) Typ 6500 6600 6600 5600 7500 5600 7400 7410 8500 8500 8600 EAS mJ 2500 2500 2500 1600 2500 1600 2500 2500 2500 2500 2500 APT Part No. APT12080LVR APT10050LVR APT8030LVR APT6020LVR APT6015LVR APT5014LVR APT5010LVR APT40M70LVR APT30M40LVR APT20M22LVR APT10M11LVR *TO-264[L] TO-264 BVDSS Volts 1200 1000 800 600 500 400 300 200 100 1200 1000 800 600 500 400 300 200 100 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 RDS(ON) Ohms 0.800 0.500 0.300 0.200 0.150 0.140 0.100 0.070 0.040 0.022 0.011 0.800 0.400 0.430 0.250 0.500 0.300 0.280 0.150 0.150 0.130 0.075 0.100 0.085 0.050 0.070 0.035 0.040 0.019 0.022 0.019 0.011 0.011 0.007 Package Style 15 26 19 22 34 25 28 44 35 40 62 44 50 77 53 93 70 130 97 112 175 144 225 450 700 450 500 700 450 500 700 450 500 700 450 500 700 450 700 450 700 450 500 700 450 700 6500 15000 6600 7500 15000 6600 7700 14715 7500 8800 16500 7400 9000 16800 7410 16000 8500 18000 8500 9700 18000 8600 18000 8 2500 3600 2500 1300 3600 2500 1300 3600 2500 1300 3600 2500 1300 3600 2500 3600 2500 3600 2500 1300 3600 2500 3600 APT12080JVR APT12040JVR APT10050JVR APT10043JVR APT10025JVR APT8030JVR APT8028JVR APT8015JVR APT6015JVR APT6013JVR APT60M75JVR APT5010JVR APT50M85JVR APT50M50JVR APT40M70JVR APT40M35JVR APT30M40JVR APT30M19JVR APT20M22JVR APT20M19JVR APT20M11JVR APT10M11JVR APT10M07JVR *Not to Scale *ISOTOP(R)[J] (ISOLATED BASE) S G D S SO 2 T- 27 098765432 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 9876543210987654321210987654321098765432109876543212109876543098787654321098765432 0987654321 98765432109876543212109876543210987654321098765432121098765432109876543210987654321 2109654321 98765432109876543212109876543210987654321098765432121098765430987876543210987654321 2109654321 98765432109876543212109876543210987654321098765432121098765432109876543210987654321 2109654321 0987654321 98765432109876543212109876543210987654321098765432121098765430987876543210987654321 1 98765432109876543212109876543210987654321098765432121098765430987876543210987654321 2109654321 0987654321 98765432109876543212109876543210987654321098765432121098765430987876543210987654321 2109654321 1 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 Any devices offered in the TO-247 package can be made available in D3 PAK. See page 19 for details. BVDSS Volts 1000 100 200 500 600 800 RDS(ON) Ohms 0.019 0.025 0.038 0.045 0.170 0.200 0.280 0.350 0.450 0.650 1.000 0.860 ID(Cont.) Amps 75 ** 75 ** 67 56 30 26 20 18 15 13 13 11 PD Watts 370 300 370 300 370 300 250 280 250 280 370 280 Ciss(pF) Typ 5100 4150 5100 4050 4400 3700 2650 3450 2600 3050 3700 3050 EAS mJ 1500 1500 1300 1300 1300 1300 1210 1210 1300 1210 960 960 APT10M19SVR APT10M25SVR APT20M38SVR APT20M45SVR APT5017SVR APT5020SVR APT5028SVR APT6035SVR APT6045SVR APT8065SVR APT10086SVR APT1001RSVR APT Part No. ** IDmax limited by package MOTOR DRIVE "BUCK" CONFIGURATION 500 500 "BOOST" CONFIGURATION 0.100 0.100 44 44 450 450 7410 7410 POWER FACTOR CORRECTION "BOOST" CONFIGURATION * Reduced parts count vs discretes. * Improved circuit performance due to reduced inductance. POWER MOS V(R) MOSFETs POWER MOS V(R) MOSFET/FRED "COMBI" PRODUCTS "BUCK" CONFIGURATION 9 2500 2500 APT5010JVRU3 APT5010JVRU2 2 *ISOTOP(R)[J] (ISOLATED BASE) *Not to Scale Package Style *D3 PAK[S] 3 D3PAK 1 4 S OT 22 7 Additional MOS V(R) Products Preliminary Information MOSFETs BVDSS