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| VISHAY TLM.230. Vishay Semiconductors MiniLED Ultrabright Description The new MiniLED Series have been designed in a small white SMT package. The feature of the device is the very small package 2.3 mm x 1.3 mm x 1.4 mm. The MinLED is an obvious solution for small-scale, high-power products that are expected to work reliability in an arduous environment. This is often the case in automotive and industrial application. Features * SMD LEDs with exceptional brightness * Luminous intensity categorized * Compatible with automatic placement equipment IR reflow soldering Available in 8 mm tape Low profile package Non-diffused lens: Excellent for coupling to light pipes and backlighting * Low power consumption * Luminous intensity ratio in one packing unit IVmax/IVmin 2.0, optional 1.6 * * * * 16906 Applications Automotive: Backlighting in dashboards and switches Telecommunication: Indicator and backlighting in telephone and fax Indicator and backlight for audio and video equipment Indicator and backlight in office equipment Flat backlight for LCDs, switches and symbols Parts Table Part TLMK2300 TLMF2300 TLME2300 Color, Luminous Intensity Red, IV = 80 mcd (typ.) Orange, IV = 120 mcd (typ.) Yellow, IV = 120 mcd (typ.) 60 60 60 Angle of Half Intensity () Technology AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified TLMK230. ,TLMF230. ,TLME230. Parameter Reverse voltage DC forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ ambient according to IPC 9501 mounted on PC board (pad size > 5 mm2) Tamb 80 C tp 10 s Tamb 80 C Test condition Symbol VR IF IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 30 0.1 80 125 - 40 to + 100 - 40 to + 100 245 580 Unit V mA A mW C C C C K/W Document Number 83200 Rev. A5, 13-Jun-03 www.vishay.com 1 TLM.230. Vishay Semiconductors Optical and Electrical Characteristics Tamb = 25 C, unless otherwise specified VISHAY Red TLMK230. Parameter Luminous intensity 1) Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance 1) Test condition IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IR = 10 A VR = 0, f = 1 MHz Symbol IV d p VF VR Cj Min 32 Typ. 80 630 643 60 1.9 Max Unit mcd nm nm deg 2.6 V V pF 5 15 in one Packing Unit IVmax/IVmin 2.0 Orange TLMF230. Parameter Luminous intensity 1) Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance 1) Test condition IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IR = 10 A VR = 0, f = 1 MHz Symbol IV d p VF VR Cj Min 50 598 Typ. 120 605 610 60 2.0 Max 611 Unit mcd nm nm deg 2.6 V V pF 5 15 in one Packing Unit IVmax/IVmin 2.0 Yellow TLME230. Parameter Luminous intensity 1) Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance 1) Test condition IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IR = 10 A VR = 0, f = 1 MHz Symbol IV d p VF VR Cj Min 50 581 Typ. 120 588 590 60 2.0 Max 594 Unit mcd nm nm deg 2.6 V V pF 5 15 in one Packing Unit IVmax/IVmin 2.0 www.vishay.com 2 Document Number 83200 Rev. A5, 13-Jun-03 VISHAY Typical Characteristics (Tamb = 25 C unless otherwise specified) 100 PV -Power Dissipation (mW) TLM.230. Vishay Semiconductors 100 Red I F - Forward Current ( mA ) 80 60 40 20 0 0 20 40 60 80 100 120 10 1 1.0 17509 17523 Tamb - Ambient Temperature ( C ) 1.5 2.0 2.5 VF - Forward Voltage ( V ) 3.0 Figure 1. Power Dissipation vs. Ambient Temperature Figure 4. Forward Current vs. Forward Voltage 40 IVrel-Relative Luminous Intensity 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 17510 35 I F-Forward Current ( mA ) Red 30 25 20 15 10 5 0 IF = 20 mA 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C ) 17524 Tamb - Ambient Temperature ( C ) Figure 2. Forward Current vs. Ambient Temperature Figure 5. Rel. Luminous Intensity vs. Ambient Temperature 0 I V re l - Relative Luminous Intensity 10 20 30 I Vrel- Relative Luminous Intensity 10.00 Red 1.0 0.9 0.8 0.7 0.6 40 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 1.00 0.10 0.01 1 17511 95 10319 10 IF - Forward Current ( mA ) 100 Figure 3. Rel. Luminous Intensity vs. Angular Displacement Figure 6. Relative Luminous Intensity vs. Forward