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74V2G70 TRIPLE BUFFER s s s s s s s s HIGH SPEED: tPD = 3.0ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1A(MAX.) at TA=25C HIGH NOISE IMMUNITY: VNIH = V NIL = 28% VCC (MIN.) POWER DOWN PROTECTION ON INPUTS AND OUTPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8mA (MIN) at VCC = 4.5V IIOH| = IOL = 4mA (MIN) at VCC = 3.0V BALANCED PROPAGATION DELAYS: tPLH tPHL OPERATING VOLTAGE RANGE: VCC(OPR) = 2V to 5.5V IMPROVED LATCH-UP IMMUNITY SOT23-8L SOT323-8L ORDER CODES PACKAGE SOT23-8L SOT323-8L T&R 74V2G70STR 74V2G70CTR DESCRIPTION The 74V2G70 is an advanced high-speed CMOS TRIPLE NOT INVERTED BUFFER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS tecnology. The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output. Power down protection is provided on all inputs and outputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V systems and it is ideal for portable applications like personal digital assistant, camcorder and all battery-powered equipment. All inputs and outputs are equipped with protection circuits against static discharge, giving them ESD immunity and transient excess voltage. PIN CONNECTION AND IEC LOGIC SYMBOLS November 2001 1/10 74V2G70 INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No 1, 3, 6 7, 5, 2 4 8 SYMBOL 1A, 2A, 3A 1Y, 2Y, 3Y GND VCC NAME QND FUNCTION Data Inputs Data Outputs Ground (0V) Positive Supply Voltage TRUTH TABLE nA L H nY L H ABSOLUTE MAXIMUM RATINGS Symbol VCC VI VO VO IIK IOK IO Tstg TL Supply Voltage DC Input Voltage DC Output Voltage (see note 1) DC Output Voltage (see note 2) DC Input Diode Current DC Output Diode Current DC Output Current Storage Temperature Lead Temperature (10 sec) Parameter Value -0.5 to +7.0 -0.5 to +7.0 -0.5 to +7.0 -0.5 to VCC + 0.5 - 20 - 20 25 50 -65 to +150 260 Unit V V V V mA mA mA mA C C ICC or IGND DC VCC or Ground Current Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. 1) Vcc=0V 2) High or Low State RECOMMENDED OPERATING CONDITIONS Symbol VCC VI VO VO Top dt/dv Supply Voltage Input Voltage Output Voltage (see note 1) Output Voltage (see note 2) Operating Temperature Input Rise and Fall Time (note 3) (VCC = 3.3 0.3V) (VCC = 5.0 0.5V) Parameter Value 2 to 5.5 0 to 5.5 0 to 5.5 0 to VCC -55 to 125 0 to 100 0 to 20 Unit V V V V C ns/V ns/V 1) Vcc=0V 2) High or Low State 3) VIN from 30% to 70% of V CC 2/10 74V2G70 DC SPECIFICATIONS Test Condition Symbol Parameter VCC (V) 2.0 3.0 to 5.5 2.0 3.0 to 5.5 2.0 3.0 4.5 3.0 4.5 VOL Low Level Output Voltage 2.0 3.0 4.5 3.0 4.5 II ICC IOPD Input Leakage Current Quiescent Supply Current Power down Output Leakage Current 0 to 5.5 5.5 0 IO=-50 A IO=-50 A IO=-50 A IO=-4 mA IO=-8 mA IO=50 A IO=50 A IO=50 A IO=4 mA IO=8 mA VI = 5.5V or GND VI = VCC or GND VO = 5.5 TA = 25C Min. 1.5 0.7VCC 0.5 0.3VCC 1.9 2.9 4.4 2.58 3.94 0.0 0.0 0.0 0.1 0.1 0.1 0.36 0.36 0.1 1 0.5 2.0 3.0 4.5 1.9 2.9 4.4 2.48 3.8 0.1 0.1 0.1 0.44 0.44 1 10 5 Typ. Max. Value -40 to 85C Min. 1.5 0.7VCC 0.5 0.3VCC 1.9 2.9 4.4 2.4 3.7 0.1 0.1 