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TOSHIBA
Oct. 1999
TIM1414-10LA-252
1. RF PERFORMANCE SPECIFICATIONS
CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Efficiency 3rd Order Intermodulation Distortion Channel Temperature Rise SYMBOL P1dB VDS= 9V G1dB IDS f =13.75-14.5GHz 4.5 2-tone test Po=29dBm(SCL) VDS x IDS x Rth -42 5.5 4.0 23 -45 5.0 90 dB A % dBc C
( Ta= 25C ) Ta= 25
MIN. TYP. MAX. UNIT 39.0 39.5 dBm
CONDITION
add
IM3 Tch
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DataShee
2. ELECTRICAL CHARACTERISTICS
CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL
Ta= 25 ( Ta= 25C )
MIN. TYP. MAX. UNIT -2.0 -5 2800 -3.5 -5.0 mS V A V C/W
CONDITION VDS= 3V IDS= 4.8A VDS= 3V IDS= 145mA VDS= 3V VGS=0V IGS= -145A
Channel to Case
gm
VGSoff IDSS VGSO Rth(c-c)
10.0 11.5 2.0 2.5
Applications Engineering Solid-State Engineering Department
TOSHIBA CORPORATION, Komukai Operations
.com
-1-
.com DataSheet 4 U .com


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