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| VISHAY BYT54. Vishay Semiconductors Fast Avalanche Sinterglass Diode \ Features * * * * Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics Applications Very fast rectification and switching diodes Mechanical Data Case: Sintered glass case, SOD 57 949539 Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 370 mg, (max. 500 mg) Parts Table Part BYT54A BYT54B BYT54D BYT54G BYT54J BYT54K BYT54M Type differentiation VR = 50 V; IFAV = 1.25 A VR = 100 V; IFAV = 1.25 A VR = 200 V; IFAV = 1.25 A VR = 400 V; IFAV = 1.25 A VR = 600 V; IFAV = 1.25 A VR = 800 V; IFAV = 1.25 A VR = 1000 V; IFAV = 1.25 A SOD57 SOD57 SOD57 SOD57 SOD57 SOD57 SOD57 Package Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Reverse voltage = Repetitive peak reverse voltage Test condition see electrical characteristics see electrical characteristics see electrical characteristics see electrical characteristics see electrical characteristics see electrical characteristics see electrical characteristics Sub type BYT54A BYT54B BYT54D BYT54G BYT54J BYT54K BYT54M Symbol VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = VRRM Value 50 100 200 400 600 800 1000 Unit V V V V V V V Document Number 86031 Rev. 5, 07-Jan-03 www.vishay.com 1 BYT54. Vishay Semiconductors Parameter Peak forward surge current Average forward current Junction and storage temperature range on PC board l = 10 mm BYT54A BYT54B BYT54D BYT54G BYT54J BYT54K BYT54M Non repetitive reverse avalanche energy I(BR)R = 0.4 A I(BR)R = 0.4 A I(BR)R = 0.4 A BYT54J BYT54K BYT54M Test condition tp = 10 ms, half sinewave Sub type Symbol IFSM IFAV IFAV VISHAY Value 30 0.75 1.25 Unit A A A C C C C C C C mJ mJ mJ Tj = Tstg - 55 to + 175 Tj = Tstg - 55 to + 175 Tj = Tstg - 55 to + 175 Tj = Tstg - 55 to + 175 Tj = Tstg - 55 to + 175 Tj = Tstg - 55 to + 175 Tj = Tstg - 55 to + 165 ER ER ER 10 10 10 Maximum Thermal Resistance Tamb = 25 C, unless otherwise specified Parameter Junction ambient Test condition l = 10 mm, TL = constant on PC board with spacing 25 mm Sub type Symbol RthJA RthJA Value 45 100 Unit K/W K/W Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Forward voltage Reverse current Reverse recovery time IF = 1 A VR = VRRM VR = VRRM, Tj = 150 C IF = 0.5 A, IR = 1 A, iR = 0.25 A Test condition Sub type Symbol VF IR IR trr Min Typ. Max 1.5 5 150 100 Unit V A A ns Typical Characteristics (Tamb = 25 C unless otherwise specified) R thJA - Therm. Resist. Junction / Ambient ( K/W ) Figure 1. Max. Thermal Resistance vs. Lead Length 120 100 80 60 l 40 20 0 0 5 10 15 TL=constant 20 25 30 l - Lead Length ( mm ) l 94 9552 www.vishay.com 2 Document Number 86031 Rev. 5, 07-Jan-03 VISHAY BYT54. Vishay Semiconductors 10.000 PR - Reverse Power Dissipation ( mW ) 450 400 350 300 250 200 150 100 50 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VF - Forward Voltage ( V ) 3.5 16341 VR = VRRM I F - Forward Current ( A) Tj=175C Tj=25C 1.000 PR-Limit @100%VR 0.100 0.010 PR-Limit @80%VR 0.001 16338 25 50 75 100 125 150 Tj - Junction Temperature ( C ) 175 Figure 2. Forward Current vs. Forward Voltage Figure 5. Max. Reverse Power Dissipation vs. Junction Temperature 1.4 I FAV - Average Forward Current ( A ) CD - Diode Capacitance ( pF ) 35 VR=VRRM half sinewave RthJA=45K/W l=10mm 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160 180 16342 1.2 1.0 0.8 0.6 0.4 0.2 0.0 RthJA=100K/W PCB: d=25mm f=1MHz 0.1 1.0 10.0 100.0 16339 Tamb - Ambient Temperature ( C ) VR - Reverse Voltage ( V ) Figure 3. Max. Average Forward Current vs. Ambient Temperature Figure 6. Diode Capacitance vs. Reverse Voltage 1000 VR = VRRM IR - Reverse Current ( mA ) 100 10 1 25 16340 50 75 100 125 150 175 Tj - Junction Temperature ( C ) Figure 4. Reverse Current vs. Junction Temperature Document Number 86031 Rev. 5, 07-Jan-03 www.vishay.com 3 BYT54. Vishay Semiconductors Package Dimensions in mm 3.6 max. Sintered Glass Case SOD 57 Weight max. 0.5g Cathode Identification technical drawings according to DIN specifications 94 9538 VISHAY 0.82 max. 26 min. 4.2 max. 26 min. www.vishay.com 4 Document Number 86031 Rev. 5, 07-Jan-03 VISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. BYT54. Vishay Semiconductors 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 86031 Rev. 5, 07-Jan-03 www.vishay.com 5 |
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