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HiPerFASTTM IGBT ISOPLUS247TM
IXGR 40N60C2 IXGR 40N60C2D1
VCES IC25
C2-Class High Speed IGBTs
(Electrically Isolated Back Surface)
Preliminary Data Sheet
IXGR_C2 IXGR_C2D1
= = VCE(SAT) = tfi(typ =
600 V 56 A 2.7 V 32 ns
ISOPLUS 247TM (IXGR)
Symbol VCES VCGR VGES VGEM IC25 IC110 ID110 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 110C TC = 110C (40N60C2D1) TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 10 Clamped inductive load @ VCE 600 V TC = 25C
Maximum Ratings 600 600 20 30 56 26 27 200 ICM = 80 170 -55 ... +150 150 -55 ... +150 300 2500 20..120/4.5..25 4 V V V V A A A A A W C C C C V~ N/lb. g Advantages Easy assembly High power density Very fast switching speeds for high frequency applications Applications Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity G = Gate E = Emitter Features C = Collector
G C E ISOLATED TAB
Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s VISOL FC Weight Symbol Test Conditions 50/60 Hz, RMS, t = 1 minute, IISOL < 1 mA Mounting force
Characteristic Values (TJ = 25C unless otherwise specified) min. typ. max. 600 3.0 40N60C2 40N60C2/D1 5.0 50 100 100 TJ = 25C TJ = 125C 2.2 2.0 2.7 V V A A nA V V
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 250A, VGE = 0 V = 250 A, VCE = VGE
VCE = VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = 30 A, VGE = 15 V
(c) 2005 IXYS All rights reserved
DS99052C(10/05)
IXGR 40N60C2 IXGR 40N60C2D1
Symbol Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) min. typ. max. 20 36 2500 VCE = 25 V, VGE = 0 V, f = 1 MHz 40N60C2 40N60C2D1 180 220 54 95 IC = 30 A, VGE = 15 V, VCE = 0.5 VCES 14 36 18 Inductive load, TJ = 25C IC = 30 A, VGE = 15 V VCE = 400 V, RG = Roff = 3 20 90 32 0.20 18 Inductive load, TJ = 125C IC = 30 A, VGE = 15 V VCE = 400 V, RG = Roff = 3 20 40N60C2 40N60C2D1 0.3 0.6 130 80 0.50 (Note 1) (Note 2) 0.26 0.15 240 140 S pF pF pF pF nC nC nC ns ns ns ns 0.37 mJ ns ns mJ mJ ns ns mJ K/W 0.74 K/W K/W ISOPLUS 247 Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJ-DCB RthJC RthCS
IC = 30 A; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 %
Reverse Diode (FRED) (D1 Version Only) Symbol VF IRM t rr t rr RthJC RthCS Test Conditions IF = 30 A, VGE = 0 V, Pulse test t 300 s, duty cycle d 2 %
Characteristic Values (TJ = 25C unless otherwise specified) min. typ. max. TJ =150C TJ = 25C 100 25 1.6 2.5 4 V V A ns ns
IF = 30 A, VGE = 0 V, -diF/dt =100 A/s, TJ = 100C VR = 100 V IF = 1 A; -di/dt = 100 A/s; VR = 30 V
1.5 K/W 0.15 K/W
Notes: 1. RthJ-DCB is the thermal resistance junction-to-internal side of DCB substrate 2. RthJC is the thermal resistance junction-to-external side of DCB substrate
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2
IXGR 40N60C2 IXGR 40N60C2D1
Fig. 1. Output Characteristics @ 25 Deg. C
60 50 VG E = 15V 13V 11V 9V 1 80 1 50 21 0
Fig. 2. Extended Output Characteristics @ 25 deg. C
VG E = 15V 13V 11V 9V
I C - Amperes
7V
30 20
I C - Amperes
40
1 20 90 60 30
7V
1 0
5V
0 0.5 1 1 .5 2 2.5 3 3.5 0
5V 0 1 2 3 4 5 6 7
V C E - Volts
V C E - Volts
Fig. 3. Output Characteristics @ 125 Deg. C
