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| ON Semiconductor ) High Voltage NPN Silicon Power Transistors . . . designed for line operated audio output amplifier, SWITCHMODE t power supply drivers and other switching applications. TIP47 * TIP48 * TIP50 * *ON Semiconductor Preferred Device * 250 V to 400 V (Min) -- VCEO(sus) * 1 A Rated Collector Current * Popular TO-220 Plastic Package MAXIMUM RATINGS Rating Symbol VCEO VCB VEB IC IB TIP47 250 350 TIP48 300 400 5.0 1.0 2.0 0.6 TIP50 400 500 Unit Vdc Vdc Vdc Adc Adc 1.0 AMPERE POWER TRANSISTORS NPN SILICON 250-300-350-400 VOLTS 40 WATTS PD, POWER DISSIPATION (WATTS) III II IIIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII III I II II I II IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIII II I I II II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII II III I I II II IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII II II I I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIII II II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II II I I II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIII Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C Total Power Dissipation @ TA = 25_C Derate above 25_C PD 40 0.32 Watts W/_C Watts W/_C mJ _C PD 2.0 0.016 20 Unclamped Inducting Load Energy (See Figure 8) E Operating and Storage Junction Temperature Range TJ, Tstg -65 to +150 4 1 2 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR 3 CASE 221A-09 TO-220AB THERMAL CHARACTERISTICS Characteristic Symbol RJC RJA Max Unit Thermal Resistance, Junction to Case TA 4 3.125 62.5 _C/W _C/W Thermal Resistance, Junction to Ambient TC 40 3 30 TC 2 20 TA 1 10 0 0 0 20 40 60 100 120 80 TC, CASE TEMPERATURE (C) 140 160 Figure 1. Power Derating Preferred devices are ON Semiconductor recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2002 1 April, 2002 - Rev. 5 Publication Order Number: TIP47/D t, TIME ( s) II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I I III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII (1) Pulse Test: Pulse width v 300 s, Duty Cycle v 2.0%. ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) OFF CHARACTERISTICS Small-Signal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz) Current-Gain -- Bandwidth Product (IC = 0.1 Adc, VCE = 10 Vdc, f = 2.0 MHz) Base-Emitter On Voltage (IC = 1.0 Adc, VCE = 10 Vdc) Collector-Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.2 Adc) DC Current Gain (IC = 0.3 Adc, VCE = 10 Vdc) (IC = 1.0 Adc, VCE = 10 Vdc) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCE = 350 Vdc, VBE = 0) (VCE = 400 Vdc, VBE = 0) (VCE = 500 Vdc, VBE = 0) Collector Cutoff Current (VCE = 150 Vdc, IB = 0) (VCE = 200 Vdc, IB = 0) (VCE = 300 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (1) (IC = 30 mAdc, IB = 0) Vin 0 VEB(off) TURN-ON PULSE APPROX +11 V APPROX +11 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS. Vin TURN-OFF PULSE Figure 2. Switching Time Equivalent Circuit t2 t1 t3 t1 7.0 ns 100 < t2 < 500 s t3 < 15 ns DUTY CYCLE 2.0% APPROX -9.0 V Vin VCC Characteristic Cjd << Ceb RB RC -4.0 V TIP47 TIP48 TIP50 http://onsemi.com SCOPE 0.01 0.02 0.02 0.05 0.1 0.2 0.5 1.0 TIP47 TIP48 TIP50 TIP47 TIP48 TIP50 TIP47 TIP48 TIP50 0.05 0.2 0.5 0.1 IC, COLLECTOR CURRENT (AMPS) VCEO(sus) 2 Figure 3. Turn-On Time VCE(sat) VBE(on) Symbol ICEO IEBO ICES hFE hfe fT td tr Min 250 300 400 25 10 30 10 -- -- -- -- -- -- -- -- -- TJ = 25C VCC = 200 V IC/IB = 5.0 Max 150 -- 1.5 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 -- -- -- -- -- 1.0 mAdc mAdc mAdc MHz Unit Vdc Vdc Vdc -- -- 2.0 TIP47 TIP48 TIP50 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 1.0 0.2 0.5 1.0 D = 0.5 0.2 0.1 0.05 0.02 ZJC(t) = r(t) RJC RJC = 3.125C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZJC(t) 2.0 5.0 t, TIME (ms) 10 20 50 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1.0 k Figure 4. Thermal Response 5.0 IC, COLLECTOR CURRENT (AMPS) 2.0 1.0 0.5 0.2 0.1 TC 25C 100 s 1.0 ms dc SECONDARY BREAKDOWN LIMITED THERMALLY LIMITED @ 25C BONDING WIRE LIMITED CURVES APPLY BELOW RATED VCEO TIP47 TIP48 TIP50 500 500 s 0.05 0.02 5.0 100 200 10 20 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 150_C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 5. Active Region Safe Operating Area 5.0 V, TEMPERATURE COEFFICIENTS (mV/C) ts 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.05 0.1 0.2 0.5 IC, COLLECTOR CURRENT (AMPS) 1.0 2.0 tf TJ = 25C VCC = 200 V IC/IB = 5.0 +4.5 +3.5 +2.5 +1.5 +0.5 0 -0.5 -1.5 -2.5 0.02 VC FOR VCE(sat) +25C to +150C -55C to +25C +25C to +150C VB FOR VBE 0.05 0.1 0.2 0.5 -55C to +25C 1.0 2.0 *APPLIES FOR IC/IB hFE/5 t, TIME ( s) IC, COLLECTOR CURRENT (AMPS) Figure 6. Turn-Off Time Figure 7. Temperature Coefficients http://onsemi.com 3 TIP47 TIP48 TIP50 VCE MONITOR INPUT VOLTAGE TUT 100 mH VCC = 20 V IC MONITOR RS = 0.1 COLLECTOR CURRENT tw 3 ms (SEE NOTE A) 0V -5 V 0.63 A 0V VCER MJE171 INPUT 50 50 VBB1 = 10 V RBB1 = 150 RBB2 = 100 VBB2 = 0 100 ms COLLECTOR VOLTAGE Note A: Input pulse width is increased until ICM = 0.63 A. 10 V VCE(sat) Figure 8. Inductive Load Switching 200 100 hFE, DC CURRENT GAIN 60 40 20 10 6.0 4.0 2.0 0.02 0.4 0.6 0.04 0.06 0.1 0.2 IC, COLLECTOR CURRENT (AMPS) 1.0 2.0 VCE = 10 V TJ = 150C 25C -55C V, VOLTAGE (VOLTS) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.02 VCE(sat) @ IC/IB = 5.0 V 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 VBE(sat) @ IC/IB = 5.0 V VBE(on) @ VCE = 4 V IC, COLLECTOR CURRENT (AMPS) Figure 9. DC Current Gain Figure 10. "On" Voltages http://onsemi.com 4 TIP47 TIP48 TIP50 PACKAGE DIMENSIONS TO-220AB CASE 221A-09 ISSUE AA -T- B 4 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z BASE COLLECTOR EMITTER COLLECTOR INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 F T S C Q 123 A U K H Z L V G D N STYLE 1: PIN 1. 2. 3. 4. R J http://onsemi.com 5 TIP47 TIP48 TIP50 Notes http://onsemi.com 6 TIP47 TIP48 TIP50 Notes http://onsemi.com 7 TIP47 TIP48 TIP50 SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 TIP47/D |
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