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Freescale Semiconductor Technical Data
Document Number: MRF8P23080H Rev. 1, 11/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies from 2300 to 2620 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. * Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQA = 280 mA, VGSB = 0.7 Vdc, Pout = 16 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency 2300 MHz 2350 MHz 2400 MHz Gps (dB) 14.6 14.7 14.6 D (%) 42.0 41.6 41.4 Output PAR (dB) 6.7 6.8 6.6 ACPR (dBc) --29.5 --31.5 --32.5
MRF8P23080HR3 MRF8P23080HSR3
2300-2400 MHz, 16 W AVG., 28 V W-CDMA, LTE LATERAL N-CHANNEL RF POWER MOSFETs
* Capable of Handling 10:1 VSWR, @ 32 Vdc, 2350 MHz, 90 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) * Typical Pout @ 3 dB Compression Point 100 Watts CW Features * Production Tested in a Symmetrical Doherty Configuration * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * Greater Negative Gate--Source Voltage Range for Improved Class C Operation * Designed for Digital Predistortion Error Correction Systems * RoHS Compliant * NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. * NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.
CASE 465M-01, STYLE 1 NI-780-4 MRF8P23080HR3
CASE 465H-02, STYLE 1 NI-780S-4 MRF8P23080HSR3
RFinA/VGSA 3
1 RFoutA/VDSA
RFinB/VGSB 4
2 RFoutB/VDSB
(Top View)
Figure 1. Pin Connections Table 1. Maximum Ratings
Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature CW Operation @ TC = 25C Derate above 25C
(1,2)
Symbol VDSS VGS VDD Tstg TC TJ CW
Value --0.5, +65 --6.0, +10 32, +0 --65 to +150 150 225 168 2.39
Unit Vdc Vdc Vdc C C C W W/C
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
(c) Freescale Semiconductor, Inc., 2010. All rights reserved.
MRF8P23080HR3 MRF8P23080HSR3 1
RF Device Data Freescale Semiconductor
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 72C, 16 W CW, 28 Vdc, IDQA = 280 mA, VGSB = 0.7 V, 2300 MHz Case Temperature 80C, 80 W CW(3), 28 Vdc, IDQA = 280 mA, VGSB = 0.7 V, 2300 MHz Symbol RJC Value (1,2) 0.89 0.55 Unit C/W
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 2 (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic Off Characteristics
(4)
Symbol IDSS IDSS IGSS
Min -- -- --
Typ -- -- --
Max 10 1 1
Unit
Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics (4) Gate Threshold Voltage (VDS = 10 Vdc, ID = 75 Adc) Gate Quiescent Voltage (VDD = 28 Vdc, IDA = 280 mAdc, Measured in Functional Test) Drain--Source On--Voltage (VGS = 10 Vdc, ID = 0.75 Adc)
Adc Adc Adc
VGS(th) VGS(Q) VDS(on)
1.0 1.9 0.1
1.8 2.6 0.23
2.5 3.4 0.3
Vdc Vdc Vdc
Functional Tests (5,6) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 280 mA, VGSB = 0.7 Vdc, Pout = 16 W Avg., f = 2300 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured on 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Drain Efficiency Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio
(6) (In
Gps D PAR ACPR
13.5 38.0 6.0 --
14.6 42.0 6.7 --29.5
18.5 -- -- --27.0
dB % dB dBc
Typical Broadband Performance Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 280 mA, VGSB = 0.7 Vdc, Pout = 16 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Frequency 2300 MHz 2350 MHz 2400 MHz Gps (dB) 14.6 14.7 14.6 D (%) 42.0 41.6 41.4 Output PAR (dB) 6.7 6.8 6.6 ACPR (dBc) --29.5 --31.5 --32.5
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. 4. Each side of device measured separately. 5. Part internally matched both on input and output. 6. Measurement made with device in a Symmetrical Doherty configuration (continued)
MRF8P23080HR3 MRF8P23080HSR3 2 RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit Typical Performances (1) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 280 mA, VGSB = 0.7 Vdc, 2300--2400 MHz Bandwidth Pout @ 1 dB Compression Point, CW Pout @ 3 dB Compression Point, CW IMD Symmetry @ 20 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 100 MHz Bandwidth @ Pout = 16 W Avg. Gain Variation over Temperature (--30C to +85C) Output Power Variation over Temperature (--30C to +85C) (2) P1dB P3dB IMDsym -- -- -- 55 100 30 -- -- -- W W MHz
