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HiPerFASTTM IGBT
C2-Class High Speed IGBTs
IXGH 40N60C2 IXGT 40N60C2
VCES IC25 VCE(sat) tfi typ
= 600 V = 75 A = 2.7 V = 32 ns
TO-268 (IXGT) Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Plastic body Md Weight Mounting torque (M3) TO-247 TO-268 Test Conditions Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C (limited by leads) TC = 110C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 10 Clamped inductive load @ 600 V TC = 25C Maximum Ratings 600 600 20 30 75 40 200 ICM = 80 300 -55 ... +150 150 -55 ... +150 300 200 V V V V A A A A W C C C C C Features Very high frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity Applications PFC circuits Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Advantages High power density Very fast switching speeds for high frequency applications
G = Gate, E = Emitter, G C E C = Collector, TAB = Collector C (TAB) G E C (TAB)
TO-247 (IXGH)
1.13/10Nm/lb.in. 6 4 g g
Symbol
Characteristic Values (TJ = 25C unless otherwise specified) min. typ. max. 3.0 TJ = 25C TJ = 150C 5.0 50 1 100 TJ = 25C TJ = 150C 2.2 2.0 2.7 V A mA nA V V
VGE(th) ICES IGES VCE(sat)
IC
= 250 A, VCE = VGE
VCE = VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = 30 A, VGE = 15 V
(c) 2005 IXYS All rights reserved
DS99042C(10/05)
IXGH 40N60C2 IXGT 40N60C2
Symbol Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) min. typ. max. 20 36 2500 VCE = 25 V, VGE = 0 V, f = 1 MHz 180 54 95 IC = 30 A, VGE = 15 V, VCE = 300 V 14 36 18 Inductive load, TJ = 25C IC = 30 A, VGE = 15 V VCE = 400 V, RG = Roff = 3 20 90 32 0.20 18 Inductive load, TJ = 125C IC = 30 A, VGE = 15 V VCE = 400 V, RG = Roff = 3 20 0.3 130 80 0.50 240 140 S
P
TO-247 AD Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = 30 A; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 %
pF pF pF nC nC nC ns ns ns ns 0.37 mJ ns ns mJ ns ns mJ 0.42 K/W TO-268 Outline
e
Dim.
Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
(TO-247)
0.25
K/W
Min. Recommended Footprint (Dimensions in inches and mm)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2
IXGH 40N60C2 IXGT 40N60C2
Fig. 1. Output Characteristics @ 25 Deg. C
60 50 40 VGE = 15V 13V 11V 9V 1 80 1 50 21 0
Fig. 2. Extended Output Characteristics @ 25 deg. C
VG E = 15V 13V 11V 9V
I C - Amperes
7V
30 20 1 0
I C - Amperes
1 20 90 60 30
7V
5V
0 0.5 1 1 .5 2 2.5 3 3.5
5V
0
0
1
2
3
4
5
6
7
V C E - Volts
V C E - Volts
Fig. 3. Output Characteristics @ 125 Deg. C
60 50 40 30 20 1 0 0 0.5 1 1 .5 2 2.5 3 VG E = 15V 13V 11V 9V 1 .2 1 .3
Fig. 4. T emperature Dependence of V CE(sat)
I C = 60A VG E = 15V
VC E (sat) - Normalized
1 .1 1 0.9 0.8 0.7 0.6 25
I C - Amperes
7V
I C = 30A
5V
I C = 15A
50
75
1 00
1 25
1 50
V CE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter voltage
4 T J = 25 C 3.5 21 0 1 80 1 50 1 20 90 60 30 0 5 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5 4
Fig. 6. Input Admittance
2.5
I C = 60A
2 30A 1 .5 15A 1
I C - Amperes
VC E - Volts
3
T J = 125 C 25 C -40 C
5
6
7
8
9
1 0
V G E - Volts
V G E - Volts
(c) 2005 IXYS All rights reserved
IXGH 40N60C2 IXGT 40N60C2
Fig. 7. Transconductance
70 60 50 40 30 20 1 0 0 0 30 60 90 1 20 1 50 1 80 T J = -40 C 25 C 125 C
Fig. 8. Dependence of Eoff on RG
1 .8 1 .6 1 .4 TJ = 125 C VGE = 15V VC E = 400V I C = 60A
E off - milliJoules
g f s - Siemens
1 .2 1 0.8 0.6 0.4 0.2 0 2
I C = 45A
I C = 30A
I C = 15A 4 6 8 1 0 1 2 1 4 1 6
I C - Amperes
R G - Ohms
Fig. 9. Dependence of Eoff on IC
1 .6 1 .4 R G = 3 Ohms R G= 10 Ohms - - - - VG E = 15V VC E = 400V 1 .6 1 .4 1 .2
Fig. 10. Dependence of Eoff on T emperature
R G = 3 Ohms R G = 10 Ohms - - - - VG E = 15V VC E = 400V
I C = 60A
E off - MilliJoules
1 .2 1 0.8
E off - milliJoules
1 0.8 0.6 0.4 I C = 30A I C = 15A 0 I C = 45A
T J = 125C 0.6 0.4 0.2 0 1 0 20 30 40 50 60 T J = 25C
0.2
25
50
75
1 00
1 25
I C - Amperes
TJ - Degrees Centigrade
Fig. 11. Gate Charge
1 5 VC E = 300V I C = 30A I G = 10mA 1 0000
Fig. 12. Capacitance
f = 1M Hz
1 2
Capacitance - p F
C ies 1 000
VG E - Volts
9
6
C oes 1 00
3 C res 0 0 20 40 60 80 1 00 1 0 0 5 1 0 1 5 20 25 30 35 40
Q G - nanoCoulombs
IXYS reserves the right to change limits, test conditions, and dimensions.
V C E - Volts
IXGH 40N60C2 IXGT 40N60C2
F ig . 13. M aximu m Tran sien t Th ermal R esistan ce
0 .5
0 .4
R (th) J C - (C/W)
0 .3
0 .2
0 .1
0 1 10 100 10 0 0
Puls e W idth - millis ec onds
(c) 2005 IXYS All rights reserved

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