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 STB7720L
2.4-2.5 GHz Silicon Linear Power Amplifier IC
PRELIMINARY DATA
FEATURES SUMMARY * EXCELLENT LINEARITY EVM 2% @ 19dBm (WITH 802.11g OFDM 54Mb/s MODULATION) * VERY LOW QUIESCENT CURRENT (60mA) * INTEGRATED LINEAR ANALOG CONTROL FOR DC CURRENT AND OUTPUT MANAGEMENT * INTEGRATED AVERAGE CHANNEL POWER DETECTOR * LEADLESS PACKAGE (3mmx3mm LEAD FREE) APPLICATIONS * OPTIMIZED FOR USE IN 802.11 b/g
Figure 1. Package
QFN16L (3x3)
DESCRIPTION The STB7720L, manufactured in the third generation of ST proprietary pure Si bipolar process, is a three-stage linear power amplifier (PA) optimized for 802.11b/g wireless LAN (WLAN) applications in the 2.4GHz ISM band. It features 32dB of power gain and delivers 19dBm of linear output power with an EVM degradation of only 2% under 802.11g Modulation (54Mbps). The current consumption is as low as 125mA at 19dBm make the STB7720L a good solution for mobile applications. It achieves less than -40dBc firstside lobe suppression and less than -52dBc secondside lobe suppression under 802.11b modulation (11Mbps). The device embeds a Linear Analog Control for DC current and output management and a Proprietary Average Channel Power Detector solution. This power detector has 20dB dynamic range with 1 voltage range and 0.3dB accuracy under 2:1 load mismatch. It provides a buffered DC voltage proportional to the average channel output power. Thanks to this solution we save cost and space by removing a coupler, an op amp (usually required in a power down function) and also an integrator. The SBT7720 is housed in QFN 3mmx3mm Leadless package. Table 1. Order Codes
Order Codes STB7720 Marking 7720 Package QFN16L (3x3) Packaging Tape & Reel
Table 2. Absolute Maximum Ratings (Tamb = 25 oC)
Symbol Vcc Tstb Ta Pin Supply voltage Storage temperature Operating Ambient Temperature Input Power Parameter Value 5.5 -55 to + 150 -30 + 85 10 Unit V
oC o
C
dBm
Table 3. Thermal Data
Rth(j-case) August 2004 Thermal Resistance Junction-Case TBD REV. 1 1/8
o
C/W
STB7720L
Figure 2. Functional Block Diagram
V Supply
Detected Power
Power Detector Input pre Matching Interstage Matching Interstage Matching Output Matching
IN
OUT
Bias Network
Quiescent C urre nt Regulation
Figure 3. Pin Connection
16 15 14 13
Table 4. Pin Description
PIN 1 2 Symbol nc RFin Vcnt Epd Vcc VDET nc nc nc RFout RFout nc nc Vcc nc Vcc GND Function RF input Power Control Voltage Enable Power Detector Supply Voltage Power Detector Voltage RF output RF output Supply Voltage Supply Voltage Ground
1
TOP VIEW
12
3 4
2
11
5 6
3 4 EP (17)
10 9
7 8 9 10 11
5
6
7
8
12 13 14 15 16 EP
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STB7720L
Table 5. Electrical Characteristics (Tamd = 25 oC, Vcc=3.3V, f=2.45GHz, Vcnt = 2.9V)
Symbol f Vcc Icc(1) Gp P1dB Parameter Frequency Supply Voltage Current Consumption Power Gain P1dB Compression Gain variation over Frequency Gain variation over Temperature Quiescent Current EVM(1) ACPR(2) Vdet Error Vector Magnitude Adiacent Channel Power Ratio Output Detector Voltage Range Output Detector Voltage Response Time 2nd to 5th Harmonics Spurious (stability)(3) Turn On Time(4)