Volts 600 500 500 200 100 600 500 500 200 100 RDS(ON) ID (Cont) Ohms Amps 0.110 0.085 0.080 0.018 0.009 0.100 0.085 0.080 0.018 0.009 49 56 58 100** 100** 49 56 58 100** 100** PD Ciss(pF) Watts Typ 625 625 625 625 625 625 625 625 625 625 4100 6700 6700 7600 7600 4100 6700 6700 7600 7600 EAS mJ 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 APT Part Number APT6011B2VR APT50M85B2VR APT50M80B2VR APT20M18B2VR APT10M09B2VR APT6011LVR APT50M85LVR APT50M80LVR APT20M18LVR APT10M09LVR Samples Available Sept 99 Aug 99 Aug 99 Sept 99 Sept 99 Sept 99 Aug 99 Aug 99 Sept 99 Sept 99 Package Style T-MAXTM TO-264 FREDFETs BVDSS Volts 800 600 600 500 500 200 100 600 500 200 100 RDS(ON) Ohm 0.750 0.250 0.110 0.085 0.080 0.018 0.009 0.110 0.085 0.018 0.009 ID (Cont) Amps 12 25 49 56 58 ** 100 ** 100 49 56 ** 100 ** 100 Ciss PD (pF) Watts Typ 260 370 625 625 625 625 625 625 625 625 625 2700 4300 4100 6700 6700 7600 7600 4100 6700 7600 7600 trr (nS) Max 250 250 250 250 250 220 220 250 250 220 220 EAS mJ 960 1300 3000 3000 3000 3000 3000 3000 3000 3000 3000 APT Part Number APT8075BVFR APT6025BVFR APT6011B2VFR APT50M85B2VFR APT50M80B2VFR APT20M18B2VFR APT10M09B2VFR APT6011LVFR APT50M85LVFR APT20M18LVFR APT10M09LVFR Samples Package Available Style July 99 Now Sept 99 Aug 99 Aug 99 Sept 99 Sept 99 Sept 99 Aug 99 Sept 99 Sept 99 TO-247 T-MAXTM TO-264 **ID(Cont) limited by package TO-247 T-Max TO-264 TO-247[B] T-MAXTM [B2] 10 TO-264[L] MOS V(R) FREDFETs FREDFET Technology .... Using a proprietary platinum lifetime control process, the performance of the intrinsic body drain diode of the Power MOS V(R) MOSFET is improved. Faster Intrinsic Diode Recovery .... The reverse recovery time has been reduced to 250ns maximum, eliminating the external FRED and Schottky rectifiers in certain circuit configurations. Improved Ruggedness .... The ruggedness of the intrinsic diode has also been improved, allowing for a commutative dv/dt rating of 5V/ns. Other Benefits .... The platinum process provides the added advantages of soft recovery, lower leakage current, lower recovery charge and more temperature independent performance than alternative processes used to improve intrinsic diode performance. Applications for FREDFETs .... Power MOS V(R) FREDFETs should be specified under the following conditions: * Whenever the intrinsic body drain diode of the MOSFET is expected to carry forward current. Examples are Half Bridge, H-Bridge and 3-Phase Bridge circuit topologies. * In soft switched circuits, where the body diode carries current. Examples are Phase Shift Controlled H-Bridge or Resonant circuit topologies. v MOSFET vs FREDFET Intrinsic Diode trr FREDFET MOSFET POWER MOS V(R) FREDFETs 098765432109876543212109876543210987654321098765432121098765432109876543210987654321 1 098765432109876543212109876543210987654321098765432121098765432109876543210987654321 098765432109876543212109876543210987654321098765432121098765432109876543210987654321 098765432109876543212109876543210987654321098765432121098765432109876543210987654321 098765432109876543212109876543210987654321098765432121098765432109876543210987654321 9876543210987654321210987654321098765432109876543212109876543210987654321098765432 098765432109876543212109876543210987654321098765432121098765432109876543210987654321 0 Any devices offered in standard MOSFETs can be made available as FREDFETs . See page 19 for details. 