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TLM.310.
Vishay Semiconductors
SMD LED in P-LCC-2 Package
Color High efficiency red Soft orange Yellow Green Pure green Type TLMH310. TLMO310. TLMY310. TLMG310. TLMP310. Technology GaAsP on GaP GaAsP on GaP GaAsP on GaP GaP on GaP GaP on GaP Angle of Half Intensity o 60 60 60 60 60
Description
These devices have been designed to meet the increasing demand for surface mounting technology. The package of the TLM.310. is the P-LCC-2 (equivalent to a size B tantalum capacitor). It consists of a lead frame which is embedded in a white thermoplast. The reflector inside this package is filled up with clear epoxy.
Features
D D D D D
SMD LEDs with exceptional brightness Luminous intensity categorized Compatible with automatic placement equipment EIA and ICE standard package Compatible with infrared, vapor phase and wave solder processes according to CECC
94 8553
D Available in 8 mm tape D Low profile package D Non-diffused lens: excellent for coupling to light
pipes and backlighting
D Low power consumption D Luminous intensity ratio in one packaging unit
IVmax/IVmin
x 2.0, optional x 1.6
Applications
Automotive: backlighting in dashboards and switches Telecommunication: indicator and backlighting in telephone and fax Indicator and backlight for audio and video equipment Indicator and backlight in office equipment Flat backlight for LCDs, switches and symbols General use
Document Number 83032 Rev. A4, 29-Sep-00
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TLM.310.
Vishay Semiconductors Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified TLMH310. ,TLMO310. ,TLMY310. ,TLMG310. ,TLMP310. Parameter Reverse voltage DC forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Test Conditions Tamb 60C tp 10 ms Tamb 60C Symbol VR IF IFSM PV Tj Tamb Tstg Tsd RthJA Value 6 30 0.5 100 100 -40 to +100 -55 to +100 260 400 Unit V mA A mW C C C C K/W
t5s mounted on PC board (pad size > 16 mm2)
Optical and Electrical Characteristics
Tamb = 25_C, unless otherwise specified High efficiency red (TLMH310. ) Parameter Luminous intensity 2) y Test Conditions IF = 10 mA Type Symbol TLMH3100 IV TLMH3101 IV TLMH3102 IV ld lp VF VR Cj Min 2.5 4 6.3 612 Typ 6 Max 12.5 20 625 635 60 2.4 15 15 Unit mcd mcd mcd nm nm deg V V pF
Dominant wavelength IF = 10 mA Peak wavelength IF = 10 mA Angle of half intensity IF = 10 mA Forward voltage IF = 20 mA Reverse voltage IR = 10 mA Junction capacitance VR = 0, f = 1 MHz 2) in one Packing Unit I Min./ I Max. 2 V V
3
6
v
Soft orange (TLMO310. ) Parameter Luminous intensity 2) Test Conditions IF = 10 mA Type Symbol TLMO3100 IV TLMO3101 IV ld lp VF VR Cj Min 2.5 4 598 Typ 8 Max 12.5 611 605 60 2.2 15 15 Unit mcd mcd nm nm deg V V pF
Dominant wavelength IF = 10 mA Peak wavelength IF = 10 mA Angle of half intensity IF = 10 mA Forward voltage IF = 20 mA Reverse voltage IR = 10 mA Junction capacitance VR = 0, f = 1 MHz 2) in one Packing Unit I Min./ I Max. 2 V V
3
6
v
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Document Number 83032 Rev. A4, 29-Sep-00
TLM.310.
