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| MCC Features * * * * * * omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMS8550 SOT-23 Plastic-Encapsulate Transistors Capable of 0.3Watts(Tamb=25 OC) of Power Dissipation. Collector-current 0.5A Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +150 OC Marking Code: 2TY PNP Silicon Plastic-Encapsulate Transistor SOT-23 A D ..com Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Collector-Base Breakdown Voltage (IC=100uAdc, IE =0) Collector-Emitter Breakdown Voltage (IC=0.1mAdc, IB =0) Emitter-Base Breakdown Voltage (IE =100uAdc, IC=0) Collector Cutoff Current (VCB=40Vdc, IE =0) Collector Cutoff Current (VCE=20Vdc, IB =0) Emitter Cutoff Current (VEB =3.0Vdc, IC=0) DC Current Gain (IC=50mAdc, V CE=1.0Vdc) DC Current Gain (IC=500mAdc, V CE=1.0Vdc) Collector-Emitter Saturation Voltage (IC=500mAdc, IB =50mAdc) Base-Emitter Saturation Voltage (IC=500mAdc, IB =50mAdc) Base- Emitter Voltage (IE =100mAdc) Transistor Frequency (IC=20mAdc, V CE=6.0Vdc, f=30MHz) Min 40 25 5.0 ------Max ------0.1 0.1 0.1 Units Vdc Vdc Vdc F E OFF CHARACTERISTICS V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO C B uAdc uAdc G H J uAdc DIMENSIONS ON CHARACTERISTICS hFE(1) hFE(2) VCE(sat) VBE(sat) VEB 120 50 ------350 --0.6 1.2 1.4 ----Vdc Vdc Vdc DIM A B C D E F G H J K INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE SMALL-SIGNAL CHARACTERISTICS fT 150 --MHz Suggested Solder Pad Layout .031 .800 .035 .900 CLASSIFICATION OF HFE (1) Rank Range L 120-200 H 200-350 .037 .950 .037 .950 .079 2.000 inches mm www.mccsemi.com Revision: 2 2003/04/30 |
Price & Availability of MMS8550
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