gaas spst high isolation switch, +3 volt, 0.5 - 2.0 ghz SW-399 m/a-com division of amp incorporated q north america: tel. (800) 366-2266, fax (800) 618-8883 q asia/pacific: tel.+85 2 2111 8088, fax +85 2 2111 8087 q europe: tel. +44 (1344) 869 595, fax+44 (1344) 300 020 www.macom.com amp and connecting at a higher level are trademarks. specifications subject to change without notice. v2.00 features high isolation: 43 db up to 2 ghz low cost plastic sot-26 package low insertion loss: <1.5 db positive control: +3 to +8 v sot-26 1 electrical s p ecifications: t a = +25c 1 gaas spst hi g h isolation switch, +3 volt 0.5 - 2.0 ghz SW-399 parameter test conditions units min. typ. max. insertion loss 0.5 - 2.0 ghz db 1.3 1.6 isolation 0.5 - 2.0 ghz db 40 42 vswr 0.5 - 2.0 ghz 1.5:1 1 db compression input power +3v control/supply 0.5 - 2.0 ghz dbm 25 input power +5v control/supply 0.5 - 2.0 ghz dbm 26 t rise , t fall 10% to 90% rf, 90% to 10% rf m s 3 t on , t off 50% control to 90% rf, control to 10% rf m s 110 t ransients in-band mv 26 input ip 2 2-tone, 5 mhz spacing 0.5 ghz dbm 59 +10 dbm each 0.9 ghz dbm 68 input ip 3 2-tone, 5 mhz spacing 0.5 ghz dbm 48 +10 dbm each 0.9 ghz dbm 49 descri p tion m/a-coms SW-399 is a gaas monolithic switch in a low cost sot-26 surface mount plastic package. the SW-399 is ideally suited for applications where very low power consumption (<10 m a@5v), low intermodulation products, very small size and low cost are required. the SW-399 is a general purpose rf switch which can be used in systems such as cellular, pcm, gsm and other analog/digital wireless communications sys- tems. the SW-399 is a gaas mmic using a mature 1-micron gate length gaas mesfet process. the process features full chip passivation for increased performance and reliability. orderin g information part number package SW-399 pin sot-26 plastic package SW-399tr forward tape and reel 1 1. refer to application note m513 for reel size information. 1. all measurements at 1 ghz in a 50 w system with a 3v control unless otherwise specified. loss varies at 0.003 db/c. pin 1 xx#y 1. dimensions are in: inches/mm
gaas spst high isolation switch, +3 volt, 0.5 - 2.0 ghz SW-399 m/a-com division of amp incorporated q north america: tel. (800) 366-2266, fax (800) 618-8883 q asia/pacific: tel.+85 2 2111 8088, fax +85 2 2111 8087 q europe: tel. +44 (1344) 869 595, fax+44 (1344) 300 020 www.macom.com amp and connecting at a higher level are trademarks. specifications subject to change without notice. v2.00 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 0.5 1 1.5 2 2.5 3 frequency (ghz) vswr input output 0 10 20 30 40 50 60 0.511.522.53 frequency (ghz) isolation (db) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0.5 1 1.5 2 2.5 3 frequency (ghz) insertion loss (db) parameter absolute maximum input power +34 dbm operating voltage (v s , v ctrl )+8.5 volts operating temperature -40c to +85c storage temperature -65c to +150c absolute maximum ratin g s 1 1. exceeding any one or a combination of these limits may cause permanent damage. t yp ical performance curves insertion loss vs. frequency vswr vs. frequency isolation vs frequency functional schematic 1 control rf1 to rf2 0off 1on truth table 0 = 00.2 vdc 1 = vs 0.2 vdc vs = +3 to +5 vdc 1. blocking capacitors are required on all rf ports. v s can be applied at rf1 or rf2 using 10k or greater pull-up resistor. rf2 rf1 gnd gnd ctrl pin rf gnd cap vs gnd
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