Vishay Semiconductors
Yellow (TLMY310. ) Parameter Luminous intensity 2) Luminous intensity 1) Test Conditions IF = 10 mA Type Symbol Min TLMY3100 IV 2.5 TLMY3101 IV 4 TLMY3102 IV 6.3 ld 581 lp VF VR 6 Cj 2) in one Packing Unit I Min./ I Max. V V Typ 6 Max 12.5 20 594 585 60 2.4 15 15 2 Unit mcd mcd mcd nm nm deg V V pF
Dominant wavelength IF = 10 mA Peak wavelength IF = 10 mA Angle of half intensity IF = 10 mA Forward voltage IF = 20 mA Reverse voltage IR = 10 mA Junction capacitance VR = 0, f = 1 MHz 1) in one Packing Unit I Min./ I Max. 1.6 V V
3
v
v
Green (TLMG310. ) Parameter Test Conditions Type Symbol TLMG3100 IV TLMG3101 IV TLMG3102 IV TLMG3105 IV TLMG3106 IV ld lp VF VR Cj Min 4 4 10 6.3 6.3 562 Typ 9 Max 12.5 20 20 12.5 575 565 60 2.2 15 15 Unit mcd mcd mcd mcd mcd nm nm deg V V pF
Luminous intensity y
2)
IF = 10 mA
Dominant wavelength IF = 10 mA Peak wavelength IF = 10 mA Angle of half intensity IF = 10 mA Forward voltage IF = 20 mA Reverse voltage IR = 10 mA Junction capacitance VR = 0, f = 1 MHz 2) in one Packing Unit I Min./ I Max. 2 V V
3
6
v
Pure green (TLMP310. ) Parameter Luminous intensity 2) Test Conditions Type Symbol Min TLMP3100 IV 1 TLMP3101 IV 1.6 TLMP3106 IV 1.6 TLMP3107 IV 2.5 TLMP3102 IV 2.5 ld 555 lp VF VR 6 Cj 2) in one Packing Unit I Min./ I Max. V V Typ 4 Max 5 3.2 5 8 565 555 60 2.4 15 15 2 Unit mcd mcd mcd mcd mcd nm nm deg V V pF
IF = 10 mA
Luminous intensity 1) Dominant wavelength IF = 10 mA Peak wavelength IF = 10 mA Angle of half intensity IF = 10 mA Forward voltage IF = 20 mA Reverse voltage IR = 10 mA Junction capacitance VR = 0, f = 1 MHz 1) in one Packing Unit I Min./ I Max. 1.6 V V
3
v
v
Document Number 83032 Rev. A4, 29-Sep-00
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TLM.310.
Vishay Semiconductors Typical Characteristics (Tamb = 25_C, unless otherwise specified)
125 Iv rel - Relative Luminous Intensity PV - Power Dissipation ( mW ) 0 10 20 30
100
40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 0.6
75
50 25 0 0 20 40 60 80 100
95 10904
Tamb - Ambient Temperature ( C )
95 10319
Figure 1. Power Dissipation vs. Ambient Temperature
60 IF - Forward Current ( mA ) IF - Forward Current ( mA ) 50 40 30 20 10 0 0
95 10905
Figure 4. Rel. Luminous Intensity vs. Angular Displacement
100 High Efficiency Red
10
1
0.1 20 40 60 80 100
95 9989
0
1
2
3
4
5
Tamb - Ambient Temperature ( C )
VF - Forward Voltage ( V )
Figure 2. Forward Current vs. Ambient Temperature
10000 Tamb IF - Forward Current ( mA ) tp/T=0.005 1000 0.01 0.02 0.05 100 0.2 0.5 DC 10 0.1 Iv rel - Relative Luminous Intensity
Figure 5. Forward Current vs. Forward Voltage
2.0 High Efficiency Red 1.6
v60C
1.2
0.8 0.4 0
1 0.01
95 9985
0.1
1
10
100
95 9993
0
20
40
60
80
100
tp - Pulse Length ( ms )
Tamb - Ambient Temperature ( C )
Figure 3. Forward Current vs. Pulse Length
Figure 6. Rel. Luminous Intensity vs. Ambient Temperature
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Document Number 83032 Rev. A4, 29-Sep-00
TLM.310.
Vishay Semiconductors
2.4 Iv rel - Relative Luminous Intensity High Efficiency Red IF - Forward Current ( mA ) 2.0 1.6 1.2 0.8 0.4 0 10
95 10321
100 Soft Orange
10
1
0.1 20 0.5 50 0.2 100 0.1 200 0.05 500 0.02 IF(mA) tp/T
95 9990
0
1
2
3
4
5
1
VF - Forward Voltage ( V )
Figure 7. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
10 Iv rel - Relative Luminous Intensity High Efficiency Red
Figure 10. Forward Current vs. Forward Voltage
2.0 Iv rel - Relative Luminous Intensity Soft Orange 1.6
1
1.2
0.1
0.8 0.4 0
0.01 1
95 9995
10 IF - Forward Current ( mA )
100
95 9994
0
20
40
60
80
100
Tamb - Ambient Temperature ( C )
Figure 8. Relative Luminous Intensity vs. Forward Current
1.2 Iv rel - Relative Luminous Intensity High Efficiency Red 1.0 0.8 0.6 0.4 0.2 0 590
95 10040
Figure 11. Rel. Luminous Intensity vs. Ambient Temperature
2.4 Iv rel - Relative Luminous Intensity Soft Orange 2.0 1.6 1.2 0.8 0.4 0
610
630
650
670
690
95 10259
10 1
20 0.5
50 0.2
100 0.1
200 0.05
500 0.02
IF(mA) tp/T
l - Wavelength ( nm )
Figure 9. Relative Luminous Intensity vs. Wavelength
Figure 12. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
Document Number 83032 Rev. A4, 29-Sep-00
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TLM.310.
