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| Si4340DY New Product Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel-1 Channel 1 20 Channel-2 Channel 2 rDS(on) (W) 0.012 @ VGS = 10 V 0.0175 @ VGS = 4.5 V 0.010 @ VGS = 10 V 0.0115 @ VGS = 4.5 V ID (A) 9.6 7.8 13.5 12.8 FEATURES D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATIONS D DC/DC Converters - Game Stations - Notebook PC Logic SCHOTTKY PRODUCT SUMMARY VDS (V) 20 VSD (V) Diode Forward Voltage 0.53 V @ 3 A IF (A) 2.0 SO-14 D1 D1 G1 G2 S2 S2 S2 1 2 3 4 5 6 7 Top View 14 13 12 11 10 9 8 S1 S1 D2 D2 D2 D2 D2 G1 Ordering Information: Si4340DY Si4340DY-T1 (with Tape and Reel) D1 D2 G2 Schottky Diode S1 N-Channel 1 MOSFET S2 N-Channel 2 MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Channel-1 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C TA = 25_C TA = 70_C Channel-2 10 secs 20 Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State "20 Steady State "16 Unit V 9.6 7.7 40 1.8 2.0 1.28 7.3 5.8 1.04 1.14 0.73 - 55 to 150 13.5 10.8 50 2.73 3.0 1.9 9.5 7.5 1.30 1.43 0.91 W _C A Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Channel-1 Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72376 S-31857--Rev. A, 15-Sep-03 www.vishay.com t v 10 sec Steady-State Steady-State Channel-2 Typ 35 72 18 Schottky Typ 40 76 21 Symbol RthJA RthJF Typ 53 92 35 Max 62.5 110 42 Max 42 87 23 Max 48 93 25 Unit _C/W C/W 1 Si4340DY Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED). Parameter Static Gate Threshold Voltage Gate-Body Gate Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 0 V, VGS = "12 V VDS = 20 V, VGS = 0 V V Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V TJ = 85_C V V, On-State On State Drain Currentb ID( ) D(on) VDS = 5 V, VGS = 10 V V VGS = 10 V, ID = 9.6 A Drain-Source On-State Drain Source On State Resistanceb rDS( ) DS(on) VGS = 10 V, ID = 13.5 A VGS = 4.5 V, ID = 7.8 A VGS = 4.5 V, ID = 12.8 A Forward Transconductanceb Diode Forward Voltageb gf fs VSD VDS = 15 V, ID = 9.6 A VDS = 15 V, ID = 13.5 A IS = 1.8 A, VGS = 0 V IS = 2.73 A, VGS = 0 V Ch-1 Ch-2 Ch 1 Ch-1 Ch-2 Ch 1 Ch-1 Ch-2 Ch 1 Ch-1 Ch-2 Ch 1 Ch-1 Ch-2 Ch 1 Ch-1 Ch-2 Ch 1 Ch-1 Ch-2 Ch 1 Ch-1 Ch-2 Ch 1 Ch-1 Ch-2 20 30 0.0095 0.007 0.0135 0.0085 25 38 0.74 0.485 1.1 0.53 0.012 0.010 0.0175 0.0115 S V W 0.8 0.8 2.00 1.90 100 100 1 100 15 4000 A mA V nA Symbol Test Condition Min Typa Max Unit Dynamica Total Gate Charge Gate-Source Gate Source Charge Gate-Drain Gate Drain Charge Gate Resistance Turn-On Turn On Delay Time Rise Time Turn-Off Turn Off Delay Time Fall Time Source-Drain Source Drain Reverse Recovery Time Qg Qgs Qgd d Rg td( ) d(on) tr td( ff) d(off) tf trr IF = 1.8 A, di/dt = 100 A/ms IF = 2.73 A, di/dt = 100 mA/ms Channel-1 Channel 1 VDD = 01 V, RL = 10 W ID ^ 1 A, VGEN = 10 V, RG = 6 W Channel-2 VDD = 01 V, RL = 15 W ID ^ 1 A VGEN = 10 V RG = 6 W A, V, Ch-1 Channel 1 Channel-1 VDS = 10 V, VGS = 4.5 V, ID = 9.6 A Channel 2 Channel-2 VDS = 10 V, VGS = 4.5 V, ID = - 13.5 A Ch-2 Ch 1 Ch-1 Ch-2 Ch 1 Ch-1 Ch-2 f = 1 MHz Ch 1 Ch-1 Ch-2 Ch 1 Ch-1 Ch-2 Ch 1 Ch-1 Ch-2 Ch 1 Ch-1 Ch-2 Ch 1 Ch-1 Ch-2 Ch 1 Ch-1 Ch-2 0.45 0.7 10 17 3.3 4.5 3.1 4.5 0.9 1.4 15 24 16 22 42 68 16 19 35 38 1.35 2.1 25 35 25 35 65 100 25 30 60 65 ns W 15 25 nC Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Forward Voltage Drop Symbol VF Test Condition IF = 3 A IF = 3 A, TJ = 125_C Vr = 20 V Vr = 20 V, TJ = 75_C Vr = - 20 V, TJ = 125_C Vr = 15 V Min Typ 0.485 0.42 0.008 0.4 6.5 102 Max 0.53 0.42 0.100 5 20 Unit V Maximum Reverse Leakage Current Junction Capacitance www.vishay.com Irm CT mA pF 2 Document Number: 72376 S-31857--Rev. A, 15-Sep-03 Si4340DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 10 thru 4 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 50 Vishay Siliconix CHANNEL-1 Transfer Characteristics 30 30 20 3V 20 TC = 125_C 10 25_C - 55_C 10 2V 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.020 r DS(on) - On-Resistance ( W ) 1800 1500 VGS = 4.5 V 0.012 VGS = 10 V 0.008 C - Capacitance (pF) 1200 900 600 300 0 0 10 20 30 40 50 0 4 Crss Capacitance 0.016 Ciss Coss 0.004 0.000 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 6 V GS - Gate-to-Source Voltage (V) 5 4 3 2 1 0 0.0 VDS = 10 V ID = 9.6 A 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 