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APTGF75DA120T1G
Boost chopper NPT IGBT Power Module
5 6 11
VCES = 1200V IC = 75A @ Tc = 80C
Application * * * AC and DC motor control Switched Mode Power Supplies Power Factor Correction
CR1
3 4 Q2 CR2 9 10 1 2 12
Features
NTC
*
* * * Benefits * * * * * *
Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Very low stray inductance Internal thermistor for temperature monitoring High level of integration
Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25C Tc = 80C Tc = 25C Tc = 25C Tj = 150C Max ratings 1200 100 75 150 20 500 150A @ 1200V Unit V
August, 2007 1-5 APTGF75DA120T1G - Rev 0
A V W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGF75DA120T1G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions Tj = 25C VGE = 0V VCE = 1200V Tj = 125C Tj = 25C VGE =15V IC = 75A Tj = 125C VGE = VCE, IC = 2.5 mA VGE = 20V, VCE = 0V Min Typ Max 250 500 3.7 6.5 500 Unit A V V nA
3.2 3.9 4.5
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 75A RG = 7.5 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 75A RG = 7.5 VGE = 15V Tj = 125C VBus = 600V IC = 75A Tj = 125C RG = 7.5 Test Conditions Tj = 25C Tj = 125C Tc = 70C IF = 60A VF Diode Forward Voltage IF = 120A IF = 60A trr Qrr Reverse Recovery Time Reverse Recovery Charge IF = 100A VR = 800V di/dt =200A/s Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C 60 2.5 3 1.8 265 350 560 2890 ns nC
August, 2007 2-5 APTGF75DA120T1G - Rev 0
Min
Typ 5.1 0.7 0.4 120 50 310 20 130 60 360 30 9
Max
Unit nF
ns
ns
mJ 4
Chopper diode ratings and characteristics
Symbol Characteristic VRRM IRM IF
Maximum Peak Repetitive Reverse Voltage
Min 1200
Typ
Max 100 500 3
Unit V A A V
Maximum Reverse Leakage Current DC Forward Current
VR=1200V
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APTGF75DA120T1G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.25 0.9 150 125 100 4.7 80 Unit
C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
V C N.m g
To heatsink
M4
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K
RT = R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
Min
Typ 50 3952
Max
Unit k K
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
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3-5
APTGF75DA120T1G - Rev 0
August, 2007
APTGF75DA120T1G
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics 150 125 100 IC (A)
VGE=12V TJ = 125C VGE=20V VGE=15V
150 125
IC (A)
TJ=25C
100 75 50 25 0 0 1 2 3 VCE (V) 4 5 6
TJ=125C
75 50 25 0 0 1 2 3 4 VCE (V) 5 6
VGE=9V
150 125 100
Transfert Characteristics 28 24 20 E (mJ)
TJ=125C
Energy losses vs Collector Current
VCE = 600V VGE = 15V RG = 7.5 TJ = 125C
Eon
IC (A)
75 50 25 0 5 6 7
16 12 8
TJ=25C
4 0 0 25 50 75 IC (A) 100
Eoff
8
9
10
11
12
125
150
VGE (V) Switching Energy Losses vs Gate Resistance 35 30 25 E (mJ) 20 15 10 5 0 0 10 20 30 40 50 Gate Resistance (ohms) 60 70
Eoff VCE = 600V VGE =15V IC = 75A TJ = 125C
Reverse Bias Safe Operating Area 175 150
Eon
125 IC (A) 100 75 50 25 0 0 300 600 900 1200 1500 VCE (V)
VGE=15V TJ=125C RG=7.5
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.3 Thermal Impedance (C/W) 0.25 0.2 0.15 0.1 0.05 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10
IGBT
0 0.00001
rectangular Pulse Duration (Seconds)
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4-5
APTGF75DA120T1G - Rev 0
August, 2007
APTGF75DA120T1G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 100 80 60
ZCS ZVS VCE=600V D=50% RG=7.5 TJ=125C TC=75C
Forward Characteristic of diode 150 125 100 IF (A) 75 50 25 0
TJ=25C TJ=125C
40 20 0 0
hard switching
20
40 60 IC (A)
80
100
0
0.5
1
1.5 2 VF (V)
2.5
3
3.5
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1 Thermal Impedance (C/W) 0.8 0.6 0.5 0.4 0.2 0.3 0.1 0.05 0 0.00001 0.0001 0.001 Single Pulse 0.9 0.7
Diode
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTGF75DA120T1G - Rev 0
August, 2007

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