60 50 VG E = 15V 13V 11V 9V 1 .2 1 .3
Fig. 4. Temperature Dependence of V CE(sat)
I C = 60A VG E = 15V
VC E (sat) - Normalized
1 .1 1 0.9 0.8 0.7 0.6
I C - Amperes
40 30 20
7V
I C = 30A
1 0 0 0.5 1 1 .5 2
5V
I C = 15A
2.5
3
25
50
75
1 00
1 25
1 50
V CE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emiiter voltage
4 T J = 25 C 3.5 3 21 0 1 80 1 50
Fig. 6. Input Admittance
I C - Amperes
VC E - Volts
1 20 90 60 30 0 T J = 125 C 25 C -40 C
2.5 2
I C = 60A
30A 1 .5 15A 1 5 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5
4
5
6
7
8
9
1 0
V G E - Volts
(c) 2005 IXYS All rights reserved
V G E - Volts
IXGR 40N60C2 IXGR 40N60C2D1
Fig. 7. Transconductance
70 60 50 T J = -40 C 25 C
Fig. 8. Dependence of Eoff on RG
1 .8 1 .6 1 .4 TJ = 125 C VG E = 15V VC E = 400V I C = 60A
E off - milliJoules
g f s - Siemens
125 C
1 .2 1 0.8 0.6 0.4
40 30 20 1 0 0 0 30 60 90 1 20 1 50 1 80
I C = 45A
I C = 30A
0.2 0 2 4 6 8 1 0
I C = 15A 1 2 1 4 1 6
I C - Amperes
R G - Ohms
Fig. 9. Dependence of Eoff on I c
1 .6 1 .4 R G = 3 Ohms R G= 10 Ohms - - - - VG E = 15V VC E = 400V 1 .6 1 .4 1 .2
Fig. 10. Dependence of Eoff on Temperature
R G = 3 Ohms R G = 10 Ohms - - - - VG E = 15V VC E = 400V I C = 60A
E off - MilliJoules
1 .2 1 0.8 0.6 0.4 0.2 0 1 0
E off - milliJoules
1 0.8 0.6 0.4 I C = 30A I C = 45A
T J = 125C
T J = 25C 20 30 40 50 60
0.2 I C = 15A 0 25 50 75 1 00 1 25
I C - Amperes
TJ - Degrees Centigrade
Fig. 11. Gate Charge
1 5 VC E = 300V I C = 30A I G = 10mA 1 0000
Fig. 12. Capacitance
f = 1M Hz
1 2
Capacitance - p F
C ies 1 000
VG E - Volts
9
6
C oes 1 00
3 C res 0 0 20 40 60 80 1 00 1 0 0 5 1 0 1 5 20 25 30 35 40
Q G - nanoCoulombs IXYS reserves the right to change limits, test conditions, and dimensions.
V C E - Volts
IXGR 40N60C2 IXGR 40N60C2D1
Fig. 13. Maximum Transient Thermal Resistance
0.8 0.7 0.6
R (th) J C - (C/W)
0.5 0.4 0.3 0.2 0.1 0 1 1 0 1 00 1 000
Pulse Width - milliseconds
(c) 2005 IXYS All rights reserved
IXGR 40N60C2 IXGR 40N60C2D1
60 A 50 IF 40 1000 T = 100C VJ nC VR = 300V 800 Qr 30 A 25 IRM 20 15 400 20 10
TVJ= 100C VR = 300V IF= 60A IF= 30A IF= 15A
IF= 60A IF= 30A IF= 15A
TVJ=150C
30
600
TVJ=100C TVJ=25C
10 0 0 1 2 VF 3V
200
5 0 A/s 1000 -diF/dt 0 200 400 600 A/s 1000 800 -diF/dt
0 100
Fig. 14. Forward current IF versus VF
Fig. 15. Reverse recovery charge Qr versus -diF/dt
90 ns
Fig. 16. Peak reverse current IRM versus -diF/dt
20 TVJ= 100C IF = 30A V VFR 15
2.0
TVJ= 100C VR = 300V
1.00
VFR
1.5 Kf 1.0
trr 80
tfr
tfr 0.75
s
IRM
70
IF= 60A IF= 30A IF= 15A
10
0.50
0.5
Qr
5
0.25
0.0 0 40 80 120 C 160 TVJ
60 0 200 400 600 -diF/dt 800 A/s 1000
0 0 200 400
0.00 600 A/s 1000 800 diF/dt
Fig. 17. Dynamic parameters Qr, IRM versus TVJ
1 K/W 1
Fig. 18. Recovery time trr versus -diF/dt
Fig. 19. Peak forward voltage VFR and tfr versus diF/dt
ZthJC - K/W
0.1 ZthJC 0.1
0.01 0.01
0.001 0.00001 0.001 0.0001
DSEP 29-06
0.0001
0.001
0.01
0.001
0.01 Time - Seconds
0.1 0.1
s t
1 1
Fig. 20. Transient thermal resistance junction to case
IXYS reserves the right to change limits, test conditions, and dimensions.

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