1000 800 500 1.100 0.860 0.650 0.560 0.240 0.200 0.170 0.085 0.070 0.045 0.038 0.025 0.019 11 13 13 16 22 26 30 40 48 56 67 75 ** 75** 280 370 280 370 280 300 370 300 370 300 370 300 370 3050 3700 3050 3700 3600 3700 4400 4100 4890 4050 5100 4300 5100 11 1210 1300 1210 1300 1210 1300 1300 1300 1300 1300 1300 1500 1500 200 200 200 200 250 250 250 200 225 200 240 200 200 300 200 100 APT1001R1BVFR APT10086BVFR APT8065BVFR APT8056BVFR APT5024BVFR APT5020BVFR APT5017BVFR APT30M85BVFR APT30M70BVFR APT20M45BVFR APT20M38BVFR APT10M25BVFR APT10M19BVFR BVDSS Volts RDS(ON) Ohms ID(Cont.) Amps PD Watts Ciss(pF) Typ EAS mJ trr(nsecs) Max APT Part No. Package Style TO-247 *TO-247[B] *Not to Scale 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 098765432 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 098765432109876543212109876543210987654321098765432121098765432109876543210987654321 0987654321 098765432109876543212109876543210987654321098765432121098765432109876543210987654321 098765432109876543212109876543210987654321098765432121098765432109876543210987654321 0987654321 098765432109876543212109876543210987654321098765432121098765432109876543210987654321 098765432109876543212109876543210987654321098765432121098765432109876543210987654321 0987654321 098765432109876543212109876543210987654321098765432121098765432109876543210987654321 098765432109876543212109876543210987654321098765432121098765432109876543210987654321 0987654321 098765432109876543212109876543210987654321098765432121098765432109876543210987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 109876543210987654321210987654321098765432109876543212109876543209876543221098765432 0987654321 1098765432109876543212109876543210987654321098765432121098765432109876543210987654321 1098765431 1098765432109876543212109876543210987654321098765432121098765432109876543210987654321 1098765431 0987654321 1098765432109876543212109876543210987654321098765432121098765432098765432210987654321 1098765432109876543212109876543210987654321098765432121098765432109876543210987654321 1098765431 0987654321 1098765432109876543212109876543210987654321098765432121098765432098765432210987654321 1 1098765432109876543212109876543210987654321098765432121098765432098765432210987654321 1098765431 0987654321 1098765432109876543212109876543210987654321098765432121098765432098765432210987654321 1098765431 1 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 Any devices offered in the TO-264 package can also be made available in T-MaxTM. See page 19 for details. Any devices offered in the TO-247 package can also be made available in D3 PAK See page 19 for details. BVDSS Volts 1000 1000 200 300 500 800 200 300 500 800 200 500 200 500 800 RDS(ON) Ohms 0.022 0.011 0.040 0.019 0.100 0.085 0.050 0.300 0.150 0.022 0.040 0.100 0.300 0.045 0.200 0.022 0.100 0.300 0.500 0.250 0.500 ID(Cont.) Amps 97 175 44 50 77 25 44 19 34 76 47 27 21 56 26 47 27 70 130 100 100 ** ** PD Watts 450 700 450 700 450 500 700 450 700 450 700 520 520 520 520 520 300 300 520 520 520 Ciss(pF) Typ 8500 18000 8500 8500 7400 6600 6600 4050 3700 8500 7400 6600 8500 18000 7400 9000 16300 6600 14715 6600 15000 2500 3600 2500 3600 2500 1300 3600 2500 3600 2500 3600 2500 2500 2500 2500 2500 1300 1300 2500 2500 2500 EAS mJ trr(nsecs) Max 220 250 240 300 250 300 300 300 280 300 300 220 240 250 300 300 200 