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| www..com MITSUBISHI HVIGBT MODULES CM400HB-90H HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM400HB-90H q IC...................................................................400A q VCES ....................................................... 4500V q Insulated Type q 1-element in a pack APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130 114 570.25 570.25 4 - M8 NUTS C 20 C C C C 124 0.25 G E E E CM C E E E G 140 40 CIRCUIT DIAGRAM 3 - M4 NUTS 10.35 10.65 48.8 6 - 7MOUNTING HOLES 61.5 18 5.2 15 40 38 LABEL HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) 29.5 28 5 Mar. 2003 MITSUBISHI HVIGBT MODULES CM400HB-90H 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25C) Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso -- -- Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass VGE = 0V VCE = 0V DC, TC = 85C Pulse Pulse TC = 25C, IGBT part Conditions Ratings 4500 20 400 800 400 800 4700 -40 ~ +125 -40 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 Unit V V A A A A W C C V N*m N*m N*m kg (Note 1) (Note 1) -- -- Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25C) Symbol ICES Item Conditions VCE = VCES, VGE = 0V IC = 40mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25C IC = 400A, VGE = 15V Tj = 125C VCE = 10V VGE = 0V VCC = 2250V, IC = 400A, VGE = 15V VCC = 2250V, IC = 400A VGE1 = VGE2 = 15V RG = 22.5 Resistive load switching operation IE = 400A, VGE = 0V IE = 400A, die / dt = -800A / s Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied Min -- 4.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Limits Typ -- 6.0 -- 3.00 3.30 72 5.3 1.6 3.6 -- -- -- -- 4.00 -- 160 -- -- 0.015 Max 8 7.5 0.5 3.90 -- -- -- -- -- 2.40 2.40 6.00 1.20 5.20 1.80 -- 0.021 0.042 -- Unit mA V A V nF nF nF C s s s s V s C K/W K/W K/W Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-leakage current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Total gate charge QG td (on) Turn-on delay time tr Turn-on rise time td (off) Turn-off delay time tf Turn-off fall time VEC(Note 2) Emitter-collector voltage trr (Note 2) Reverse recovery time Qrr (Note 2) Reverse recovery charge Rth(j-c)Q Thermal resistance Rth(j-c)R Rth(c-f) Contact thermal resistance Note 1. 2. 3. 4. (Note 4) (Note 1) Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Junction temperature (Tj) should not increase beyond 125C. Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Mar. 2003 MITSUBISHI HVIGBT MODULES CM400HB-90H 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 800 Tj=25C COLLECTOR CURRENT IC (A) TRANSFER CHARACTERISTICS (TYPICAL) 7000 VCE=10V Tj = 25C Tj = 125C VGE=12V VGE=10V COLLECTOR CURRENT IC (A) 6000 5000 4000 3000 2000 1000 0 0 4 8 12 600 VGE=20V VGE=15V VGE=14V 400 200 VGE=8V 0 0 2 4 6 8 10 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 8 VGE=15V 10 Tj = 25C 8 6 6 IC=800A 4 IC=400A 4 2 Tj = 25C Tj = 125C 0 0 200 400 600 800 2 IC=200A 0 4 8 12 16 20 0 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 8 CAPACITANCE Cies, Coes, Cres (nF) CAPACITANCE CHARACTERISTICS (TYPICAL) 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 VGE = 15V, Tj = 25C Cies, Coes : f = 100kHz : f = 1MHz Cres Cies 6 4 2 Tj = 25C Tj = 125C 0 0 200 400 600 800 Coes Cres 100 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER CURRENT IE (A) Mar. 2003 MITSUBISHI HVIGBT MODULES CM400HB-90H 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY TIME trr (s) 101 7 5 3 2 100 7 5 3 2 10-1 5 7 102 SWITCHING TIMES (s) 104 VCC = 2250V, Tj = 125C 7 Inductive load 5 IGBT drive conditions VGE = 15V, RG = 22.5 3 2 trr 103 7 5 3 2 23 5 7 103 23 5 102 Irr 10-1 7 5 5 7 102 23 5 7 103 23 5 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) SWITCHING ENERGY (J/P) SWITCHING ENERGY (J/P) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 5.0 VCC = 2250V, VGE = 15V, RG = 22.5, Tj = 125C, 4.0 Inductive load Eon HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 3.0 2.5 2.0 1.5 1.0 0.5 0 3.0 2.0 Eoff 1.0 Erec 0 200 400 CURRENT (A) 600 800 0 0 5 10 15 20 25 30 GATE RESISTANCE () GATE CHARGE CHARACTERISTICS (TYPICAL) 20 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS GATE-EMITTER VOLTAGE VGE (V) 16 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j - c) VCC = 2250V IC = 400A 101 7 5 3 2 100 7 5 3 2 10-1 7 5 3 2 Single Pulse TC = 25C Rth(j - c)Q = 0.021K/ W Rth(j - c)R = 0.042K/ W 12 8 4 0 0 2000 4000 6000 8000 10-2 10-3 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 TIME (s) GATE CHARGE QG (nC) REVERSE RECOVERY CURRENT Irr (A) Mar. 2003 HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 5 VCC = 2250V, VGE = 15V 3 2 RG = 22.5, Tj = 125C Inductive load 101 7 5 td(off) 3 2 td(on) 100 7 tr 5 3 tf 2 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) |
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