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| COM150A COM350A COM250A COM450A (COTS) COMMERCIAL OFF-THE-SHELF POWER MOSFET IN A TO-254AA PA C K A G E 100V Thru 500V, Up To 25 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES * * * * Isolated Hermetic Metal Package Fast Switching Low RDS(on) Standard Off-The-Shelf DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. MAXIMUM RATINGS @ PART NUMBER COM150A COM250A COM350A COM450A 25 C VD S 100 V 200 V 400 V 500 V R DS(on) .070 .100 .32 .42 I D 25 A 20 A 12 A 10 A 31 . S C H E M ATIC POWER RATING 8 09 R0 31 - 1 . 31 . COM150A - COM450A ELECTRICAL CHARACTERISTICS: STATIC Parameter B VDSS V GS(th) I GSSF ISSR G I DSS Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current I D(on) V DS(on) R DS(on) R DS(on) On-State Drain Current1 Static Drain-Source On-State Voltage1 Static Drain-Source On-State Resistance1 Static Drain-Source On-State Resistance1 35 11 . 01 . 02 . ( C = 25C unless otherwise noted) T ELECTRICAL CHARACTERISTICS: STATIC P/N COM250A Parameter B VD S S V GS(th) I GSSF ISSR G ISS D Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current I D(on) V DS(on) R DS(on) R DS(on) On-State Drain Current1 Static Drain-Source On-State Voltage1 Static Drain-Source On-State Resistance1 Static Drain-Source On-State Resistance1 30 01 . 02 . ( C = 25C unless otherwise noted) T P/N COM150A Min. Typ. Max. Units Test Conditions 100 20 . 40 . 100 -10 0 0.25 10 . V V nA nA mA mA A 13 . V VG S = 0 , I = 250 mA D V D S = VG S, D = 250 mA I V G S = +20 V V G S = -20 V V D S = Max. Rat., VG S = 0 V D S = 0.8 Max. Rat., VG S = 0 , TC = 125 C VD S 2 VDS(on),VG S = 10 V Min. Typ. Max. Units Test Conditions 200 20 . 40 . 100 -100 0.25 10 . V V nA nA mA mA A 1.36 1.60 .085 .100 0.15 0.18 V VG S = 0 , I = 250 mA D V D S = VG S, D = 250 mA I V G S = + 20 V VG S = - 2 V 0 V D S = Max. Rat., VG S = 0 V D S = 0.8 Max. Rat., VG S = 0 , TC = 125 C VD S 2 VDS(on),VG S = 10 V V G S = 1 V ID = 20 A 0, V G S = 1 V ID = 20 A 0, V G S = 1 V ID = 20 A, 0, TC = 125 C V G S = 1 V ID = 16 A 0, V G S = 1 V ID = 16 A 0, V G S = 1 V ID = 16 A, 0, TC = 125 C 0.55 0.07 10 . 0.12 gf s C iss C oss C rss t d(on) t r t(off) d t f Forward Transductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 90 . 2700 1300 470 28 45 100 50 S( ) V D S W pF pF pF ns ns ns ns 2 VDS(on), D = 20 A I gf s C iss C oss C rss t d(on) t r t(off) d t f Forward Transductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 10.0 2400 600 250 25 60 85 38 S( ) V D S W pF pF pF ns ns ns ns VG S = 0 V D S = 25 V f = 1 MHz V D D = 3 V ID @ 20 A 0, R g = 5 0 W ,VG = 10V . (MOSFET switching times are essentially independent of operating temperature.) BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS I S IM S VS D t r Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 400 Modified MOSPOWER D BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS I S IM S S -4 0 -10 6 - 25 . A symbol showing teitga PN h nerl G Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 350 -3 0 -10 2 -2 A J n t o r c i i r. ucin etfe V ns TC = 25 C IS = -40 A, VG S = 0 , , TJ = 150 C IF =IS, d F/ds = 100 A/ms l VS D t r 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. () W A A V ns () W 31 - 2 . DYNAMIC DYNAMIC 2 VDS(on), D = 16 A I VG S = 0 V D S = 25 V f = 1 MHz V D D = 7 V ID @ 16 A 5, R g = 5 0 W , G S = 10V . V (MOSFET switching times are essentially independent of operating temperature.) Modified MOSPOWER symbol showing teitga PN h nerl J n t o r c i i r. ucin etfe G D S TC = 25 C IS = -30 A, VG S = 0 , , TJ = 150 C IF =IS, d F/ds = 100 A/ms l ELECTRICAL CHARACTERISTICS: STATIC Parameter B VDSS V GS(th) I GSSF ISSR G I DSS Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current I D(on) V DS(on) R DS(on) R DS(on) On-State Drain Current1 Static Drain-Source On-State Voltage1 Static Drain-Source On-State Resistance1 Static Drain-Source On-State Resistance1 15 20 . 0.25 01 . 