250 220 250 300 APT Part No. APT20M22JVFR APT20M11JVFR APT30M40JVFR APT30M19JVFR APT5010JVFR APT50M85JVFR APT50M50JVFR APT8030JVFR APT8015JVFR APT10050JVFR APT10025JVFR APT5010LVFR APT8030LVFR APT10050LVFR APT5020SVFR APT5010B2VFR APT8030B2VFR APT20M22LVFR APT30M40LVFR APT20M45SVFR APT20M22B2VFR ** IDmax limited by package POWER MOS V(R) FREDFETs 12 *ISOTOP(R)[J] (ISOLATED BASE) G Package Style *T-MAXTM[B2] *Not to Scale *TO-264[L] *D3 PAK[S] S D3PAK TO-264 T-Max D S S OT 22 7 POWER MOS IV(R) MOSFETs LOW GATE CHARGE - FAST SWITCHING FAMILY BVDSS Volts 1000 RDS(ON) Ohms 1.000 1.100 1.600 2.000 4.000 800 600 0.750 0.300 0.350 0.400 500 0.200 0.250 400 0.160 0.200 ID(Cont.) Amps 11.0 10.5 8.0 7.0 4.4 13.0 23.0 19.0 18.0 28.0 23.0 31.0 26.0 PD Watts 310 310 240 240 180 310 360 310 310 360 310 360 310 Ciss(pF) Typ 2460 2460 1530 1530 805 2410 2905 2400 2400 2890 2380 2850 2380 Qg(nC) Typ 90 90 66 66 35 88 140 87 87 140 83 130 94 APT Part No. APT1001RBN APT1001R1BN APT1001R6BN APT1002RBN APT1004RBN APT8075BN APT6030BN APT6035BN APT6040BN APT5020BN APT5025BN APT4016BN APT4020BN *TO-247[B] TO-247 Package Style 1000 0.500 0.260 20.5 33.0 27.0 40.0 38.0 57.0 48.0 71.0 56.0 86.0 520 690 520 690 520 690 520 690 520 690 5425 11610 5780 11715 5540 11670 5570 11640 5630 11140 235 465 245 468 242 446 240 475 241 507 APT10050JN APT10026JN APT8030JN APT8018JN G S D S 800 0.300 0.180 600 0.150 0.090 APT6015JN APT60M90JN APT5010JN APT50M60JN APT40M75JN APT40M42JN S OT 22 7 500 0.100 0.060 *ISOTOP(R)[J] (ISOLATED BASE) 400 0.075 0.042 1000 4.000 3.6 125 805 35 APT1004RKN TO-220 800 2.400 4.7 125 790 38 APT802R4KN *TO-220[K] 13 *Not to Scale RF MOSFETs RF Technology.... APT RF MOSFETs are optimized for high power Class C, D and E operation from 1100 MHz. The die geometry has been designed for RF high power efficiency and low gate loss. The RF MOSFETs are mounted on an isolation substrate to create a TO-247 common source configuration. The source is directly connected to the center pin and heatsink tab; no external insulator is necessary. This provides maximum thermal efficiency without the added expense and assembly problems of drain isolation. Internally, symmetric wire bonding schemes insure that both pinout versions of each device are perfect mirror image pairs. This configuration allows for easy layout of push-pull and parallel pairs for circuit board symmetry and separation of input and output sections. High Voltage Operation .... Historically, all RF MOSFETs operated at a maximum of 50V. By combining high voltage MOSFET technology with specific RF die geometries, this limitation has been removed. RF operation at up to 300V is now possible. Why Higher Voltage .... Higher operating voltage means higher load impedances. For 300W of RF output at 50V, the load is less than 4 ohms. At 125V, the load impedance is 25 ohms. The higher impedance allows for fewer transformers and combiners. Parallel devices can still operate into a reasonable and convenient load impedance. Increasing the operating voltage also lowers the current required for any given power output, reducing the size and weight of other components. Lower Cost .... * Inexpensive TO-247 plastic package * No insulators required * Maximum thermal efficiency. The internal BeO insulator is more efficient than external insulators. * Simplified board layout due to symmetric pairs