View BCR5AS-12_287921.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MITSUBISHI SEMICONDUCTOR TRIAC
BCR5AS
Refer to the page 6 as to the product guaranteed maximum junction temperature 150C
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR5AS
OUTLINE DRAWING
Dimensions in mm
6.5 4
1.50.2
5.00.2
0.50.1
TYPE NAME VOLTAGE CLASS
5.50.2
0.9 MAX
1.0 2.3
2.3 MIN
1.0 MAX
10 MAX
0.50.2 0.8
2.3
2.3
Measurement point of
case temperature
1
2
3 1 2 33 4 T1 TERMINAL T2 TERMINAL GATE TERMINAL T2 TERMINAL
24
* IT (RMS) ........................................................................ 5A * VDRM ....................................................................... 600V * IFGT !, IRGT !, IRGT # ............................................ 30mA APPLICATION Hybrid IC, solid state relay, switching mode power supply, light dimmer, electric fan, electric blankets, control of household equipment such as washing machine, other general purpose control applications
1
MP-3
MAXIMUM RATINGS
Symbol VDRM VDSM Parameter Repetitive peak off-state voltage 1 Non-repetitive peak off-state voltage 1 Voltage class 12 600 720 Unit V V
Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg --
Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value
Conditions Commercial frequency, sine full wave 360 conduction, Tc=103C3 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
Ratings 5 50 10.4 3 0.3 10 2 -40 ~ +125 -40 ~ +125 0.26
Unit A A A2s W W V A C C g
1. Gate open.
Mar. 2002
MITSUBISHI SEMICONDUCTOR TRIAC
BCR5AS
Refer to the page 6 as to the product guaranteed maximum junction temperature 150C
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Limits Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD Rth (j-c) (dv/dt)c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage
4
Parameter Repetitive peak off-state current On-state voltage ! Gate trigger voltage 2 @ # ! Gate trigger current 2 @ # Tj=125C, VD=1/2VDRM Junction to case 3 Tj=125C
Test conditions Tj=125C, VDRM applied Tc=25C, ITM=7A, Instantaneous measurement
Min. -- -- --
Typ. -- -- -- -- -- -- -- -- -- -- --
Max. 2.0 1.8 1.5 1.5 1.5 30 30 30 -- 3.0 --
Unit mA V V V V mA mA mA V C/ W V/s
Tj=25C, VD=6V, RL=6, RG=330
-- -- --
Tj=25C, VD=6V, RL=6, RG=330
-- -- 0.2 -- 5
2. Measurement using the gate trigger characteristics measurement circuit. 3. Case temperature is measured on the T2 terminal. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
Commutating voltage and current waveforms (inductive load)
1. Junction temperature Tj=125C 2. Rate of decay of on-state commutating current (di/dt)c=-2.5A/ms 3. Peak off-state voltage VD=400V
SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c
TIME
TIME TIME VD
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS 102
ON-STATE CURRENT (A) SURGE ON-STATE CURRENT (A)
RATED SURGE ON-STATE CURRENT 100 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102
7 5 3 2 Tj = 125C
101 7 5 3 2 100 7 5 3 2 10-1 0.6 1.4
Tj = 25C
2.2
3.0
3.8
4.6
ON-STATE VOLTAGE (V)
CONDUCTION TIME (CYCLES AT 60Hz)
Mar. 2002
MITSUBISHI SEMICONDUCTOR TRIAC
BCR5AS
Refer to the page 6 as to the product guaranteed maximum junction temperature 150C
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE CHARACTERISTICS (, AND )
GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE
100 (%)
GATE VOLTAGE (V)
101 7 5 3 VGT = 1.5V 2 100 7 5 3 2
PGM = 3W PGM = 0.3W IGM = 2A
GATE TRIGGER CURRENT (Tj = tC) GATE TRIGGER CURRENT (Tj = 25C)
102 7 5 3 2 VGM = 10V
103 7 5 4 3 2
TYPICAL EXAMPLE IRGT III IRGT I
IFGT I IRGT I IRGT III
102 IFGT I 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C)
VGD = 0.2V 10-1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA)
GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE
MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE)
100 (%)
GATE TRIGGER VOLTAGE (Tj = tC) GATE TRIGGER VOLTAGE (Tj = 25C)
103 7 5 4 3 2 102 7 5 4 3 2
TRANSIENT THERMAL IMPEDANCE (C/W)
4.0 3.6 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz)
TYPICAL EXAMPLE
101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C)
MAXIMUM ON-STATE POWER DISSIPATION
ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE
ON-STATE POWER DISSIPATION (W)
8
6 360 CONDUCTION 5 RESISTIVE, INDUCTIVE 4 LOADS 3 2 1 0 0 1 2 3 4 5 6 7 8
CASE TEMPERATURE (C)
7
140 120 100 80 60 40
360 CONDUCTION 20 RESISTIVE, INDUCTIVE LOADS 0 0 1 2 3 4
5
6
7
8
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
Mar. 2002
MITSUBISHI SEMICONDUCTOR TRIAC
BCR5AS
Refer to the page 6 as to the product guaranteed maximum junction temperature 150C
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
AMBIENT TEMPERATURE (C)
120 100 80 60
170 170 t2.3 140 140 t2.3 80 80 t2.3
AMBIENT TEMPERATURE (C)
ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE ALUMINUM 140
ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE LOADS 100 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 RMS ON-STATE CURRENT (A)
NATURAL 40 CONVECTION CURVES APPLY RESISTIVE 20 REGARDLESS OF INDUCTIVE, CONDUCTION ANGLE LOADS 0 0 8 1 2 3 4 5 6 7 RMS ON-STATE CURRENT (A)
100 (%)
REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) TYPICAL EXAMPLE
HOLDING CURRENT (mA)
HOLDING CURRENT VS. JUNCTION TEMPERATURE 102 7 5 4 3 2 101 7 5 4 3 2 100 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) VD = 12V DISTRIBUTION TYPICAL EXAMPLE
REPETITIVE PEAK OFF-STATE CURRENT (Tj = tC) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25C)
LACHING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 3 2 102 7 5 3 2
+ T2 , G+ TYPICAL - T2 , G- EXAMPLE
BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE
100 (%)
160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100120 140 JUNCTION TEMPERATURE (C)
LACHING CURRENT (mA)
101 7 5 3 2 100 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C)
BREAKOVER VOLTAGE (Tj = tC) BREAKOVER VOLTAGE (Tj = 25C)
DISTRIBUTION
+ T2 , G- TYPICAL EXAMPLE
Mar. 2002
MITSUBISHI SEMICONDUCTOR TRIAC
BCR5AS
Refer to the page 6 as to the product guaranteed maximum junction temperature 150C
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
100 (%)
CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/s)
BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 140 TYPICAL EXAMPLE Tj = 125C
COMMUTATION CHARACTERISTICS 7 5 4 3 2 101 7 5 4 3 2 100 70 10
SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c TIME (di/dt)c TIME TIME VD
BREAKOVER VOLTAGE (dv/dt = xV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s )
120 100 80 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/s) I QUADRANT III QUADRANT
TYPICAL EXAMPLE Tj = 125C IT = 4A = 500s VD = 200V f = 3Hz I QUADRANT
MINIMUM CHARACTERISTICS VALUE
III QUADRANT 2 3 4 5 7 101 2 3 4 5 7 102
RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms)
GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 102 7 5 4 3 2 101 100
100 (%)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6 6
TYPICAL EXAMPLE IRGT III 6V IRGT I V A RG 6V V A RG
GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC)
IFGT I
TEST PROCEDURE 1 6
TEST PROCEDURE 2
6V 2 3 4 5 7 101 2 3 4 5 7 102 V
A RG
GATE CURRENT PULSE WIDTH (s)
TEST PROCEDURE 3
Mar. 2002
MITSUBISHI SEMICONDUCTOR TRIAC
BCR5AS
The product guaranteed maximum junction temperature 150C (See warning.)
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR5AS
OUTLINE DRAWING
Dimensions in mm
6.5 4
1.50.2
5.00.2
0.50.1
TYPE NAME VOLTAGE CLASS
5.50.2
0.9 MAX
1.0 2.3
2.3 MIN
1.0 MAX
10 MAX
0.50.2 0.8
2.3
2.3
Measurement point of
case temperature
1
2
3 1 2 33 4 T1 TERMINAL T2 TERMINAL GATE TERMINAL T2 TERMINAL
24
* IT (RMS) ........................................................................ 5A * VDRM ....................................................................... 600V * IFGT !, IRGT !, IRGT # ............................................ 30mA APPLICATION Hybrid IC, solid state relay, switching mode power supply, light dimmer, electric fan, electric blankets, control of household equipment such as washing machine, other general purpose control applications
1
MP-3
(Warning) 1. Refer to the recommended circuit values around the triac before using. 2. Be sure to exchange the specification before using. If not exchanged, general triacs will be supplied.