0.1 0.55 0.55 1 20 10 A A A V V Max. -55 to 125C Min. 1.5 0.7VCC 0.5 0.3VCC V V Max. Unit VIH High Level Input Voltage Low Level Input Voltage High Level Ouput Voltage VIL VOH AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3ns) Test Condition Symbol Parameter VCC (V) 3.3(*) 3.3 5.0 (*) Voltage range is 3.3V 0.3V (**) Voltage range is 5.0V 0.5V (*) (**) Value TA = 25C Min. Typ. 3.7 5.3 3.0 4.1 Max. 7.0 8.0 5.0 6.5 -40 to 85C Min. 1.0 1.0 1.0 1.0 Max. 8.0 9.5 6.0 7.5 -55 to 125C Min. 1.0 1.0 1.0 1.0 Max. 9.0 10.5 7.0 8.5 ns Unit CL (pF) 15 50 15 50 tPLH tPHL Propagation Delay Time 5.0(**) 3/10 74V2G70 CAPACITANCE CHARACTERISTICS Test Condition Symbol Parameter Min. CIN CPD Input Capacitance Power Dissipation Capacitance (note 1) TA = 25C Typ. 4 12 Max. 10 Value -40 to 85C Min. Max. 10 -55 to 125C Min. Max. 10 pF pF Unit 1) CPD is defined as the value of the IC's internal equivqlent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average current cqn be obtqined by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/2 DYNAMIC SWITCHING CHARACTERISTICS Test Condition Symbol Parameter VCC (V) CL = 50pF VIL = 0V, VIH = 3.3V Value TA = 25 C Min. VOLP VOLV Dynamic Low Level Quiet Output (note 1) 5.0 Max. 0.8 -0.8 V Unit 1) Number of output defined as "n". Measured with "n-1" outputs switching from HIGH to LOW or LOW to HIGH. The remaining outputs is measured in the LOW state. 4/10 74V2G70 TEST CIRCUIT CL = 15/50pF or equivalent (includes jig and probe capacitance) RT = ZOUT of pulse generator (typically 50) WAVEFORM: PROPAGATION DELAY (f=1MHz; 50% duty cycle) 5/10 74V2G70 SOT23-8L MECHANICAL DATA mm. DIM. MIN. A A1 A2 b C D E E1 e e1 L 0.35 0.90 0.00 0.90 0.22 0.09 2.80 2.60 1.50 0 .65 1.95 0.55 13.7 TYP MAX. 1.45 0.15 1.30 0.38 0.20 3.00 3.00 1.75 MIN. 35.4 0.0 35.4 8.6 3.5 110.2 102.3 59.0 25.6 76.7 21.6 TYP. MAX. 57.1 5.9 51.2 14.9 7.8 118.1 118.1 68.8 mils 6/10 74V2G70 SOT323-8L MECHANICAL DATA mm. DIM. MIN. A A1 A2 b C D E E1 e e1 L 0.10 0.80 0.00 0.80 0.13 0.10 1.80 1.80 1.15 0.5 1.5 0.30 3.9 TYP MAX. 1.10 0.10 1.00 0.28 0.18 2.20 2.40 1.35 MIN. 31.5 0.0 31.5 5.1 3.9 70.9 70.9 45.3 19.7 59.0 11.8 TYP. MAX. 43.3 3.9 34.9 11.0 7.1 86.6 94.5 53.1 mils 7/10 74V2G70 Tape & Reel SOT23-xL MECHANICAL DATA mm. DIM. MIN. A C D N T Ao Bo Ko Po P 3.13 3.07 1.27 3.9 3.9 3.23 3.17 1.37 4.0 4.0 12.8 20.2 60 14.4 3.33 3.27 1.47 4.1 4.1 0.123 0.120 0.050 0.153 0.153 0.127 0.124 0.054 0.157 0.157 13.0 TYP MAX. 180 13.2 0.504 0.795 2.362 0.567 0.131 0.128 0.0.58 0.161 0.161 0.512 MIN. TYP. MAX. 7.086 0.519 inch 8/10 74V2G70 Tape & Reel SOT323-xL MECHANICAL DATA mm. DIM. MIN. A C D N T Ao Bo Ko Po P 3.98 3.98 2.25 2.7 1.2 4 4 4.2 4.2 0.156 0.156 175 12.8 20.2 59.5 60 60.5 14.4 0.088 0.106 0.047 0.157 0.157 0.165 0.165 TYP 180 13 MAX. 185 13.2 MIN. 6.889 0.504 0.795 2.362 0.567 TYP. 7.086 0.512 MAX. 7.283 0.519 inch 9/10 74V2G70 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2001 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com 10/10 |
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