configuration Note: The ARF446 through ARF449 devices are based on the latest MOS V(R) RF technology and are the preferred devices for all new designs. The ARF440 through ARF445 are based on Power MOS IV(R) technology and are not recommended for new designs. RF MOSFETS - SYMMETRIC PAIRS VDD Volts 50 POUT Watts 125 125 200 200 300 300 250 250 250 250 150 150 500 GPS dB(typ) 21 @ 13.56 MHz 21 @ 13.56 MHz 22 @ 13.56 MHz 22 @ 13.56 MHz 18.7 @ 13.56 MHz 18.7 @ 13.56 MHz 15 @ 40.68 MHz 15 @ 40.68 MHz 15 @ 40.68 MHz 15 @ 40.68 MHz 13 @ 81.36 MHz 13 @ 81.36 MHz 13 @ 81.36 MHz C/W 0.75 0.75 0.75 0.75 0.60 0.60 0.55 0.55 0.55 0.55 0.76 0.76 0.35 14 RJC Pin Out Figure 1 Figure 2 Figure 1 Figure 2 Figure 1 Figure 2 Figure 1 Figure 2 Figure 1 Figure 2 Figure 1 Figure 2 APT Part No. ARF440 ARF441 ARF442 ARF443 ARF444 ARF445 ARF446 ARF447 ARF448A ARF448B ARF449A ARF449B ARF450 Figure 1 TO-247 100 300 Gate Source Drain Figure 2 250 TO-247 150 150 Drain Source Gate 150 *TO-247 COMMON SOURCE *Not to Scale FRED Technology FRED Technology .... Our proprietary platinum lifetime control process results in performance advantages vs FREDs built with alternative processes for lifetime control. Use of platinum produces a "softer" and faster recovery with an optimal trade-off between VF and trr. Improved High Temperature Operation .... The reverse recovery of silicon diodes degrades as operating temperatures increase. The advantage of using platinum for lifetime control is less degradation of performance at high temperatures. To assist the designer, trr is specified on all datasheets under operating conditions; i.e., at Tj = 125C, maximum rated current and dI/dt and 80% rated voltage. CENTER-TAP DUAL FREDS VRMM Volts 1000 IF(AV) Amps** 15 30 15 30 15 30 30 60 60 60 60 trr2(25C) nsec Typ 60 60 40 50 40 45 40 70 70 70 36 trr3(100C) VF(25C) nsec Typ Volts 120 120 80 80 70 70 60 130 90 90 71 2.3 2.3 1.8 1.8 1.5 1.5 1.15 2.5 1.8 1.5 1.15 IRM(25C) A APT Part No. APT15D100BCT APT30D100BCT APT15D60BCT APT30D60BCT APT15D40BCT APT30D40BCT APT30D20BCT APT60D100LCT 1 Package Style 250 250 150 250 150 250 250 250 250 250 250 TO -24 7 600 400 2 3 200 1000 600 400 200 *TO-247[BCT] Common Cathode TO APT60D60LCT APT60D40LCT APT60D20LCT -26 4 *TO-264[LCT] Common Cathode TO -24 TO 7 CONSULT FACTORY FOR THESE OR OTHER PACKAGE CONFIGURATIONS -24 7 1 1 2 3 Common Anode **All Ratings Are Per Leg 15 Half Bridge 3or Phase Leg *Not to Scale 2 DISCRETE FREDS VRMM Volts 1200 1000 600 IF(AV) Amps 30 60 30 60 15 30 60 30 60 30 60 15 15 15 15 30 60 100 30 60 100 30 60 100 30 60 100 60 30 60 100 30 60 100 30 60 100 30 60 100 60 100 trr2(25C) nsec Typ 70 70 60 70 40 50 70 45 40 40 36 60 40 40 35 70 70 130 60 70 80 50 70 60 45 70 60 36 70 70 130 60 70 80 50 70 60 45 70 60 36 70 trr3(100C) VF(25C) nsec Typ Volts 160 130 120 130 80 80 90 70 65 60 71 120 80 70 60 160 130 215 120 130 160 80 90 92 70 90 140 71 160 130 215 120 130 160 80 90 92 70 90 140 71 150 2.5 2.5 2.3 2.5 1.8 1.8 1.8 1.5 1.5 1.15 1.15 2.3 1.8 1.5 1.4 2.5 2.5 2.5 2.3 2.5 2.5 1.8 1.8 2.0 1.5 1.5 1.5 1.15 2.5 2.5 25 2.3 2.5 2.5 1.8 1.8 2.0 1.5 1.5 1.5 1.15 1.1 16 IRM(25C) A APT Part No. APT30D120B APT60D120B APT30D100B APT60D100B APT15D60B APT30D60B APT60D60B APT30D40B APT60D40B APT30D20B APT60D20B APT15D100K Package Style 400 200 1000 600 400 300 1200 250 250 250 250 150 250 250 250 250 250 250 250 150 150 