MAXIMUM RATINGS
Symbol VDRM VDSM Parameter Repetitive peak off-state voltage 1 Non-repetitive peak off-state voltage 1 Voltage class 12 600 720 Unit V V
Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg --
Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value
Conditions Commercial frequency, sine full wave 360 conduction, Tc=128C3 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
Ratings 5 50 10.4 3 0.3 10 2 -40 ~ +150 -40 ~ +150 0.26
Unit A A A2s W W V A C C g
1. Gate open.
Mar. 2002
MITSUBISHI SEMICONDUCTOR TRIAC
BCR5AS
The product guaranteed maximum junction temperature 150C (See warning.)
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Limits Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD Rth (j-c) (dv/dt)c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage
4
Parameter Repetitive peak off-state current On-state voltage ! Gate trigger voltage 2 @ # ! Gate trigger current 2 @ #
Test conditions Tj=150C, VDRM applied Tc=25C, ITM=7A, Instantaneous measurement
Min. -- -- --
Typ. -- -- -- -- -- -- -- -- -- -- --
Max. 2.0 1.8 1.5 1.5 1.5 30 30 30 -- 3.0 --
Unit mA V V V V mA mA mA V C/ W V/s
Tj=25C, VD=6V, RL=6, RG=330
-- -- --
Tj=25C, VD=6V, RL=6, RG=330
-- --
Tj=125C/150C, VD=1/2VDRM Junction to case 3 Tj=125/150C
0.2/0.1 -- 5/1
2. Measurement using the gate trigger characteristics measurement circuit. 3. Case temperature is measured on the T2 terminal. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
Commutating voltage and current waveforms (inductive load)
1. Junction temperature Tj=125C/150C 2. Rate of decay of on-state commutating current (di/dt)c=-2.5A/ms 3. Peak off-state voltage VD=400V
SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c
TIME
TIME TIME VD
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS 102
SURGE ON-STATE CURRENT (A)
7 5
RATED SURGE ON-STATE CURRENT 100 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102
ON-STATE CURRENT (A)
3 2
101
7 5 3 2
Tj = 150C
100
7 5 3 2
Tj = 25C 1.0 1.5 2.0 2.5 3.0 3.5 4.0
10-1 0.5
ON-STATE VOLTAGE (V)
CONDUCTION TIME (CYCLES AT 60Hz)
Mar. 2002
MITSUBISHI SEMICONDUCTOR TRIAC
BCR5AS
The product guaranteed maximum junction temperature 150C (See warning.)
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE CHARACTERISTICS (, AND )
100 (%)
GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 103
7 5 3 2
5 3 2 VGM = 10V
GATE VOLTAGE (V)
TYPICAL EXAMPLE IRGT III IRGT I
PGM = 3W PGM = 0.3W IGM = 2A
GATE TRIGGER CURRENT (Tj = tC) GATE TRIGGER CURRENT (Tj = 25C)
101 7 5 3 VGT = 1.5V 2 100 7 5 3 2
102
7 5 3 2
IFGT I
IFGT I IRGT I IRGT III
101
7 5 3 2
VGD = 0.1V 10-1 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA)
100 -60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C)
GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE
100 (%)
MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE)
TRANSIENT THERMAL IMPEDANCE (C/W)
GATE TRIGGER VOLTAGE (Tj = tC) GATE TRIGGER VOLTAGE (Tj = 25C)
103 7 5 4 3 2 102 7 5 4 3 2 101
4.0 3.6 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz)
TYPICAL EXAMPLE
-60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C)
MAXIMUM ON-STATE POWER DISSIPATION
ON-STATE POWER DISSIPATION (W)
ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160
CASE TEMPERATURE (C)
8 7 6 360 CONDUCTION 5 RESISTIVE, INDUCTIVE 4 LOADS 3 2 1 0 0 1 2 3 4 5 6 7 8
140 120 100 80 60
CURVES APPLY REGARDLESS OF CONDUCTION ANGLE
360 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 2 0 1 3
4
5
6
7
8
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
Mar. 2002
MITSUBISHI SEMICONDUCTOR TRIAC
BCR5AS
The product guaranteed maximum junction temperature 150C (See warning.)
