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| UNISONIC TECHNOLOGIES CO., LTD 5302 HIGH VOLTAGE NPN TRANSISTOR DESCRIPTION The UTC 5302 is a NPN silicon planar transistor and suited to be used in power amplifier applications. NPN SILICON TRANSISTOR 1 TO-251 FEATURES * Makes efficient anti-saturation operation * Low variable storage-time spread * Low base drive * Very suitable for half bridge light ballast application SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 5302L-TM3-T 5302G-TM3-T Note: Pin Assignment: B: Base C: Collector E: Emitter 5302L-TM3-T (1)Packing Type (2)Package Type (3)Lead Free Package TO-251 Pin Assignment 1 2 3 B C E Packing Tube (1) T: Tube (2) TM3: TO-251 (3) G: Halogen Free, L: Lead Free www..com www.unisonic.com.tw Copyright (c) 2010 Unisonic Technologies Co., Ltd 1 of 4 QW-R213-020.A 5302 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 800 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 10 V Collector Current IC 2 A Collector Peak Current (tp<5ms) 4 A ICM Base Current IB 1 A Base Peak Current (tp<5ms) 2 A IBM 25 W Power Dissipation (TC25) PD Junction Temperature TJ +150 Storage Temperature TSTG -65 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL JA JC RATINGS 100 5 UNIT /W /W www..com UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R213-020.A 5302 PARAMETER OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SYMBOL BVCEO BVCBO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE(SAT1) VCE(SAT2) VBE(SAT1) VBE(SAT2) NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS (Ta = 25, unless otherwise specified) TEST CONDITIONS IC=10mA, IE=0 (Note) IC=1mA, IB=0 IE=1mA, IC=0 VCB=800V, IE=0 VEB=9V, IC=0 VCE=5V, IC=10mA VCE=5V, IC=400mA VCE=5V, IC=1A IC=0.5A, IB=0.1A (Note) IC=1A, IB=0.25A (Note) IC=0.5A, IB=0.1A (Note) IC=1A, IB=0.25A (Note) VCC=250V, IC=1A, IB1=IB2=0.2A, tP=25uS Duty Cycle<1% MIN 400 800 10 1 1 10 10 5 1.1 TYP MAX UNIT V V V A A 30 0.5 1.5 1.1 1.2 0.3 0.4 0.9 V V S S S SWITCHING CHARACTERISTICS Turn On Time tON Fall Time tF Storage Time tSTG Note: Pulsed duration = 300S, Duty cycle2% 0.15 0.2 0.5 www..com UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R213-020.A 5302 TYPICAL CHARACTERISTICS 14 12 Collector Current , IC(mA) 10 8 6 4 2 0 0 Collector Current , IC(A) Collector Current VS. BVCEO 1400 1200 1000 800 600 400 200 00 NPN SILICON TRANSISTOR Collector Current VS. BVCBO 200 300 100 400 500 600 Collector-Emitter Breakdown Voltage ,BVCEO (V) 140 Emitter Current , IE(A) 120 100 80 60 40 20 0 0 2 4 6 8 10 12 14 16 18 20 Emitter Current VS. BVEBO 400 200 600 800 1000 Collector-Base Breakdown Voltage ,BVCBO (V) Emitter-Base Breakdown Voltage ,BVEBO (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or www..com other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R213-020.A |
Price & Availability of 5302
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