150 250 250 250 250 250 250 250 250 250 250 250 500 250 250 250 250 250 250 250 250 250 250 250 250 500 250 500 TO-247 *TO-247[B] TO -22 0 APT15D60K APT15D40K APT15D30K APT2X30D120J APT2X60D120J APT2X100D120J A 1 *TO-220[K] K 2 A 2 K2 A2 1000 600 400 200 1200 APT2X30D100J K1 APT2X60D100J APT2X100D100J APT2X30D60J *ISOTOP(R)[J] APT2X60D60J Antiparallel Configuration APT2X100D60J (ISOLATED BASE) APT2X30D40J APT2X60D40J APT2X100D40J APT2X60D20J APT2X31D120J APT2X61D120J APT2X101D120J APT2X31D100J APT2X61D100J APT2X101D100J APT2X31D60J APT2X61D60J APT2X101D60J APT2X31D40J APT2X61D40J APT2X101D40J APT2X61D20J APT2X101D20J 7 el 1 22 ll K T- ara SO -P i nt A1 A K A 2 2 K 1 1 K2 K1 1000 27 l -2 le A OT ral Sa P A2 A1 600 400 *ISOTOP(R)[J] Parallel Configuration (ISOLATED BASE) 200 *Not to Scale DISCRETE SURFACE MOUNT FREDS VRMM Volts IF(AV) Amps trr2(25C) nsec Typ trr3(100C) nsec Typ VF(25C) Volts IRM(25C) A APT Part No. Package Style 600 400 200 30 30 30 50 45 40 80 70 60 1.8 1.5 1.15 250 250 250 APT30D60S D3PAK APT30D40S APT30D20S *D3 PAK[S] Higher Frequency FREDs Standard FRED[1] vs Higher Frequency FRED[2] Extremely Fast Recovery .... These FREDs are capable of replacing GaAs rectifiers in high frequency applications up to 2 MHz, at a fraction of the cost. By using two (2), much heavier platinum doped 300V FREDs in series, a considerable decrease in the reverse recovery time is achieved vs standard 600V FREDs. This heavier concentration of platinum produces a FRED that is specifically designed for higher frequency applications where reduction of switching losses is most important and a higher VF specification can be tolerated. [2] [1] ULTRAFAST SOFT RECOVERY DIODE PRODUCTS HIGHER FREQUENCY FREDS VRMM Volts IF(AV) Amps trr2(25C) nsec Typ trr3(100C) VF(25C) nsec Typ Volts IRM(25C) A APT Part No. Package Style 600 30 15 20 12.5 35 25 4.0 4.0 250 150 APT30DS60B APT15DS60B TO -24 7 1 2 *TO-247[B] 17 *Not to Scale HERMETIC MOSFET PRODUCTS BVDSS Volts RDS(ON) Ohms ID(Cont.) Amps PD Watts Ciss(pF) Typ Qg(nC) Typ APT Part No. Alternate Package Package Style 1000 4.000 3.3 100 805 35 APT1004RGN SMD1 *TO-257[G] (ISOLATED) 1000 2.000 4.000 600 500 0.450 0.320 0.400 0.415 400 0.300 0.315 5.5 3.6 11.8 14.0 13.0 12.0 15.0 14.0 150 125 150 150 150 150 150 150 1530 805 2600 2650 1430 2410 1500 2400 66 35 115 110 71 103 71 100 APT1002RCN APT1004RCN APT6045CVR APT5032CVR APT5040CNR 2N7228/JX/JV APT4030CNR 2N7227/JX/JV SMD2 SMD2 SMD1 SMD2 SMD2 SMD2 *TO-254[C] (ISOLATED) 1000 0.88 1.10 11.0 9.0 13.5 11.5 20.0 15.5 24.0 18.5 28.0 22.0 45.0 250 200 250 200 250 200 250 200 250 200 250 3700 3050 3700 3050 4300 3450 4400 3600 4500 3350 5100 185 150 185 150 185 140 200 140 195 135 148 APT10088HVR APT1001R1HVR APT8058HVR APT8067HVR APT6027HVR APT6037HVR APT5019HVR APT5026HVR APT4014HVR APT4018HVR APT20M40HVR SMD3 SMD2 SMD3 SMD2 SMD3 SMD2 SMD3 SMD2 SMD3 SMD2 SMD3 *TO-258[H] (ISOLATED) 800 0.58 0.67 600 0.27 0.37 500 0.19 0.26 400 0.14 0.18 200 0.040 CONSULT FACTORY FOR INFORMATION ON FRED, FREDFET AND IGBTS IN ANY HERMETIC PACKAGE. 