Notes: (1) Parameter measured with RF modulation based on IEEE 802.11g standard (OFDM 54Mbps) (2) Parameter measured with RF modulation based on IEEE 802.11b standard (CCK 11Mbps) (3) Load VSWR is set to 10:1 and the angle is varied 360 degrees. Pout = -30 dBm to P1dB (4) Measured from Device On signal turn on to the point where RF Pout stabilizes to 0.5dB
Test Conditions
Min. 2.4 3.0
Typ. 2.45 3.3 125 32 25 -/+ 0.5 -/+ 0.5 60
Max. 2.5 3.6
Unit GHz V mA dB dBm dB dB mA % dBc dBc V
Pout = 19 dBm
Pout = 19 dBm Pout = 19dBm, 1st Side Lobe Pout = 19dBm, 2nd Side Lobe
2 -40 -52 1 4 -40
s dBc dBc s
Load VSWR 10:1
-65 0.5
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STB7720L
TYPICAL PERFORMANCE Figure 4. Supply Current Vs Output Power
275 250
Figure 5. EVM Vs Output Power
8 7
225 200 175 150 125 100 75 50 25 0 0 5 10 15 20 25 Pout (dBm)
6 5 EVM (%)
Tc = +25 C
Ic (mA)
4 3 2 1 0 3 5 7 9 11 13 15 17 19 21 Pout (dBm)
Figure 6. Power Gain Vs Output Power
40 38 36 Tc = -30 C 34 Gain (dB) 32 Tc =+85 C 30 28 26 Tc =+25 C
Figure 7. Power Gain Vs Frequency
34
Temp. depend.
Temp. depend.
33
Gain (dB)
Tc =+85 C 32
Tc =+25 C 31 Tc = -30 C
24 22 20 0 5 10 15 Pout (dBm) 20 25 30
30 2400
2420
2440 f (MHz)
2460
2480
2500
Figure 8. Power Detector Voltage Vs Pout
1600
Figure 9. Power Detector Voltage Vs Pout
1600
Temp. depend.
1400
Vcc. depend.
1400
1200 Vdet (mV)
1200 Vdet (mV)
Tc = +85 C Tc = +25 C Tc = -30 C
1000
1000
800
800
600
600 @ 3V, 3.3V, 3.6V 400
0 5 10 15 20 25
400 Pout (dBm)
0
5
10
15
20
25
Pout (dBm)
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STB7720L
Figure 10. Circuit Schematic
Cn1 1 2 3 4 5 CON5 C3 100nF C4 10pF C8 100nF C9 10pF Vcc (3.3V) VEpd Vcnt (2.9V) + C1 10uF Vcc (3.3V) Vcc (3.3V) Vcc (3.3V) C10 100nF C11 10pF
/4 @ 3 Harmonic
/4 @ 4 Harmonic
16
15
14
13
L1 NC Vcc
RF IN
C2 1.5p
1 2
Vcc
NC
L2 INDUCTOR
NC RFIN Vcnt Epd Vdet Vcc NC NC
NC RFout RFout NC
12 11 10
RF OUT
C12 8pF C14 1pF C13 1.5pF S2
SMA
S1
Vcnt (2.9V) C5 1nF
3 4
SMA
9
VEpd 5 6 7 C6 1nF C7 1uF Vcc (3.3V) 8
ELISA01
R1 10KOhm
TP1
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STB7720L
PACKAGE MECHANICAL Table 6. Mechanical Data - Leadless PACKAGE Exposed Pad (3mm x 3mm) DIM.
A A1 A3 b D D2 E E2 e L N ND NE 0.30 1.30 1.30 0.18 mm MIN. 0.80 0 TYP. 0.90 0.02 0.20 REF 0.23 3.00 BSC 1.45 3.00 BSC 1.45 0.50 BSC 0.40 16 4 4 0.50 1.55 1.55 0.30 MAX 1.00 0.05
Figure 11. Package Dimensions
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STB7720L
REVISION HISTORY Table 7. Revision History
Date 2 August 2004 Revision 1 First Release Description of Changes
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STB7720L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2004 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States www.st.com
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