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| www..com PD - 94721 HEXFET(R) POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number IRL7NJ3802 BVDSS IRL7NJ3802 12V, N-CHANNEL RDS(on) 0.0085 ID 22A* 12V Seventh Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. SMD-0.5 Features: n n n n n n n Low RDS(on) Avalanche Energy Ratings Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 4.5V, TC = 25C ID @ VGS = 4.5V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight * Current is limited by package For footnotes refer to the last page 300 (for 5 s) 1.0 22* 22* 88 50 0.4 12 130 22 5.0 -55 to 150 Units A W W/C V mJ A mJ o C g www.irf.com 1 08/13/03 IRL7NJ3802 Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 12 -- -- -- 0.6 42 -- -- -- -- -- -- -- -- -- -- -- -- Typ Max Units -- 0.009 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.0 -- -- V V/C Test Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 1.0mA VGS = 4.5V, ID = 22A VGS = 2.8V, ID = 22A VDS = VGS, ID = 250A VDS = 6.0V, IDS = 22A VDS = 9.6V ,VGS=0V VDS = 9.6V, VGS = 0V, TJ =125C VGS = 12V VGS = -12V VGS =4.5V, ID = 22A VDS = 6.0V VDD = 6.0V, ID = 22A, VGS = 4.5V, RG = 6.0 0.0085 0.03 1.9 V -- S( ) 100 A 250 100 -100 41 12 10.5 15 115 30 25 -- IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 6.0V f = 1.0MHz f = 1.33MHz, open drain Ciss C oss C rss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance -- -- -- -- 2470 2130 500 1.9 -- -- -- -- pF Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units -- -- -- -- -- -- -- -- -- -- 22* 88 1.2 40 40 Test Conditions A Tj = 25C, IS = 22A, VGS = 0V Tj = 25C, IF = 22A, di/dt 100A/s VDD 6.0V V nS nC Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max -- -- 2.5 Units C/W Test Conditions Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com IRL7NJ3802 1000 VGS TOP 10V 5.0V 4.5V 3.0V 2.5V 2.25V 2.0V BOTTOM 1.75V 1000 VGS 10V 5.0V 4.5V 3.0V 2.5V 2.25V 2.0V BOTTOM 1.75V TOP ID , Drain-to-Source Current (A) 100 ID , Drain-to-Source Current (A) 100 10 1 1.75V 60s PULSE WIDTH Tj = 25C 0.1 1 10 100 10 1.75V 60s PULSE WIDTH Tj = 150C 0.1 1 10 100 0.1 1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 22A ID , Drain-to-Source Current ( ) T J = 150C 10 T J = 25C 1.5 1.0 0.5 1 1.5 2 VDS = 10V 15 60s PULSE WIDTH 2.5 3 3.5 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRL7NJ3802 5000 4500 4000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHz Ciss = C gs + Cgd, C ds Crss = Cgd Coss = Cds + Cgd 16 SHORTED ID = 22A 12 C, Capacitance(pF) 3500 3000 2500 2000 1500 1000 500 0 1 VDS = 9.6V VDS = 6V Ciss 8 Coss Crss 4 0 10 100 0 10 20 FOR TEST CIRCUIT SEE FIGURE 13 40 50 30 60 VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 T J = 150C OPERATION IN THIS AREA LIMITED BY R DS(on) ISD , Reverse Drain Current ( ) T J = 25C 10 ID, Drain-to-Source Current (A) 100 100s 1ms 10ms 1 10 Tc = 25C Tj = 150C Single Pulse 0.1 1 10 0.1 0.2 0.4 0.6 0.8 1.0 VGS = 0V 1.2 1.4 1 100 VSD , Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRL7NJ3802 70 LIMITED BY PACKAGE 60 VDS VGS RG RD D.U.T. + I D , Drain Current (A) 50 -VDD 40 30 VGS Pulse Width 1 s Duty Factor 0.1 % 20 Fig 10a. Switching Time Test Circuit VDS 90% 25 50 75 100 125 150 10 0 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01 1 P DM t1 t2 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRL7NJ3802 300 EAS , Single Pulse Avalanche Energy (mJ) 1 5V 250 TOP BOTTOM ID 10A 14A 22A VDS L D R IV E R 200 RG 2VGS 0V tp D .U .T. IA S 150 + - VD D A 100 0 .0 1 50 Fig 12a. Unclamped Inductive Test Circuit 0 25 50 75 100 125 150 V (B R )D SS tp Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 4.5V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRL7NJ3802 Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = 25 V, Starting TJ = 25C, L=0.5mH Peak IAS = 22A, RG= 25 Pulse width 300 s; Duty Cycle 2% Case Outline and Dimensions -- SMD-0.5 PAD ASSIGNMENTS IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 08/03 www.irf.com 7 |
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