VBWres GF G P1dB
-- -- -- --
55 0.1 0.013 0.005
-- -- -- --
MHz dB dB/C dB/C
1. Measurement made with device in a Symmetrical Doherty configuration. 2. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
MRF8P23080HR3 MRF8P23080HSR3 RF Device Data Freescale Semiconductor 3
C6 VGA
C5 C C4
C18 C15 C17 VDA C16
C2 Z1 C8 C3 C9
CUT OUT AREA
C1
C13 C14 C20 C19
C7
R1
MRF8P23080H Rev. 1
C10 VGB C12 C11 P C21 C23 C24
C22 VDB
Figure 2. MRF8P23080HR3(HSR3) Test Circuit Component Layout
Table 5. MRF8P23080HR3(HSR3) Test Circuit Component Designations and Values
Part C1, C7 C2, C8, C13, C19 C3, C9 C4, C5, C10, C11 C6, C12, C16, C22 C14, C20 C15, C21 C17, C23 C18, C24 R1 Z1 PCB Description 0.8 pF Chip Capacitors 1.0 pF Chip Capacitors 18 pF Chip Capacitors 8.2 pF Chip Capacitors 1.0 F, 50 V Chip Capacitors 10 pF Chip Capacitors 5.6 pF Chip Capacitors 10 F, 50 V Chip Capacitors 470 F, 63 V Electrolytic Capacitors 50 , 1/4 W Chip Resistor 2500 MHz Band 90, 3 dB Chip Hybrid Coupler 0.020, r = 3.5 Part Number ATC600F0R8JT250XT ATC600F1R0JT250XT ATC600F180JT250XT ATC600F8R2JT250XT GRM21BR71H105KA12L ATC600F100JT250XT ATC600F5R6JT250XT GRM55DR61H106KA88L MCGPR63V477M13X26--RH CRCW120650R0FKEA GSC356--HYB2500 RO4350B Manufacturer ATC ATC ATC ATC Murata ATC ATC Murata Multicomp Vishay Soshin Rogers
MRF8P23080HR3 MRF8P23080HSR3 4 RF Device Data Freescale Semiconductor
Single--ended

4 4
Quadrature combined
4
Doherty
2
2
Push--pull
Figure 3. Possible Circuit Topologies
MRF8P23080HR3 MRF8P23080HSR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
14.9 14.8 Gps, POWER GAIN (dB) 14.7 14.6 14.5 14.4 14.3 14.2 14.1 14 2290 2305 2320 2335 2350 2365 2380 2395 Gps 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF ACPR PARC VDD = 28 Vdc, Pout = 16 W (Avg.), IDQA = 280 mA VGSB = 0.7 Vdc, Single--Carrier W--CDMA 43 42 41 40 --26 --28 ACPR (dBc) --30 --32 --34 --36 2410 D, DRAIN EFFICIENCY (%) 0 --0.5 --1 --1.5 --2 --2.5 PARC (dB) --22 --24 --26 --28 --30 --32 --34 ACPR (dBc) D, DRAIN EFFICIENCY (%) 15 D 44
f, FREQUENCY (MHz)
Figure 4. Output Peak- -Average Ratio Compression (PARC) -toBroadband Performance @ Pout = 16 Watts Avg.
--20 --30 --40 --50 --60 --70
IMD, INTERMODULATION DISTORTION (dBc)
VDD = 28 Vdc, Pout = 20 W (PEP) IDQA = 280 mA, VGSB = 0.7 Vdc
IM3--U IM3--L
Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 2350 MHz IM5--U IM5--L IM7--U IM7--L 1 10
100
TWO--TONE SPACING (MHz)
Figure 5. Intermodulation Distortion Products versus Two-Tone Spacing
17 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 16 Gps, POWER GAIN (dB) 15 14 13 12 11 1 0 --1 --2 --3 --4 --5 --1 dB = 18.6 W --2 dB = 27.5 W --3 dB = 37.5 W PARC 10 20 30 40 50 60 Gps 60 55 50 45 40 35 30
VDD = 28 Vdc, IDQA = 280 mA, VGSB = 0.7 Vdc, f = 2350 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF D ACPR
Pout, OUTPUT POWER (WATTS)
Figure 6. Output Peak- -Average Ratio -toCompression (PARC) versus Output Power
MRF8P23080HR3 MRF8P23080HSR3 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
15 14 Gps, POWER GAIN (dB) 13 12 2350 MHz 11 10 9 1 2400 MHz VDD = 28 Vdc, IDQA = 280 mA, VGSB = 0.7 Vdc Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 10 Pout, OUTPUT POWER (WATTS) AVG. 20 10 0 100 2350 MHz 2300 MHz 2300 MHz 2400 MHz Gps D ACPR 60 50 D, DRAIN EFFICIENCY (%) 40 30 0 --10 --20 --30 --40 --50 --60 ACPR (dBc) +ACPR in 3.84 MHz Integrated BW 1.8 3.6
Figure 7. Single-Carrier W-CDMA Power Gain, Drain Efficiency and ACPR versus Output Power
18 15 12 GAIN (dB) 9 6 3 0 2050 VDD = 28 Vdc Pin = 0 dBm IDQA = 280 mA VGSB = 0.7 Vdc 2125 2200 2275 2350 2425 2500 2575 2650
Gain
f, FREQUENCY (MHz)
Figure 8. Broadband Frequency Response