Current Document Number 83200 Rev. A5, 13-Jun-03 www.vishay.com 3 TLM.230. Vishay Semiconductors VISHAY 1.2 1.1 Red 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 600 610 620 630 640 650 660 670 680 690 700 - Wavelength ( nm ) 1.6 I Vrel- Relative Luminous Intensity 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 Orange I rel - Relative Intensity IF = 20 mA 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C ) 17512 17504 Figure 7. Relative Intensity vs. Wavelength Figure 10. Rel. Luminous Intensity vs. Ambient Temperature 2.10 2.05 VF - Forward Voltage ( V ) 10.00 Red I Vrel- Relative Luminous Intensity Orange 2.00 1.95 1.90 1.85 1.80 1.75 1.70 1.65 1.60 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C ) IF = 20 mA 1.00 0.10 0.01 1 17505 10 IF - Forward Current ( mA ) 100 17513 Figure 8. Forward Voltage vs. Ambient Temperature Figure 11. Relative Luminous Intensity vs. Forward Current 100 Orange I F - Forward Current ( mA ) I rel - Relative Intensity 10 1 1.0 17503 1.5 2.0 2.5 3.0 17506 1.2 1.1 Orange 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 560 570 580 590 600 610 620 630 640 650 660 - Wavelength ( nm ) VF - Forward Voltage ( V ) Figure 9. Forward Current vs. Forward Voltage Figure 12. Relative Intensity vs. Wavelength www.vishay.com 4 Document Number 83200 Rev. A5, 13-Jun-03 VISHAY TLM.230. Vishay Semiconductors 2.10 I Vrel- Relative Luminous Intensity 10.00 Orange Yellow 2.05 VF - Forward Voltage ( V ) 2.00 1.95 1.90 1.85 1.80 1.75 1.70 1.65 1.60 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C ) IF = 20 mA 1.00 0.10 0.01 1 17501 10 IF - Forward Current ( mA ) 100 17507 Figure 13. Forward Voltage vs. Ambient Temperature Figure 16. Relative Luminous Intensity vs. Forward Current 100 Yellow I F - Forward Current ( mA ) I rel - Relative Intensity 10 1 1.0 95 10878y 1.5 2.0 2.5 3.0 1.2 1.1 Yellow 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 550 560 570 580 590 600 610 620 630 640 650 l - Wavelength ( nm ) VF - Forward Voltage ( V ) 95 10881y Figure 14. Forward Current vs. Forward Voltage Figure 17. Relative Intensity vs. Wavelength 1.6 IVrel - Relative Luminous Intensity VF - Forward Voltage ( V ) 2.15 Yellow 2.10 2.05 2.00 1.95 1.90 1.85 1.80 1.75 1.70 1.65 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C ) 17502 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 Yellow IF = 20 mA IF = 20 mA 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C ) 17508 Figure 15. Rel. Luminous Intensity vs. Ambient Temperature Figure 18. Forward Voltage vs. Ambient Temperature Document Number 83200 Rev. A5, 13-Jun-03 www.vishay.com 5 TLM.230. Vishay Semiconductors Package Dimensions in mm VISHAY 16892 www.vishay.com 6 Document Number 83200 Rev. A5, 13-Jun-03 VISHAY Reel Dimensions TLM.230. Vishay Semiconductors 16938 Document Number 83200 Rev. A5, 13-Jun-03 www.vishay.com 7 TLM.230. Vishay Semiconductors Tape Dimensions VISHAY 16939 Leader and Trailer Trailer no devices devices Leader no devices End min. 200 min. 400 Start 96 11818 GS08 = 3000 pcs www.vishay.com 8 Document Number 83200 Rev. A5, 13-Jun-03 VISHAY Cover Tape Peel Strength According to DIN EN 60286-3 0.1 to 1.3N 300 10 mm/min 165 - 180 peel angle TLM.230. Vishay Semiconductors Label Standard bar code labels for finished goods The standard bar code labels are product labels and used for identification of goods. The finished goods are packed in final packing area. The standard packing units are labeled with standard bar code labels before transported as finished goods to warehouses. The labels are on each packing unit and contain Vishay Semiconductor GmbH specific data. Vishay Semiconductor GmbH standard bar code product label (finished goods) Plain Writing Item-Description Item-Number Selection-Code LOT-/ Serial-Number Data-Code Plant-Code Quantity Accepted by: Packed by: Mixed Code Indicator Origin Long Bar Code Top Item-Number Plant-Code Sequence-Number Quantity Total Length Short Bar Code Bottom Selection-Code Data-Code Batch-Number Filter Total Length Abbreviation - INO SEL BATCH COD PTC QTY ACC PCK MIXED CODE xxxxxxx+ Type N N X N - Type X N