j/sst111 series vishay siliconix document number: 70232 s-04028?rev. e, 04-jun-01 www.vishay.com 7-1 n-channel jfets j111 sst111 j112 sst112 j113 sst113
part number v gs(off) (v) r ds(on) max ( ) i d(off) typ (pa) t on typ (ns) j/sst111 ?3 to ?10 30 5 4 j/sst112 ?1 to ?5 50 5 4 j/sst113 ?3 100 5 4
low on-resistance: 111 < 30 fast switching?t on : 4 ns low leakage: 5 pa low capacitance: 3 pf low insertion loss low error voltage high-speed analog circuit performance negligible ?off-error,? excellent accuracy good frequency response, low glitches eliminates additional buffering analog switches choppers sample-and-hold normally ?on? switches current limiters the j/sst111 series consists of all-purpose analog switches designed to support a wide range of applications. the j/sst113 are useful in a high-gain amplifier mode. the j series, to-226aa (to-92) plastic package, provides low cost, while the sst series, to236 (sot-23) package, provides surface-mount capability. both the j and sst series are available in tape-and-reel for automated assembly (see packaging information). for similar products in to-206aa(to-18) packaging, see the 2n/pn/sst4391 series, 2n4856a/4857a/4858a, and 2n5564/5565/5566 (duals) data sheets. to-226aa (to-92) top view j111 j112 j113 d g s 1 2 3 d s g to-236 (sot-23) 2 3 1 top view sst111 (c1)* sst112 (c2)* sst113 (c3)* *marking code for to-236
gate-drain, gate-source voltage ?35 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gate current 50 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . lead temperature ( 1 / 16 ? from case for 10 seconds) 300 c . . . . . . . . . . . . . . storage temperature ?55 to 150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating junction temperature ?55 to 150 c . . . . . . . . . . . . . . . . . . . . . . . . . . power dissipation a (to-236) 350 mw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (to-226aa) 360 mw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . notes a. derate 2.8 mw/ c above 25 c for applications information see an105.
j/sst111 series vishay siliconix www.vishay.com 7-2 document number: 70232 s-04028 ? rev. e, 04-jun-01
limits j/sst111 j/sst112 j/sst113 parameter symbol test conditions typ a min max min max min max unit static gate-source breakdown voltage v (br)gss i g = ? 1 a , v ds = 0 v ? 55 ? 35 ? 35 ? 35 v gate-source cutoff voltage v gs(off) v ds = 5 v, i d = 1 a ? 3 ? 10 ? 1 ? 5 ? 3 v saturation drain current b i dss v ds = 15 v, v gs = 0 v 20 5 2 ma v gs = ? 15 v, v ds = 0 v ? 0.005 ? 1 ? 1 ? 1 gate reverse current i gss t a = 125 c ? 3 na gate operating current i g v dg = 15 v, i d = 10 ma ? 5 pa v ds = 5 v, v gs = ? 10 v 0.005 1 1 1 drain cutoff current i d(off) t a = 125 c 3 na drain-source on-resistance r ds(on) v gs = 0 v, v ds = 0.1 v 30 50 100 gate-source forward voltage v gs(f) i g = 1 ma , v ds = 0 v 0.7 v dynamic common-source forward transconductance g fs v ds = 20 v, i d = 1 ma 6 ms common-source output conductance g os v ds = 20 v, i d = 1 ma f = 1 khz 25 s drain-source on-resistance r ds(on) v gs = 0 v, i d = 0 ma f = 1 khz 30 50 100 common-source input capacitance c iss v ds = 0 v, v gs = v 7 12 12 12 common-source reverse transfer capacitance c rss v ds = 0 v, v gs = v f = 1 mhz 3 5 5 5 pf equivalent input noise voltage e n v dg = 10 v, i d = 1 ma f = 1 khz 3 nv ? hz switching t d(on) 2 turn-on time t r v dd = 10 v, v gs(h) = 0 v 2 t d(off) v dd = 10 v, v gs(h) = 0 v see switching circuit 6 ns turn-off time t f 15 notes a. typical values are for design aid only, not guaranteed nor subject to production testing. ncb b. pulse test: pw 300 s duty cycle 3%.
