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TLH.5800
Vishay Semiconductors
High Efficiency LED, o 5 mm Untinted Non-Diffused
Color Yellow Green Pure green Type TLHY5800 TLHG5800 TLHP5800 Technology GaAsP on GaP GaP on GaP GaP on GaP Angle of Half Intensity o 4 4 4
Description
The TLH.5800 series was developed for standard applications which need a very small radiation angle or a very high luminous intensity. It is housed in a 5 mm untinted non-diffused plastic package. The very small viewing angle of these devices provide a very high luminous intensity. The yellow and green LEDs are categorized in luminous intensity and additionally in wavelength groups. That allows users to assemble LEDs with uniform appearance.
94 8631
Features
D D D D D D D
Standard T-13/4 package Small mechanical tolerances Suitable for DC and high peak current Very small viewing angle Very high intensity Luminous intensity categorized Yellow and green color categorized
Applications
Status lights OFF / ON indicator Lightpipe Outdoor display Medical instruments Maintenance lights Legend lights
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified TLHY5800 ,TLHG5800 ,TLHP5800 , Parameter Reverse voltage DC forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Test Conditions Tamb 65C tp 10 ms Tamb 65C Symbol VR IF IFSM PV Tj Tamb Tstg Tsd RthJA Value 6 30 1 100 100 -40 to +100 -55 to +100 260 350 Unit V mA A mW C C C C K/W
t 5 s, 2 mm from body
Document Number 83013 Rev. A3, 04-Oct-00
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TLH.5800
Vishay Semiconductors Optical and Electrical Characteristics
Tamb = 25_C, unless otherwise specified Yellow (TLHY5800 ) Parameter Test Conditions Luminous intensity 1) IF = 20 mA Dominant wavelength IF = 10 mA Peak wavelength IF = 10 mA Angle of half intensity IF = 10 mA Forward voltage IF = 20 mA Reverse voltage IR = 10 mA Junction capacitance VR = 0, f = 1 MHz 1) in one Packing Unit I Min./ I Max. 0.5 V V Type Symbol IV ld lp VF VR Cj Min 100 581 Typ 250 585 4 2.4 15 50 Max 594 Unit mcd nm nm deg V V pF
3
6
v
Green (TLHG5800 ) Parameter Test Conditions Luminous intensity 1) IF = 20 mA Dominant wavelength IF = 10 mA Peak wavelength IF = 10 mA Angle of half intensity IF = 10 mA Forward voltage IF = 20 mA Reverse voltage IR = 10 mA Junction capacitance VR = 0, f = 1 MHz 1) in one Packing Unit I Min./ I Max. 0.5 V V Type Symbol IV ld lp VF VR Cj Min 400 562 Typ 700 565 4 2.4 15 50 Max 575 Unit mcd nm nm deg V V pF
3
6
v
Pure green
(TLHP5800 )
Type Symbol IV ld lp VF VR Cj Min 25 555 Typ 85 555 4 2.4 15 50 Max 565 Unit mcd nm nm deg V V pF
Parameter Test Conditions Luminous intensity 1) IF = 20 mA Dominant wavelength IF = 10 mA Peak wavelength IF = 10 mA Angle of half intensity IF = 10 mA Forward voltage IF = 20 mA Reverse voltage IR = 10 mA Junction capacitance VR = 0, f = 1 MHz 1) in one Packing Unit I Min./ I Max. 0.5 V V
3
6
v
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Document Number 83013 Rev. A3, 04-Oct-00
TLH.5800
Vishay Semiconductors Typical Characteristics (Tamb = 25_C, unless otherwise specified)
125 Iv rel - Relative Luminous Intensity PV - Power Dissipation ( mW ) 0 10 20 30
100
40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 0.6
75
50 25 0 0 20 40 60 80 100
95 10918
Tamb - Ambient Temperature ( C )
95 10022
Figure 1. Power Dissipation vs. Ambient Temperature
60 IF - Forward Current ( mA ) IF - Forward Current ( mA ) 50 40 30 20 10 0 0
95 10046
Figure 4. Rel. Luminous Intensity vs. Angular Displacement
