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PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFH 24N80P IXFK 24N80P IXFT 24N80P
VDSS = 800 V ID25 = 24 A RDS(on) 400 m trr 250 ns
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C
Maximum Ratings 800 800 30 40 24 55 12 50 1.5 10 650 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J
TO-247 (IXFH)
G
D
S
D (TAB)
TO-268 (IXFT) Case Style
G
V/ns W C C C
S
D (TAB)
TO-264 AA (IXFK)
Mounting torque (TO-247 & TO-264) TO-247 TO-268 TO-264 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s
1.13/10 Nm/lb.in. 6 5 10 300 260 g g g C C
G D S
(TAB)
TL TSOLD
G = Gate S = Source Features
D = Drain Tab = Drain
Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 4 mA VGS = 30 V, VDS = 0 V VDS = VDSS VGS = 0 V TJ = 125C
Characteristic Values Min. Typ. Max. 800 3.0 5.0 100 25 1000 400 V V nA A A m
International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Advantages Easy to mount Space savings High power density DS99572E(07/06)
VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 %
(c) 2006 IXYS All rights reserved
IXFH 24N80P IXFK 24N80P IXFT 24N80P
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 15 25 7200 VGS = 0 V, VDS = 25 V, f = 1 MHz 470 26 32 VGS = 10 V, VDS = 0.5 ID25 RG =2 (External) 27 75 24 105 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 30 33 S pF pF pF ns ns ns ns nC nC nC 0.19 C/W TO-247 TO-264 0.21 0.15 C/W C/W
Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
1 2 3
TO-247 AD (IXFH) Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS RthCS
VDS = 20 V; ID = 0.5 ID25, pulse test
Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions VGS = 0 V Repetitive
Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 24 55 1.5 250 0.8 6.0 A A V ns C A
TO-264 (IXFK) Outline
IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25A, -di/dt = 100 A/s VR = 100V
TO-268 (IXFT)Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734 B2 6,759,692 6,771,478 B2
IXFH 24N80P IXFK 24N80P IXFT 24N80P
Fig. 1. Output Characteristics @ 25C
24 22 20 18 6V VGS = 10V 55 50 45 40 6V VGS = 10V 7V
Fig. 2. Extended Output Characteristics @ 25C
ID - Amperes
ID - Amperes
5V
16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 9
35 30 25 20 15 10 5 0 0 3 6 9 12 15 18 21 24 27 30 5V
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ 125C
24 22 20 VGS = 10V 6V 3.1 2.8 2.5
Fig. 4. RDS(on) Normalized to ID = 12A Value vs. Junction Temperature
VGS = 10V
RDS(on) - Normalized
18
ID - Amperes
16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12
5V
2.2 1.9 1.6 1.3 1 0.7 0.4 I D = 24A I D = 12A
14
16
18
20
-50
-25
0
25
50
75
100
125
150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 12A Value vs. Drain Current
3 2.8 2.6 VGS = 10V TJ = 125C 26 24 22 20 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 5 10 15 20 25 30 35 40 45 50 55 TJ = 25C 18
Fig. 6. Maximum Drain Current vs. Case Temperature
RDS(on) - Normalized
ID - Amperes
16 14 12 10 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150
I D - Amperes
TC - Degrees Centigrade
(c) 2006 IXYS All rights reserved
IXFH 24N80P IXFK 24N80P IXFT 24N80P
Fig. 7. Input Admittance
40 36 32 65 60 55 50
Fig. 8. Transconductance
g f s - Siemens
28
45 40 35 30 25 20 15 10 TJ = - 40C 25C 125C
ID - Amperes
24 20 16 12 8 4 0 3 3.5 4 4.5 5 5.5 6 TJ = 125C 25C - 40C
5 0 0 5 10 15 20 25 30 35 40 45 50
VGS - Volts
I D - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
36 32 28 10 9 8 7 VDS = 400V I D = 12A I G = 10mA
Fig. 10. Gate Charge
IS - Amperes
24
VGS - Volts
TJ = 25C 0.7 0.8 0.9 1
6 5 4 3 2 1 0
20 16 12 8 4 0 0.3 0.4 0.5 0.6 TJ = 125C
0
10
20
30
40
50
60
70
80
90
100
110
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
10,000 Ciss 1.00
Fig. 12. Maximum Transient Thermal Resistance
Capacitance - PicoFarads
R(th)JC - C / W
30 35 40
1,000
C oss
0.10
100
f = 1 MHz 10 0 5 10 15 20
C rss 25 0.01 0.0001 0.001 0.01 0.1 1 10
VDS - Volts
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions. F_24N80P (8J) 6-22-06.xls

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