18 *Not to Scale HERMETIC MOSFET PRODUCTS BVDSS Volts 1000 800 600 RDS(ON) Ohms 1.10 0.65 0.32 0.35 500 0.22 0.24 0.30 400 300 0.15 0.090 ID(Cont.) Amps 9.0 11.5 17.5 16.0 21.0 18.5 14.7 25.5 33.0 PD Watts 200 200 235 200 235 200 155 235 235 Ciss(pF) Typ 3050 3050 3750 3450 3700 3600 2650 3600 4100 Qg(nC) Typ 150 150 160 140 150 140 110 160 130 APT Part No. APT1001R1AVR APT8065AVR APT6032AVR APT6035AVR APT5022AVR APT5024AVR APT5030AVR APT4015AVR APT30M90AVR Alternate Package SMD2 SMD2 SMD3 SMD2 SMD3 SMD2 SMD2 SMD3 SMD3 *TO-3[A] (NON-ISOLATED) Package Style 1000 600 500 400 200 0.57 0.17 0.12 0.082 0.026 17.3 31.5 40.0 44.0 65.0** 450 450 450 450 450 6600 7500 7400 7410 8500 335 315 312 330 290 APT10057WVR APT6017WVR APT5012WVR APT40M82WVR APT20M26WVR SMD4 SMD4 SMD4 SMD4 SMD4 *TO-267[W] (ISOLATED) 1000 600 500 400 200 0.250 0.075 0.05 0.035 0.013 33.0 60.5 74.5 89.0 146.0 625 625 625 625 625 15000 16500 16300 16000 18000 660 700 690 700 630 APT10025PVR APT60M75PVR APT50M50PVR APT40M35PVR APT20M13PVR *P-PACK (ISOLATED) CONSULT FACTORY FOR INFORMATION ON FRED, FREDFET AND IGBTS IN ANY HERMETIC PACKAGE. *SMD1 *SMD2 *SMD3 *SMD4 CONSULT FACTORY FOR INFORMATION ON SURFACE MOUNT PRODUCTS ** IDmax limited by package 19 *Not to Scale Hermetic Products APT is a MIL-PRF-19500 certified supplier and can provide TX, TXV and space level processing. In addition to the MOSFETs shown in this catalog, other MOSFETs, FREDFETs, IGBTs, FREDs, or combinations of these products can be provided in hermetic packages. If you do not see the product you need, or if you have questions concerning processing capabilities or certification levels, please contact your local representative or APT directly. Custom, Value-Added Solutions To Meet Your Specific Power Application Requirements In addition to the broad line of leading edge products in this catalog, APT is dedicated to providing innovative solutions for our customers. This means working with our customers to solve their procurement, manufacturing or application problems. We are known as the supplier that provides solutions that others cannot, or will not, provide. These include, but are not limited to: * * * * * * * Custom products including special designs, processes, and packaging. Supply chain management requirements. Strategic inventories to allow for unexpected changes in demand. Special testing. Thermal and power management. Hi-Rel Testing/Screening Application Specific Power Modules (ASPM) where power semiconductors are combined with driver and protection circuits to meet your specific application requirements. For additional information contact your local APT Representative or APT directly. 20 APT USA 405 S. W. COLUMBIA STREET BEND, OR 97702 U.S.A. TEL: (541) 382-8028 or 1-800-522-0809 FAX: (541) 388-0364 http://www.advancedpower.com E-mail: custserv@advancedpower.com APT EUROPE PARC CADERA NORD - AV KENNEDY BAT B4 33700 MERIGNAC - FRANCE TEL: (33) (0)5 57 92 15 15 FAX: (33) (0)5 56 47 97 61 SALES OFFICES EASTERN USA TEL: (978) 686-5352 FAX: (978) 686-5441 E-mail: rsmeast@advancedpower.com EUROPE TEL: 33-557 92 15 15 FAX: 33-556 47 97 61 E-mail: rsmeurope@advancedpower.com ASIA, SOUTH AMERICA, AUSTRALIA TEL: (541) 382-8028 FAX: (541) 388-0364 E-Mail: rsmrow@advancedpower.com WESTERN USA TEL: (541) 382-8028 FAX: (541) 388-0364 E-Mail: rsmwest@advancedpower.com is a registered trademark of Advanced Power Technology, Inc. (c) 1998 ISOTOP(R) is a registered trademark of SGS Thomson 055-0007 REV H 21 APT reserves the right to change, without notice, the specifications and information contained herein. |
Price & Availability of 1999SHORTFORMCAT
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