1000 Yellow 100 tp/T=0.001 tp=10ms
10
1
0.1 20 40 60 80 100
95 10030
0
2
4
6
8
10
Tamb - Ambient Temperature ( C )
VF - Forward Voltage ( V )
Figure 2. Forward Current vs. Ambient Temperature
10000 Tamb IF - Forward Current ( mA ) 1000 tp/T=0.01 0.02 0.05 0.1 100 1 10 0.5 0.2 Iv rel - Relative Luminous Intensity
Figure 5. Forward Current vs. Forward Voltage
1.6 Yellow 1.2
v65C
0.8
0.4
1 0.01
95 10025
0 0.1 1 10 100
95 10031
IF=10mA 0 20 40 60 80 100 Tamb - Ambient Temperature ( C )
tp - Pulse Length ( ms )
Figure 3. Forward Current vs. Pulse Length
Figure 6. Rel. Luminous Intensity vs. Ambient Temperature
Document Number 83013 Rev. A3, 04-Oct-00
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TLH.5800
Vishay Semiconductors
2.4 Iv rel - Relative Luminous Intensity Yellow IF - Forward Current ( mA ) 2.0 1.6 1.2 0.8 0.4 0 10
95 10260
1000 Green 100
10 tp/T=0.001 tp=10ms
1
0.1 20 0.5 50 0.2 100 0.1 200 0.05 500 0.02 IF(mA) tp/T
95 10034
0
2
4
6
8
10
1
VF - Forward Voltage ( V )
Figure 7. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
10 Iv rel - Relative Luminous Intensity
Figure 10. Forward Current vs. Forward Voltage
1.6 Iv rel - Relative Luminous Intensity Green 1.2
Yellow 1
0.8
0.1
0.4 IF=10mA 0 20 40 60 80 100
0.01 1
95 10033
0 10 IF - Forward Current ( mA ) 100
95 10035
Tamb - Ambient Temperature ( C )
Figure 8. Relative Luminous Intensity vs. Forward Current
1.2 Iv rel - Relative Luminous Intensity 1.0 0.8 0.6 0.4 0.2 0 550
95 10039
Figure 11. Rel. Luminous Intensity vs. Ambient Temperature
2.4 Iv rel- Specific Luminous Intensity
Yellow
Green 2.0 1.6 1.2 0.8 0.4 0
570
590
610
630
650
95 10263
10
20
50
100
200
500
l - Wavelength ( nm )
IF - Forward Current ( mA )
Figure 9. Relative Luminous Intensity vs. Wavelength
Figure 12. Specific Luminous Intensity vs. Forward Current
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Document Number 83013 Rev. A3, 04-Oct-00
TLH.5800
Vishay Semiconductors
10 Iv rel - Relative Luminous Intensity Iv rel - Relative Luminous Intensity Green 2.0 Pure Green 1.6
1
1.2
0.1
0.8 0.4 0
0.01 1
95 10037
10 IF - Forward Current ( mA )
100
95 9991
0
20
40
60
80
100
Tamb - Ambient Temperature ( C )
Figure 13. Relative Luminous Intensity vs. Forward Current
1.2 Iv rel - Relative Luminous Intensity 1.0 0.8 0.6 0.4 0.2 0 520
95 10038
Figure 16. Rel. Luminous Intensity vs. Ambient Temperature
2.4 Iv rel- Specific Luminous Intensity
Green
Pure Green 2.0 1.6 1.2 0.8 0.4 0
540
560
580
600
620
95 10261
10
20
50
100
200
500
l - Wavelength ( nm )
IF - Forward Current ( mA )
Figure 14. Relative Luminous Intensity vs. Wavelength
100 Pure Green IF - Forward Current ( mA ) Iv rel - Relative Luminous Intensity
Figure 17. Specific Luminous Intensity vs. Forward Current
10 Pure Green
10
1
1
0.1
0.1 0
95 9988
0.01 1 2 3 4 5
95 9998
1
10 IF - Forward Current ( mA )
100
VF - Forward Voltage ( V )
Figure 15. Rel. Luminous Intensity vs. Ambient Temperature
Figure 18. Relative Luminous Intensity vs. Forward Current
Document Number 83013 Rev. A3, 04-Oct-00
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TLH.5800
Vishay Semiconductors
1.2 Iv rel - Relative Luminous Intensity Pure Green 1.0 0.8 0.6 0.4 0.2 0 500
95 10325
520
540
560
580
600
l - Wavelength ( nm )
Figure 19. Relative Luminous Intensity vs. Wavelength
Dimensions in mm
9511476
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Document Number 83013 Rev. A3, 04-Oct-00
TLH.5800
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 83013 Rev. A3, 04-Oct-00
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