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UPF1010 10W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS
This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power Amplifiers in Class A or AB operation.
* Industry standard package. * Low intermodulation distortion of-30dBc at 10W (PEP). www..com * Gold Metalization, Gold Bond Wires, Gold-Plated Packages.
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Package Type 440095 UPF1010F
Package Type 440109 UPF1010P
4-1
UPF1010
Maximum Ratings
Rating
Drain to Source Voltage, gate connected to source www..com Gate to Source Voltage Total Device Dissipation @ Tcase = 70C Derate above 70C
Symbol
VDSS VGS PD TSTG TJ
Value
65
+/- 20
Unit
Volts Volts Watts W/C C C
20 0.2 -65 to +150 200
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Storage Temperature Range Operating Junction Temperature
Thermal Characteristics
Characteristics
Thermal Resistance, Junction to Case
Symbol
JC
Maximum
3.6, 3.2
Unit
C/W
Electrical DC Characteristics (TC=25C unless otherwise specified)
Rating
Drain to Source Voltage, gate connected to source (VGS=0, IDS=1mA) Drain to Source Leakage current (VDS=28V, VGS=0) Gate to Source Leakage current (VGS=20V, VDS=0) Threshold Voltage (VDS=10V, IDS=1mA) Gate Quiescent Voltage (VDS=26 V, IDS=95mA) Drain to Source On Voltage (VDS=10V, IDS=1A) Forward Transconductance (VDS=10V, ID=0.5A)
Symbol
BVDSS IDSS IGSS VTH VGS(on) VDS(on) GM
Min
65 2.0 3.0 -
Typ
3.0 4.0 0.9 .5
Max
100 1.0 5.0 6.0 -
Unit
Volts A A Volts Volts Volts S
4-2
UPF1010
AC Characteristics (TC=25C unless otherwise specified)
Rating
Input Capacitance (VDS=26V, VGS=0, freq= 1MHz) www..com Output capacitance (VDS= 26V, VGS=0V, freq= 1MHz) Feedback capacitance (VDS=26V, VGS=0V, freq= 1MHz)
Symbol
CISS COSS CRSS
Min
-
Typ
12.4 8.5 .6
Max
-
Unit
pF pF pF
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RF and Functional Tests (TC=25C unless otherwise specified, UltraRF Broadband Fixture)
Rating
Linear Power Gain, Single Tone (VDS=26V, IDQ=95mA, POUT=3W, f=940 MHz) Compressed Power Gain, Single tone (VDS=26V, IDQ=95mA, POUT=10W, f=940 MHz) Drain Efficiency, Single Tone (VDS=26V, IDQ=95mA, POUT=10W, f=940 MHz) Intermodulation Distortion, Two Tone (VDS=26V, IDQ=95mA, POUT=10W PEP f1=940 MHz, f2=940.1MHz) Load Mismatch Tolerance (VDS=26V, IDQ=95mA, POUT=10W, f=940 MHz)
Symbol
Gplin
Min
14.0
Typ
15.5
Max
-
Unit
dB
Gps
13.5
15.0
-
dB
40
45
-
%
IMD
-
-33
-30
dBc
VSWR
10:1
-
-
CAUTION - MOS Devices are susceptible to damage from ElectroStatic Discharge (ESD). Appropriate precautions in handling, packaging and testing MOS devices must be observed.
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UPF1010
Power Gain vs Output Power 19 18
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17 I = 140 mA DQ 16 15 14 13 12 11 10 15 20 25 30 35 POUT, Output Power (dBm) V DD = 26 V f = 940 MHz 40 45 50 mA 95 mA
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4-4
G PE , Gain (dB)
UPF1010
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4-5
UPF1010
Intermodulation Distortion vs Output Power -10
IMD3, 3rd Order Intermodulation Distortion (dBc)
-15 -20 -25 -30 -35 -40 -45 -50 -55 -60 25 30 35 POUT , Output Power (dBm), PEP V DD = 26 V f1 = 940.0 MHz f2 = 940.1 MHz 40 45 95 mA 140 mA IDQ = 50 mA
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4-6
UPF1010
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4-7
UPF1010
Capacitance vs Drain Voltage 25
20
C, Capacitance (pF)
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15
CISS COSS
4
10
5 CRSS 0 0.0 5.0 10.0 15.0 20.0 25.0 V DS Drain-Source Voltage (V) ,
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UPF1010
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4-9
UPF1010
Mean Time To Failure 10000000
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MTF, Mean Time To Failure (Hrs)
1000000
ID = .2 A
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100000
.7 A 1.2 A
10000
1000 120 140 160 180 200 220 TJ , Junction Temperature ( C )
4-10
UPF1010
VDD = 26V lDQ = 95mA
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Frequency (MHz)
900 940 980 Note: Measured in 440095 Package ZS = 6j5.5 ZL+11+j3
Z Source
Z Load
11.58 + j2.16 9.92 + j2.06 19.06 + j1.81
4-11
UPF1010
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