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| * an AMP company ==5= ,,-= E ---== EF .-----z ,= Radar Pulsed Power Transistor, 11 W, lps Pulse, 10% Duty PH3134-11S 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package Absolute Maximum Ratings at 25C I .I00 I / I ;2.54>--- ,250 -.152-.x0 (3.86-25) 75.35>-7 ,130 -7(3.30:~ I I .034'.031 StorageTemperature T STG -65 to +200 "`2 UNLESS IT-ERWISE NCTEC, TZLESANCES ARE INCES :MJLLIMETERS =.305' =.!3MW> Electrical Characteristics Parameter Collector-Emitter Collector-Emitter Breakdown Voltage Leakage Current at 25C Symbol BV,,, `Es R TWC, P IN GP % Min I 60 Max 1 1.25 1.4 1.74 Units I V mA "CM' w I,=1 2.5 mA lest Conditions I V,,=36 I',,=36 V,c=36 V V, P,,,=ll V, P,,,.=ll W, F=3.1,3.25,3.4 W, F=3.1,3.25,3.4 GHz GHz GHz GHz GHz Thermal Resistance input Power Power Gain Collector Efficiency input Return Loss Load Mismatch Tolerance 8.0 2:l dB % dB - V,,=38 I',,=36 I',,=36 V, Pour=1 1 W, F=3.1, 3.25,3.4 V. P,,=ll V, P,,,=ll W. F=3.1,3.25,3.4 W, F=3.1,3.25,3.4 1 W, F=3.25 GHz 35 6 RL VSWR-T - Vcc=36 V, P,el Broadband Test Fixture Impedances F(GHz) 3.10 3.25 I z,,m 17.5 - j8.5 15.0j8.2 I z,Fcm 90.0 + j37.0 58.0 + j7.0 A 3.40 13.0 - j8.0 36.0 + j14.5 - Specifications Subject to Change Without Notice. Radar Pulsed Power Transistor, 11 W PH3134-11S v2.00 RF Test Fixture BNC ELECTROLYTIC 50 uF 50 V HALLDRY CONNECTOR I CAPACITOR POHWA ELECTRONICS 2451 I TTSOHSDA GROUND ROLLUVER,\ PC B ROGE .025' 0lClKE, 3 TURN, JO' DIA NU 26 -HPN SMACONNECTOR WA-COM 2052-5636-02 2 PLACES ALUMINUM 73050258-03- 73050258-02 TOP VIEW Test Fixture PC Board Dimensions "a |
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