X - - Length 18 8 3 10 3 (YWW) 2 8 - - - Company Logo Length 8 2 3 8 21 Length 3 3 10 1 17 16942 Document Number 83200 Rev. A5, 13-Jun-03 www.vishay.com 9 TLM.230. Vishay Semiconductors Dry Packing The reel is packed in an anti-humidity bag to protect the devices from absorbing moisture during transportation and storage. Aluminium bag VISHAY Label Reel 17028 15973 Example of JESD22-A112 Level 2 label ESD Precaution Proper storage and handling procedures should be followed to prevent ESD damage to the devices especially when they are removed from the Antistatic Shielding Bag. Electro-Static Sensitive Devices warning labels are on the packaging. Final Packing The sealed reel is packed into a cardboard box. A secondary cardboard box is used for shipping purposes. Recommended Method of Storage Dry box storage is recommended as soon as the aluminium bag has been opened to prevent moisture absorption. The following conditions should be observed, if dry boxes are not available: * Storage temperature 10 C to 30 C * Storage humidity 60 % RH max. After more than 1 year under these conditions moisture content will be too high for reflow soldering. In case of moisture absorption, the devices will recover to the former condition by drying under the following condition: 192 hours at 40 C +5 C/ -0 C and < 5 % RH (dry air/ nitrogen) or 96 hours at 60 C +5 C and < 5 % RH for all device containers or 24 hours at 100 C +5 C not suitable for reel or tubes. An EIA JEDEC Standard JESD22-A112 Level 2 label is included on all dry bags. Vishay Semiconductors Standard Bar-Code Labels The Vishay Semiconductors standard bar-code labels are printed at final packing areas. The labels are on each packing unit and contain Vishay Telefunken specific data. Assembly Instructions Reflow Soldering * Reflow soldering must be done within 1 year stored under max. 30 C, 60 % RH after opening envelop * Recommended soldering paste (composition: SN 63 %, Pb 37 %) Melting temperature 178 C to 192 C * Apply solder paste to the specified soldering pads, by using a dispenser or by screen printing. * Recommended thickness of metal mask is 0.2 mm for screen printing. * The recommended reflow furnace is a combinationtype with upper and lower heaters. * Set the furnace temperatures for pre-heating and heating in accordance with the reflow temperature profile as shown below. Excercise extreme care to keep the maximum temperature below 230 C. The Document Number 83200 Rev. A5, 13-Jun-03 www.vishay.com 10 VISHAY following temperature profile means the tempera ture at the device surface. Since temperature differ ence occurs between the work and the surface of the circuit board depending on the pes of circuit board or reflow furnace, the operating conditions should be verified prior to start of operation. * Handling after reflow should be done only after the work surface has been cooled off. Manual Soldering * Use the 6/4 solder or the solder containing silver. * Use a soldering iron of 25 W or smaller. Adjust the temperature of the soldering iron below 300 C. * Finish soldering within three seconds. * Handle products only after the temperature is cooled off. Cleaning * Perform cleaning after soldering strictly in conformance to the following conditions: Cleaning agent: 2-propanol (isopropyl alcohol). Commercially available grades (industrial use) should be used. Demineralized or distilled water having a resistivity of not less than 500 m corresponding to a conductivity of 2 mS/m. * Temperature and time: 30 seconds under the temperature below 50 C or 3 minutes below 30 C. * Ultrasonic cleaning: Below 20 W. Reflow Solder Profile 240 220 200 180 160 140 120 100 80 60 40 20 0 0 10 s max. @ 230 C TLM.230. Vishay Semiconductors 2 C - 4 C/s Temperature ( C ) 120 s - 180 s 90 s max 2 C - 4 C/s 50 100 150 200 250 Time ( s ) 300 350 16944 Document Number 83200 Rev. A5, 13-Jun-03 www.vishay.com 11 TLM.230. Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. VISHAY 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 12 Document Number 83200 Rev. A5, 13-Jun-03 |
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