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BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682 Plastic Medium-Power Silicon PNP Darlingtons
...for use as output devices in complementary general-purpose amplifier applications.
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* High DC Current Gain - * * *
hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc Monolithic Construction BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD675, 675A, 677, 677A, 679, 679A, 681 BD 678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703
4.0 AMPERE DARLINGTON POWER TRANSISTORS PNP SILICON 45, 60, 80, 100 VOLTS 40 WATTS
MAXIMUM RATINGS
Rating Collector-Emitter Voltage BD676, BD676A BD678, BD678A BD680, BD680A BD682 Collector-Base Voltage BD676, BD676A BD678, BD678A BD680, BD680A BD682 Emitter-Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO 45 60 80 100 VCB 45 60 80 100 VEB IC IB PD 40 0.32 TJ, Tstg -55 to +150 W W/C C Y WW BD6xxx xxx = Year = Work Week = Specific Device Code = 76, 76A, 78, 78A, 80, 80A or 82 5.0 4.0 0.1 Vdc Adc Adc YWW BD6xxx Vdc 32 1 Value Unit Vdc
STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE
TO-225AA CASE 77 STYLE 1
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance - Junction to Case Symbol RJC Max 3.13 Unit C/W
ORDERING INFORMATION
Device BD676 BD676A BD678 BD678A BD680 BD680A BD682 Package TO-225AA TO-225AA TO-225AA TO-225AA TO-225AA TO-225AA TO-225AA Shipping 500 Units/Box 500 Units/Box 500 Units/Box 500 Units/Box 500 Units/Box 500 Units/Box 500 Units/Box
(c) Semiconductor Components Industries, LLC, 2002
April, 2002 - Rev. 10
Publication Order Number: BD676/D
BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682
PD, POWER DISSIPATION (WATTS)
II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Symbol Min Max Unit Collector-Emitter Breakdown Voltage (Note 1) (IC = 50 mAdc, IB = 0) BD676, 676A BD678, 678A BD680, 680A BD682 BVCEO 45 60 80 100 - - - - - - - - Vdc Collector Cutoff Current (VCE = Half Rated VCEO, IB = 0) Collector Cutoff Current (VCB = Rated BVCEO, IE = 0) (VCB = Rated BVCEO. IE = 0, TC = 100C) ICEO ICBO 500 0.2 2.0 2.0 Adc mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO mAdc ON CHARACTERISTICS DC Current Gain (Note 1) (IC = 1.5 Adc, VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3.0 Vdc) hFE BD676, 678, 680, 682 BD676A, 678A, 680A BD678, 680, 682 BD676A, 678A, 680A 750 750 - - - - - - Collector-Emitter Saturation Voltage (Note 1) (IC = 1.5 Adc, IB = 30 mAdc) (IC = 2.0 Adc, IB = 40 mAdc) Base-Emitter On Voltage (Note 1) (IC = 1.5 Adc, VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3.0 Vdc) VCE(sat) VBE(on) 2.5 2.8 2.5 2.5 Vdc Vdc BD678, 680, 682 BD676A, 678A, 680A DYNAMIC CHARACTERISTICS Small-Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 s, Duty Cycle v 2.0%. hfe 1.0 - - 50 45 40 35 30 25 20 15 10 5.0 0 15 30 45 60 75 90 105 120 135 150 165 TC, CASE TEMPERATURE (C)
Figure 1. Power Temperature Derating
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BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682
5.0 IC, COLLECTOR CURRENT (AMP) 2.0 1.0 0.5 BONDING WIRE LIMIT THERMAL LIMIT at TC = 25C SECONDARY BREAKDOWN LIMIT BD676, 676A BD678, 678A BD680, 680A BD682 100
0.2 0.1 TC = 25C
There are two limitations on the power handling ability of a transistor average junction temperature and secondary breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; e.g., the transistor must not be subjected to greater dissipation than the curves indicate. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown.
0.05 1.0
2.0 5.0 10 50 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. DC Safe Operating Area
PNP BD676, 676A BD678, 678A BD680, 680A BD682 BASE [ 8.0 k
COLLECTOR
[ 120
EMITTER
Figure 3. Darlington Circuit Schematic
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BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682
PACKAGE DIMENSIONS
TO-126 TO-225AA CASE 77-09 ISSUE W
-B- U Q -A-
123
F M
C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 ---
H
K
V G S D 2 PL 0.25 (0.010)
M
J R 0.25 (0.010) A
M
A
M
M
B
M
B
M
STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
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BD676/D

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