02 . ( C = 25C unless otherwise noted) T ELECTRICAL CHARACTERISTICS: STATIC P/N COM450A Parameter B VD S S V GS(th) I GSSF ISSR G ISS D Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current I D(on) V DS(on) R DS(on) R DS(on) On-State Drain Current1 Static Drain-Source On-State Voltage1 Static Drain-Source On-State Resistance1 Static Drain-Source On-State Resistance1 13 21 . 03 . 01 . 02 . ( C = 25C unless otherwise noted) T P/N COM350A Min. Typ. Max. Units Test Conditions 400 20 . 40 . 100 -10 0 0.25 10 . V V nA nA mA mA A 2.64 .2 3 V VG S = 0 , I = 250 mA D V D S = VG S, D = 250 mA I V G S = +20 V VG S = - 2 V 0 V D S = Max. Rat., VG S = 0 V D S = 0.8 Max. Rat., VG S = 0 , TC = 125 C VD S 2 VDS(on),VG S = 10 V Min. Typ. Max. Units Test Conditions 500 20 . 40 . 100 -10 0 0.25 10 . V V nA nA mA mA A 2.94 0.42 V VG S = 0 , I = 250 mA D V D S = VG S, D = 250 mA I V G S = +20 V VG S = - 2 V 0 V D S = Max. Rat., VG S = 0 V D S = 0.8 Max. Rat., VG S = 0 , TC = 125 C VD S 2 VDS(on),VG S = 10 V V G S = 1 V ID = 8.0 A 0, V G S = 1 V ID = 8.0 A 0, V G S = 1 V ID = 8 0 A 0, ., TC = 125 C V G S = 1 V ID = 7.0 A 0, V G S = 1 V ID = 7.0 A 0, V G S = 1 V ID = 7 0 A 0, ., TC = 125 C 0.51 0.67 0.67 0.89 gf s C iss C oss C rss t d(on) t r t(off) d t f Forward Transductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 60 . 2900 450 150 30 40 80 30 S( ) V D S W pF pF pF ns ns ns ns 2 VDS(on), D = 8.0 A I gf s C iss C oss C rss t d(on) t r t(off) d t f Forward Transductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 60 . 2600 280 40 30 46 75 31 S( ) V D S W pF pF pF ns ns ns ns VG S = 0 V D S = 25 V f = 1 MHz V D D = 2 0 V ID @ 8.0 A 0, R g = . W ,VG S =10V 50 (MOSFET switching times are essentially independent of operating temperature.) BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS I S IM S VS D t r Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 600 Modified MOSPOWER D BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS I S IM S S -1 5 -6 0 - 16 . A symbol showing teitga PN h nerl G Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 700 -1 3 -5 2 - 14 . A Jnto rciir ucin etfe. V ns TC = 25 C IS = -15 A, VG S = 0 , , TJ = 100 C IF =IS, d F/ds = 100 A/ms l VS D t r 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. () W A A V ns () W 31-3 . DYNAMIC DYNAMIC 2 VDS(on), D = 7.0 A I VG S = 0 V D S = 25 V f = 1 MHz V D D = 2 0 V ID @ 7.0 A 1, R g = 5 0 W ,VG S = 10 V . (MOSFET switching times are essentially independent of operating temperature.) Modified MOSPOWER symbol showing teitga PN h nerl Jnto rciir ucin etfe. G D COM150A - COM450A S TC = 25 C IS = -13 A, VG S = 0 , , TJ = 150 C IF =IS, d F/ds = 100 A/ms l 31 . COM150A - COM450A ABSOLUTE MAXIMUM RATINGS ( C = 25C unless otherwise noted) T Parameter VD S VD G R I @ TC = 25C D I @ TC = 100C D IM D VG S P D @ TC = 25C P D @ TC = 100C Junction To Case Junction To Ambient TJ Tstg Lead Temperature Drain-Source Voltage Drain-Gate Voltage (RG S = 1 M ) Continuous Drain Current2 Continuous Drain Current2 Pulsed Drain Current1 COM150A 100 100 25 16 100 20 125 50 10 . .020 COM250A COM350A COM450A 200 200 25 16 80 20 125 50 10 . .020 400 400 13 8 54 20 125 50 10 . .020 500 500 11 7 40 20 125 50 10 . .020 Units V V A A A V W W W/C W/C Gate-Source Voltage Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Linear Derating Factor Operating and Storage Temperature Range (1/16" from case for 10 secs.) 2%. -55 to 150 300 -55 to 150 300 -55 to 150 300 -55 to 150 300 C C 1 Pulse Test: Pulse width 300 sec. Duty Cycle 2 Package Pin Limitation = 15 Amps THERMAL RESISTA N C E R thJC R thJA Junction-to-Case Junction-to-Ambient 10 . 50 C/W C/W Free Air Operation MECHANICAL OUTLINE .144 DIA. .545 .535 .050 .040 31 . .685 .665 .800 .790 .550 .530 1 2 3 .550 .510 .045 .035 .150 TYP. .260 .249 .005 .150 TYP. P n 1 Drain i: P n 2 Source i: P n 3 Gate i: 205 Crawford Street, Leominster, MA 01453 USA (978) 534-5776 FAX (978) 537-4246 |
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