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
AMBIENT TEMPERATURE (C)
100 80 60
80 80 t2.3
AMBIENT TEMPERATURE (C)
ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE ALUMINUM 140 170 170 t2.3 120 140 140 t2.3
ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS, CURVES 140 APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE 100 LOADS 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 RMS ON-STATE CURRENT (A)
NATURAL 40 CONVECTION RESISTIVE CURVES APPLY 20 REGARDLESS OF INDUCTIVE, CONDUCTION ANGLE LOADS 0 1 2 3 4 5 6 7 0 8 RMS ON-STATE CURRENT (A)
100 (%)
REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 106
7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2
HOLDING CURRENT VS. JUNCTION TEMPERATURE 102 7 5 4 3 2 101 7 5 4 3 2 100 -60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) VD = 12V DISTRIBUTION TYPICAL EXAMPLE
REPETITIVE PEAK OFF-STATE CURRENT (Tj = tC) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25C)
TYPICAL EXAMPLE
105
104
103
102 -60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C)
HOLDING CURRENT (mA)
LACHING CURRENT VS. JUNCTION TEMPERATURE
7 5 3 2
+ T2 , G+ TYPICAL - T2 , G- EXAMPLE
BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE
100 (%)
103
160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C)
LACHING CURRENT (mA)
102
7 5 3 2
101
7 5 3 2
100 -60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C)
BREAKOVER VOLTAGE (Tj = tC) BREAKOVER VOLTAGE (Tj = 25C)
DISTRIBUTION
+ T2 , G- TYPICAL EXAMPLE
Mar. 2002
MITSUBISHI SEMICONDUCTOR TRIAC
BCR5AS
The product guaranteed maximum junction temperature 150C (See warning.)
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
100 (%)
160 140
100 (%)
BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE (Tj = 125C) TYPICAL EXAMPLE Tj = 125C III QUADRANT 100 80 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/ s) I QUADRANT
BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE (Tj = 150C) 160 140 TYPICAL EXAMPLE Tj = 150C
BREAKOVER VOLTAGE (dv/dt = xV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s )
120
BREAKOVER VOLTAGE (dv/dt = xV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s )
120 100 80 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/ s) I QUADRANT III QUADRANT
CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/s)
7 5 3 2 101 7 5 3 2
CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/s)
COMMUTATION CHARACTERISTICS (Tj = 125C)
SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c TIME (di/dt)c TIME TIME VD
COMMUTATION CHARACTERISTICS (Tj = 150C) 7 5 3 2 101 7 5 3 2 100 70 10
SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c TIME (di/dt)c TIME TIME VD
TYPICAL EXAMPLE Tj = 125C IT = 4A = 500s VD = 200V f = 3Hz I QUADRANT
TYPICAL EXAMPLE Tj = 150C IT = 4A = 500s VD = 200V f = 3Hz
I QUADRANT III QUADRANT MINIMUM CHARACTERISTICS VALUE 23 5 7 101 23 5 7 102
MINIMUM CHARACTERISTICS VALUE III QUADRANT 23 5 7 101 23 5 7 102
100 70 10
RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms)
RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms)
GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10
100 (%)
TYPICAL EXAMPLE IRGT III
GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC)
IRGT I
IFGT I
2 3 4 5 7 101
2 3 4 5 7 102
GATE CURRENT PULSE WIDTH ( s)
Mar. 2002
MITSUBISHI SEMICONDUCTOR TRIAC
BCR5AS
The product guaranteed maximum junction temperature 150C (See warning.)
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6 6
RECOMMENDED CIRCUIT VALUES AROUND THE TRIAC
LOAD 6V V A RG 6V V A RG R1 TEST PROCEDURE 1 6 TEST PROCEDURE 2 C1 = 0.1~0.47 F R1 = 47~100 C0 = 0.1 F R0 = 100 C0 R0 C1
6V V
A RG
TEST PROCEDURE 3
Mar. 2002

▲Up To Search▲

Price & Availability of BCR5AS-12

	To Download BCR5AS-12 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .