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HZN6.8ZMFA
Silicon Planar Zener Diode for Surge Absorb
ADE-208-1456 (Z) Rev.0 Nov. 2001 Features
* HZN6.8ZMFA has four devices in a monolithic, and can absorb surge. * VSON-5 Package is suitable for high density surface mounting.
Ordering Information
Type No. HZN6.8ZMFA Laser Mark 68( : Let to Month Code) Package Code VSON-5
Pin Arrangement
1 2
1. Cathode 2. Cathode 3. Cathode
5 4 3
4. Anode 5. Cathode
(Top View)
HZN6.8ZMFA
Absolute Maximum Ratings
(Ta = 25C)
Item Power dissipation Junction temperature Storage temperature Note: Symbol Pd * Tj Tstg
1
Value 150 150 -55 to +150
Unit mW C C
1. Four device total, See Fig.2.
Electrical Characteristics *1
(Ta = 25C)
Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability * *
2 3
Symbol VZ IR C rd --
Min 6.47 -- -- -- 25
Typ -- -- -- -- --
Max 7.00 0.5 25 30 --
Unit V A pF kV
Test Condition IZ = 5 mA, 40ms pulse VR = 3.5V VR = 0V, f = 1 MHz IZ = 5 mA C =150 pF, R = 330 , Both forward and reverse direction 10 pulse
Notes 1. Per one device. 2. Failure criterion ; IR > 0.5 A at VR = 3.5 V. 3. Between cathode and anode.
Month Code
Month of Manufacture January February March April May June Month Code A B C D E F Month of Manufacture July August September October November December Month Code G H J K L M
Rev.0, Nov. 2001, page 2 of 6
HZN6.8ZMFA
Main Characteristic
10-2 250
20h x 15w x 0.8t 0.3
Unit: mm
Zener Current IZ (A)
2.45
10-3
Power Dissipation Pd (mW)
1.0
1.75 1.5
150
With polyimide board
10-4
100
10-5
50
10-6
0
2
4
6
8
10
0 0 50 100 150 200
Zener Voltage VZ (V) Fig.1 Zener current vs. Zener voltage
Ambient Temperature Ta (C) Fig.2 Power Dissipation vs. Ambient Temperature
Nonrepetitive Surge Reverses Power PRSM (W)
104 PRSM t 10
3
Ta = 25C nonrepetitive
102
10
1.0
10-5
10-4
10-3 Time t (s)
10-2
10-1
1.0
Fig.3 Surge Reverse Power Ratings
Rev.0, Nov. 2001, page 3 of 6
3.0 3.8
200
HZN6.8ZMFA
Main Characteristic
104
Transient Thermal Impedance Zth (C/W)
103
102
10
1.0
10-2
10-1
1.0
10
102
103
Time t (s) Fig.4 Transient Thermal Impedance
Rev.0, Nov. 2001, page 4 of 6
HZN6.8ZMFA
Package Dimensions
Preliminary
0.2
1.6 0.05
As of July, 2001
(0.1)
5-
+0.1 0.2 -0.05
Unit: mm
1.6 0.05
1.2 0.1
0.2
0.5 1.0 0.1
0.5
0.6 MAX
(0.1)
Hitachi Code JEDEC JEITA Mass (reference value)
Rev.0, Nov. 2001, page 5 of 6
0.12 -0.05
VSON-5 0.002 g
+0.1
HZN6.8ZMFA
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
Sales Offices
Hitachi, Ltd.
Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109
URL
http://www.hitachisemiconductor.com/
For further information write to:
Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen Postfach 201, D-85619 Feldkirchen Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://semiconductor.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk
Copyright (c) Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.
Colophon 5.0
Rev.0, Nov. 2001, page 6 of 6

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