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POWER TRANSISTOR E13002
SWITCHING REGULATOR APPLICATION
* High speed switching * Suitable for switching regulator and motor control * Case : TO-126 molded plastic body
B U Q A
123
TO-126
C M
DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02
F
H
K
V G S D
2 PL
J R 0.25 (0.010)
M M
NPN SILICON TRANSISTOR FEATURES
Tc=25 C unless otherwise specified
o
A B
M
B
M
0.25 (0.010)
A
M
M
Parameter
Power dissipation Collector current Operating and storage junction temperature range
Symbol
PCM ICM TJ, TSTG
o
Value
1.2 1.0 -55 C to +150 C
o
UNIT
W A
o
C
ELECTRICAL CHARACTERISTICS
Parameter
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Fall time Storage time
Tc=25 C unless otherwise specified
o
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) hFE(3) VCEsat VBEsat fT tf ts
Test conditions
IC=100i , IE=0 A IC=1mA , IB=0 IE=100i , IC=0 A VCB=600V , IE=0 VEB=6V , IC=0 VCE=10V , IC=100mA VCE=10V , IC=200mA VCE=10V , IC=10mA IC=200mA , IB=40mA IC=200mA , IB=40mA VCE=10V , IC=100mA f=1MHz IC=1A , IB1=-IB2=0.2A , VCC=100V
MIN
600 400 6
MAX
UNIT
V V V
100 100 8 9 6 0.8 1.1 5 0.5 2.5 60 40
i A i A
V V MHz
i S i S
RATINGS AND CHARACTERISTIC CURVES E13002

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