W-CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 Input Signal 0.1 (dB) 0.01 0.001 0.0001 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0 1 2 3 4 5 6 7 8 9 10 PEAK--TO--AVERAGE (dB) 10 0 --10 --20 --30 --40 --50 --60 --70 --80 --90 --100 --9 --7.2 --5.4 --3.6 --1.8 0 5.4 7.2 9 f, FREQUENCY (MHz) --ACPR in 3.84 MHz Integrated BW 3.84 MHz Channel BW
Figure 9. CCDF W-CDMA IQ Magnitude Clipping, Single-Carrier Test Signal
Figure 10. Single-Carrier W-CDMA Spectrum MRF8P23080HR3 MRF8P23080HSR3 RF Device Data Freescale Semiconductor 7
VDD = 28 Vdc, IDQA = 280 mA f MHz 2300 2350 2400 Max Pout (1) Watts 58 55 55 dBm 47.6 47.4 47.4 Zsource 8.42 -- j14.3 11.4 -- j13.4 17.7 -- j9.34 Zload 3.51 -- j5.02 3.75 -- j5.03 3.14 -- j5.63
(1) Maximum output power measurement reflects pulsed 1 dB gain compression. Zsource = Test circuit impedance as measured from gate contact to ground. Zload = Test circuit impedance as measured from drain contact to ground. Input Load Pull Tuner Device Under Test Output Load Pull Tuner
Z
source
Z
load
Figure 11. Carrier Side Load Pull Performance -- Maximum P1dB Tuning
VDD = 28 Vdc, IDQA = 280 mA f MHz 2300 2350 2400 Max Eff. (1) % 60.9 60.1 60.0 Zsource 8.41 -- j14.3 11.4 -- j13.4 17.7 -- j9.35 Zload 7.02 -- j3.44 6.84 -- j2.41 6.53 -- j2.92
(1) Maximum efficiency measurement reflects pulsed 1 dB gain compression. Zsource = Test circuit impedance as measured from gate contact to ground. Zload = Test circuit impedance as measured from drain contact to ground. Input Load Pull Tuner Device Under Test Output Load Pull Tuner
Z
source
Z
load
Figure 12. Carrier Side Load Pull Performance -- Maximum Efficiency Tuning
MRF8P23080HR3 MRF8P23080HSR3 8 RF Device Data Freescale Semiconductor
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQA = 280 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Ideal
54.5 53 Pout, OUTPUT POWER (dBm) 51.5 50 48.5 47 45.5 44 42.5 41 39.5 38 21 22.5
Actual 2400 MHz 2350 MHz 2300 MHz
2350 MHz 2400 MHz 2300 MHz
24 25.5
27
28.5
30
31.5
33
34.5
36
37.5
Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V f (MHz) 2300 2350 2400 P1dB Watts 59 58 54 dBm 47.7 47.6 47.3 69 68 68 P3dB Watts dBm 48.4 48.3 48.3
Test Impedances per Compression Level f (MHz) 2300 2350 2400 P1dB P1dB P1dB Zsource 8.40 -- j14.3 11.4 -- j13.4 17.7 -- j9.30 Zload 3.60 -- j5.30 3.70 -- j5.20 3.10 -- j5.10
Figure 11. Pulsed CW Output Power versus Input Power @ 28 V
NOTE: Measurement made on the Class AB, carrier side of the device.
MRF8P23080HR3 MRF8P23080HSR3 RF Device Data Freescale Semiconductor 9
PACKAGE DIMENSIONS
MRF8P23080HR3 MRF8P23080HSR3 10 RF Device Data Freescale Semiconductor
MRF8P23080HR3 MRF8P23080HSR3 RF Device Data Freescale Semiconductor 11
MRF8P23080HR3 MRF8P23080HSR3 12 RF Device Data Freescale Semiconductor
MRF8P23080HR3 MRF8P23080HSR3 RF Device Data Freescale Semiconductor 13
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices Software * Electromigration MTTF Calculator * RF High Power Model * .s2p File For Software, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 1 Date May 2010 Nov. 2010 * Initial Release of Data Sheet * Updated frequency in overview paragraph from "2300 to 2400 MHz" to "2300 to 2620 MHz" to show the broadband performance of the part, p. 1 * In Table 2, Thermal Characteristics, Pout = 16 W CW thermal resistance value changed from 0.91 to 0.89_C/W and Pout = 80 W CW thermal resistance value changed from 0.91 to 0.55_C/W. Thermal values now reflect the use of the combined dissipated power from the carrier amplifier and peaking amplifier, p. 2. * Broadband IRL data removed from Fig. 4, Output Peak--to--Average Ratio Compression (PARC) Broadband Performance and Fig. 8, Broadband Frequency Response graphs. Data not valid indicator of product performance due to circuit implementation, p. 6, 7. Description
MRF8P23080HR3 MRF8P23080HSR3 14 RF Device Data Freescale Semiconductor
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MRF8P23080HR3 MRF8P23080HSR3
Document Number: RF Device Data MRF8P23080H Rev. 1, 11/2010 Freescale Semiconductor
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