Vishay Semiconductors
10 Iv rel - Relative Luminous Intensity Soft Orange Iv rel - Relative Luminous Intensity 2.0 Yellow 1.6
1
1.2
0.1
0.8 0.4 0
0.01 1
95 9997
10 IF - Forward Current ( mA )
100
95 9992
0
20
40
60
80
100
Tamb - Ambient Temperature ( C )
Figure 13. Relative Luminous Intensity vs. Forward Current
1.2 Iv rel - Relative Luminous Intensity Iv rel - Relative Luminous Intensity Soft Orange 1.0 0.8 0.6 0.4 0.2 0 570
95 10324
Figure 16. Rel. Luminous Intensity vs. Ambient Temperature
2.4 Yellow 2.0 1.6 1.2 0.8 0.4 0
590
610
630
650
670
95 10260
10 1
20 0.5
50 0.2
100 0.1
200 0.05
500 0.02
IF(mA) tp/T
l - Wavelength ( nm )
Figure 14. Relative Luminous Intensity vs. Wavelength
100 Yellow IF - Forward Current ( mA ) Iv rel - Relative Luminous Intensity 10
Figure 17. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
Yellow
10
1
1
0.1
0.1 0
95 9987
0.01 1 2 3 4 5
95 9999
1
10 IF - Forward Current ( mA )
100
VF - Forward Voltage ( V )
Figure 15. Rel. Luminous Intensity vs. Ambient Temperature
Figure 18. Relative Luminous Intensity vs. Forward Current
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Document Number 83032 Rev. A4, 29-Sep-00
TLM.310.
Vishay Semiconductors
1.2 Iv rel - Relative Luminous Intensity Iv rel- Specific Luminous Intensity Yellow 1.0 0.8 0.6 0.4 0.2 0 550
95 10039
2.4 Green 2.0 1.6 1.2 0.8 0.4 0 570 590 610 630 650
95 10263
10
20
50
100
200
500
l - Wavelength ( nm )
IF - Forward Current ( mA )
Figure 19. Relative Luminous Intensity vs. Wavelength
100 Iv rel - Relative Luminous Intensity Green IF - Forward Current ( mA )
Figure 22. Specific Luminous Intensity vs. Forward Current
10 Green
10
1
1
0.1
0.1 0
95 9986
0.01 1 2 3 4 5
95 9996
1
10 IF - Forward Current ( mA )
100
VF - Forward Voltage ( V )
Figure 20. Forward Current vs. Forward Voltage
2.0 Iv rel - Relative Luminous Intensity Green 1.6 Iv rel - Relative Luminous Intensity
Figure 23. Relative Luminous Intensity vs. Forward Current
1.2 Green 1.0 0.8 0.6 0.4 0.2 0 520
95 10038
1.2
0.8 0.4 0 0 20 40 60 80 100
540
560
580
600
620
95 10320
Tamb - Ambient Temperature ( C )
l - Wavelength ( nm )
Figure 21. Rel. Luminous Intensity vs. Ambient Temperature
Figure 24. Relative Luminous Intensity vs. Wavelength
Document Number 83032 Rev. A4, 29-Sep-00
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TLM.310.
Vishay Semiconductors
100 Pure Green IF - Forward Current ( mA ) Iv rel - Relative Luminous Intensity 10 Pure Green
10
1
1
0.1
0.1 0
95 9988
0.01 1 2 3 4 5
95 9998
1
10 IF - Forward Current ( mA )
100
VF - Forward Voltage ( V )
Figure 25. Forward Current vs. Forward Voltage
2.0 Iv rel - Relative Luminous Intensity Iv rel - Relative Luminous Intensity Pure Green 1.6
Figure 28. Relative Luminous Intensity vs. Forward Current
1.2 1.0 0.8 0.6 0.4 0.2 0 500
95 10325
Pure Green
1.2
0.8 0.4 0 0 20 40 60 80 100
520
540
560
580
600
95 9991
Tamb - Ambient Temperature ( C )
l - Wavelength ( nm )
Figure 26. Rel. Luminous Intensity vs. Ambient Temperature
2.4 Iv rel- Specific Luminous Intensity Pure Green 2.0 1.6 1.2 0.8 0.4 0 10
95 10261
Figure 29. Relative Luminous Intensity vs. Wavelength
20
50
100
200
500
IF - Forward Current ( mA )
Figure 27. Specific Luminous Intensity vs. Forward Current
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Document Number 83032 Rev. A4, 29-Sep-00
TLM.310.
Vishay Semiconductors Dimensions in mm
95 11314
PCB Layout in mm
95 10966
Document Number 83032 Rev. A4, 29-Sep-00
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TLM.310.
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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Document Number 83032 Rev. A4, 29-Sep-00

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