j/sst111 series vishay siliconix document number: 70232 s-04028 ? rev. e, 04-jun-01 www.vishay.com 7-3 160 120 on-resistance and drain current vs. gate-source cutoff voltage on-resistance vs. drain current 100 0 ? 10 0 200 160 0 r ds i dss r ds @ i d = 1 ma , v gs = 0 i dss @ v ds = 20 v, v gs = 0 100 0 1 10 100 v gs(off) = ? 2 v ? 4 v ? 8 v t a = 25 c on-resistance vs. temperature 200 ? 55 25 125 0 ? 15 85 i d = 1 ma r ds changes x 0.7%/ c v gs(off) = ? 2 v ? 4 v ? 8 v turn-on switching 5 0 ? 10 4 3 2 1 0 t r switching time (ns) t d(on) @ i d = 3 ma t d(on) @ i d = 12 ma t r approximately independent of i d v dd = 5 v, r g = 50 ? v gs(l) = ? 10 v turn-off switching 30 010 24 18 12 6 0 t f @ v gs(off) = ? 2 v t f @ v gs(off) = ? 8 v t d(off) t d(off) independent of device v gs(off ) v dd = 5 v, v gs(l) = ? 10 v capacitance vs. gate-source voltage 30 ? 20 24 18 12 6 0 capacitance (pf) f = 1 mhz c iss @ v ds = 0 v c rss @ v ds = 0 v 0 v gs(off) ? gate-source cutoff voltage (v) t a ? temperature ( _c) v gs ? gate-source voltage (v) v gs(off) ? gate-source cutoff voltage (v) i d ? drain current (ma) i d ? drain current (ma) 80 60 40 20 80 40 80 60 40 20 ? 2 ? 4 ? 6 ? 8 ? 35 120 80 40 5 45 65 105 ? 2 ? 4 ? 6 ? 8 24 68 ? 4 ? 8 ? 12 ? 16 switching time (ns) r ds(on) ? drain-source on-resistance ( ? ) i dss ? saturation drain current (ma) r ds(on) ? drain-source on-resistance ( ? ) r ds(on) ? drain-source on-resistance ( ? )
j/sst111 series vishay siliconix www.vishay.com 7-4 document number: 70232 s-04028 ? rev. e, 04-jun-01 1 pa noise voltage vs. frequency 100 10 1 10 100 1 k 100 k 10 k i d = 10 ma forward transconductance and output conductance vs. gate-source cutoff voltage 50 0 0 ? 2 ? 10 500 250 0 g os ? output conductance g fs g os g fs and g os @ v ds = 20 v v gs = 0 v, f = 1 khz gate leakage current 030 1 na 100 pa 10 pa 0.1 pa t a = 125 c t a = 25 c 1 ma i gss @ 25 c 10 na i d = 10 ma common-gate input admittance 100 10 1 0.1 100 1000 200 500 (ms) g ig b ig v dg = 10 v i d = 10 ma t a = 25 c common-gate forward admittance common-gate reverse admittance 100 10 1 0.1 100 1000 200 500 (ms) ? g fg b fg g fg v dg = 10 v i d = 10 ma t a = 25 c 10 1.0 0.1 0.01 100 1000 200 500 v dg = 10 v i d = 10 ma t a = 25 c ? g rg ? b rg +g rg (ms) v dg ? drain-gate voltage (v) v gs(off) ? gate-source cutoff voltage (v) f ? frequency (hz) f ? frequency (mhz) f ? frequency (mhz) f ? frequency (mhz) 40 30 20 10 ? 4 ? 6 ? 8 i gss @ 125 c 10 ma 1 ma 6 121824 v ds = 10 v i d = 1 ma (ms) g fs ? forward transconductance (ms) e n ? noise voltage nv / hz i g ? gate leakage
j/sst111 series vishay siliconix document number: 70232 s-04028 ? rev. e, 04-jun-01 www.vishay.com 7-5 output characteristics 100 010 80 60 40 20 0 v ds ? drain-source voltage (v) 24 68 common-gate output admittance 100 10 1 0.1 100 1000 200 500 (ms) v dg = 10 v i d = 10 ma t a = 25 c f ? frequency (mhz) output characteristics 40 0 1.0 32 24 16 8 0 v ds ? drain-source voltage (v) 0.2 0.4 0.6 0.8 transfer characteristics 100 0 ? 5 80 60 40 20 0 v gs ? gate-source voltage (v) ? 1 ? 2 ? 3 ? 4 g og b og v gs = 0 v ? 0.5 ? 1.0 ? 1.5 ? 2.0 ? 2.5 v gs(off) = ? 4 v v gs(off) = ? 4 v v gs = 0 v ? 0.5 ? 1.0 ? 1.5 ? 2.0 ? 2.5 ? 3.0 v gs(off) = ? 4 v t a = ? 55 c 25 c 125 c v ds = 20 v i d ? drain current (ma) i d ? drain current (ma) i d ? drain current (ma)
j/sst111 j/sst112 j/sst113 v gs(l) ? 12 v ? 7 v ? 5 v r l * 800 1600 3200 i d(on) 12 ma 6 ma 3 ma *non-inductive
rise time < 1 ns fall time < 1 ns pulse width 100 ns prf 1 mhz rise time 0.4 ns input resistance 10 m input capacitance 1.5 pf 51 51 1 k v gs scope v dd r l out v gs(h) v gs(l)
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