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| Ordering number : EN5863A DL-3147-141(-241) Red Laser Diode DL-3147-141(-241) Index Guided AlGaInP Laser Diode Overview DL-3147-141(-241) is index guided 645 nm (Typ.) AlGaInP laser diode with low threshold current and high operating temperature. The low threshold current and high operating temperature are achieved by a strained multiple quantum well active layer. DL-3147-141(-241) is suitable for applications such as bar-code scanners, optical disc systems and other optical information systems. Package Dimensions 0 o5.6 - 0.025 o4.4 o3.550.1 o1.6 Effective window diameter 1.0min. Tolerance : 0.2 Unit : mm 1 2 3 Top view 0.40.1 1.20.1 1 Features * Short wavelength : 645 nm (Typ.) * Low threshold current : Ith = 45 mA (Typ.) * High operating temperature : 5 mW at 60C * TE mode 1.270.08 0.25 1.00.1 LD facet 3.50.5 6.51.0 0.5max. o1.4max. Absolute Maximum Ratings at Tc=25C Parameter Light Output Reverse Voltage Laser PIN Operating Temperature Storage Temperature Topr Tstg Symbol Po VR Ratings 7 2 30 -- to +60 -10 --40 to +85 C C 2 LD 3-o0.450.1 Unit mW V 1 Pin No. 1 2 3 o2.0 5.6mm o stem Electrical Connection 3 3 PD LD PD 2 2 power supply system + power supply system -141 -241 Electrical and Optical Characteristics at Tc=25C Parameter Threshold Current Operating Current Operating Voltage Lasing Wavelength Beam i) Perpendicular Divergence Parallel Off Axis Perpendicular Angle Parallel Differential Efficiency Monitoring Output Current Astigmatism i) Full angle at half maximum Symbol Ith Iop Vop p // // dPo/dIop Im As Condition CW Po=5mW Po=5mW Po=5mW Po=5mW Po=5mW ---Po=5mW Po=5mW Min. ----25 6 --0.15 0.05 --Typ. 45 60 2.2 645 30 7.5 --0.35 0.15 8 Max. 65 80 2.5 655 40 10 3 2 Unit mA mA V nm deg. deg. deg. deg. mW/mA mA mm note : The above product specifications are subject to change without notice. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N2798 GI / N2897 GI, (IM) No.5863 1/3 DL-3147-141(-241) Characteristics Output power vs. Forward current Threshold current Ith (mA) 6 100 80 60 40 Threshold current vs. Temperature Output power Po (mW) 25C 50C 60C 5 4 3 2 1 0 0 50 100 150 20 10 0 10 20 30 40 50 60 Forward current IF (mA) Temperature Tc (C) Monitor current vs. Output power 0.5 1.0 Beam divergence Po=5mW Tc=25C Monitor current Im (mA) 0.3 0.2 0.1 0 0 1 2 3 4 5 Output power Po (mW) Relative intensity 0.4 Tc=25C Vr(PD)=5V 0.8 0.6 0.4 0.2 0 // -40 -30 -20 -10 0 10 20 30 40 Angle (deg.) Lasing wavelength vs. Temperature 655 Output power vs. Lasing wavelength Lasing wavelength p (nm) Po=5mW Po=5mW 650 Tc=25C Relative intensity Po=3mW 645 Po=1mW 640 0 10 20 30 40 50 60 639 641 643 645 647 649 Temperature Tc (C) Lasing wavelength p (nm) No.5863 2/3 DL-3147-141(-241) CAUTION 1. No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster / crime-prevention equipment or the like, and the failure of which may directly or indirectly cause injury, death or property loss. 2. Anyone purchasing any products described or contained herein for an above-mentioned use shall: 1) Accept full responsibility and indemnify and defend SANYO ELECTRIC CO.,LTD., it's affiliates, subsidiaries and distributors or any of their officers and employees, jointly and severally, against any and all claims and litigation and all damages, costs and expenses associated with such use. 2) Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., it's affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. 3. Information (including circuit diagrams and circuit parameters) disclosed herein is for example only; it is not guaranteed for mass production, SANYO believes the information disclosed herein is accurate and reliable, but no guarantees are made or implied regarding it's use or any infringements of intellectual property rights or other rights of third parties. Precautionary instructions in handling gallium arsenic products Special precautions must be taken in handling this product because it contains, gallium arsenic, which is designated as a toxic substance by law. Be sure to adhere strictly to all applicable laws and regulations enacted for this substance, particularly when it comes to disposal. Manufactured by ; Tottori SANYO Electric Co., Ltd. Electronics Device Bussiness Headquaters LED Division 5-318, Tachikawa-cho, Tottori City, 680-8634 Japan TEL: +81-857-21-2137 FAX: +81-857-21-2161 No.5863 3/3 |
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