9.6 A 1.4 r DS(on) - On-Resistance (W) (Normalized) 5.2 7.8 10.4 13.0 1.2 1.0 0.8 2.6 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) Document Number: 72376 S-31857--Rev. A, 15-Sep-03 TJ - Junction Temperature (_C) www.vishay.com 3 Si4340DY Vishay Siliconix New Product CHANNEL-1 On-Resistance vs. Gate-to-Source Voltage 0.040 TJ = 150_C I S - Source Current (A) 0.035 r DS(on) - On-Resistance ( W ) ID = 9.6A 0.030 0.025 0.020 0.015 0.010 0.005 1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 50 10 TJ = 25_C Threshold Voltage 0.4 0.2 V GS(th) Variance (V) ID = 250 mA - 0.0 - 0.2 - 0.4 - 0.6 - 0.8 - 50 40 Power (W) 120 200 Single Pulse Power 160 80 0 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C) 100 Safe Operating Area, Junction-to-Case Limited by rDS(on) 10 1 ms 10 ms 100 ms 1s 1 0.1 TC = 25_C Single Pulse 10 s dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) www.vishay.com 4 Document Number: 72376 S-31857--Rev. A, 15-Sep-03 Si4340DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Vishay Siliconix CHANNEL-1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 92_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72376 S-31857--Rev. A, 15-Sep-03 www.vishay.com 5 Si4340DY Vishay Siliconix Output Characteristics 50 VGS = 10 thru 3 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 50 New Product CHANNEL-2 Transfer Characteristics TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 30 30 20 20 TC = 125_C 10 25_C - 55_C 10 2V 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.015 r DS(on) - On-Resistance ( W ) 3000 2500 VGS = 4.5 V 0.009 VGS = 10 V 0.006 C - Capacitance (pF) 2000 1500 1000 500 0 0 10 20 30 40 50 0 4 Crss Capacitance 0.012 Ciss Coss 0.003 0.000 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 6 V GS - Gate-to-Source Voltage (V) 5 4 3 2 1 0 0 5 10 15 20 25 Qg - Total Gate Charge (nC) www.vishay.com VDS = 10 V ID = 13.5 A 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 - 50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 13.5 A r DS(on) - On-Resistance (W) (Normalized) - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Document Number: 72376 S-31857--Rev. A, 15-Sep-03 6 Si4340DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 60 TJ = 150_C I S - Source Current (A) 0.030 Vishay Siliconix CHANNEL-2 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) 0.024 10 0.018 ID = 13.5 A 0.012 TJ = 25_C 0.006 1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Reverse Current vs. Junction Temperature 100 10 1 VDS = 20 V 0.1 VDS = 16 V Power (W) 200 Single Pulse Power I R - Reverse Current (mA) 160 120 80 0.01 40 0.001 0.0001 0 25 50 75 100 125 150 TJ - temperature (_C) 0 0.001 0.01 0.1 Time (sec) 1 10 100 Safe Operating Area, Junction-to-Case Limited by rDS(on) 10 1 ms 10 ms 100 ms 1s 0.1 TC = 25_C Single Pulse 10 s dc 1 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Document Number: 72376 S-31857--Rev. A, 15-Sep-03 www.vishay.com 7 Si4340DY Vishay Siliconix New Product CHANNEL-2 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2 1 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 92_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 2 1 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Reverse Current vs. Junction Temperature 100 10 I R - Reverse Current (mA) I F - Forward Current (A) 1 TJ = 150_C 1 5 SCHOTTKY Forward Voltage Drop 0.1 30 V 20 V 0.01 TJ = 25_C 0.001 0.0001 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 0.1 0 0.2 0.4 0.6 0.8 VF - Forward Voltage Drop (V) Document Number: 72376 S-31857--Rev. A, 15-Sep-03 8 Si4340DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 500 Vishay Siliconix SCHOTTKY Capacitance C T - Junction Capacitance (pF) 400 300 200 100 0 0 6 12 18 24 30 VKA - Reverse Voltage (V 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Normalized Thermal Transient Impedance, Junction-to-Ambient Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 100_C/W 3. TJM - TA = PDMZthJA(t) t1 t2 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 4. Surface Mounted 10 100 600 Square Wave Pulse Duration (sec) 2 1 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72376 S-31857--Rev. A, 15-Sep-03 www.vishay.com 9 |
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