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| SI4806DY vishay siliconix document number: 70657 s-00652erev. c, 27-mar-00 www.vishay.com faxback 408-970-5600 2-1 n-channel 30:1 ratio dual-gate 30-v (d-s) mosfet v ds (v) r ds(on) ( ) i d (a) gate 1 30 0.022 @ v gs = 10 v 7.7 gate 1 30 0.03 @ v gs = 4.5 v 6.4 gate 2 30 0.25 @ v gs = 10 v 2.0 gate 2 0.40 @ v gs = 4.5 v 1.5 d g 1 s n-channel mosfet so-8 5 6 7 8 top view 2 3 4 1 g 2 nc g 1 d sd sd g 2 parameter symbol gate 1 gate 2 unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current ( t j = 150 c ) a t a = 25 c i d 7.7 6.4 a continuous drain current (t j = 150 c) a t a = 70 c i d 4.4 6.0 a pulsed drain current i dm 40 4.0 a continuous source current (diode conduction) a i s 2 maximum power dissipation a t a = 25 c p d 2.3 w maximum power dissipation a t a = 70 c p d 1.0 w operating junction and storage temperature range t j , t stg 55 to 150 c parameter symbol limit unit maximum junction-to-ambient a r thja 55 c/w notes a. surface mounted on fr4 board, t 10 sec. SI4806DY vishay siliconix www.vishay.com faxback 408-970-5600 2-2 document number: 70657 s-00652erev. c, 27-mar-00 parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a zero gate v oltage drain current i dss v ds = 30 v, v gs = 0 v, t j = 55 c 5 a on-state drain current a i d(on) (g 1 = g 2 ) v ds = 5 v, v gs = 10 v 40 a dis os r i a r ds1( ) (g 1 = g 2 ) v gs = 10 v, i d = 7.7 a 0.017 0.022 drain source on state resistance a r ds1(on) (g 1 = g 2 ) v gs = 4.5 v, i d = 6.4 a 0.021 0.03 drain-source on-state resistance a r ds2(on) v g1s = 0 v, v g2s = 10 v, i d = 2.0 a 0.20 0.25 r ds2(on) v g1s = 0 v, v g2s = 4.5 v, i d = 0.3 a 0.30 0.40 forward transconductance a g fs v ds = 15 v, i d = 7.7 a 21 s diode forward voltage a v sd i s = 2 a, v gs = 0 v 0.72 1.1 v dynamic b total gate charge q g gate 1 gate 1 34 60 c total gate charge q g gate 1 v ds = 15 v, v gs(1, 2) = 10 v i d =77a gate 2 2.2 5 c gate - source charge q gs i d = 7 . 7 a gate 1 6.5 nc gate - source charge q gs gate 2 gate 2 0.5 nc gate - drain charge q gd gate 2 v ds = 15 v, v gs(1) = 0 v v gs(2) =10v i d =20a gate 1 5.2 gate - drain charge q gd v gs(2) = 10 v , i d = 2 . 0 a gate 2 0.28 turn-on delay time t d(on) v15vr15 12 15 rise time t r v dd = 15 v, r l = 15 i 1 a v 10 v r 6 9 20 turn-off delay time t d(off) dd , l i d 1 a, v gen = 10 v, r g = 6 55 80 ns fall time t f 15 30 source-drain reverse recovery time t rr i f = 2 a, di/dt = 100 a/ s 40 60 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. SI4806DY vishay siliconix document number: 70657 s-00652erev. c, 27-mar-00 www.vishay.com faxback 408-970-5600 2-3 0 8 16 24 32 40 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 500 1000 1500 2000 2500 3000 3500 0 6 12 18 24 30 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 50 0 50 100 150 0 8 16 24 32 40 0246810 0 2 4 6 8 10 0 7 14 21 28 35 0 0.01 0.02 0.03 0.04 0.05 0 8 16 24 32 40 output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds drain-to-source voltage (v) drain current (a) i d v gs = 10 thru 4 v v gs gate-to-source voltage (v) drain current (a) i d t c = 125 c 55 c gate-to-source voltage (v) q g total gate charge (nc) v ds drain-to-source voltage (v) c capacitance (pf) v gs c rss c oss c iss v ds = 15 v i d = 7.7 a on-resistance ( r ds(on) ) i d drain current (a) capacitance on-resistance vs. junction temperature v gs = 10 v i d = 7.7 a t j junction temperature ( c) (normalized) on-resistance ( r ds(on) ) v gs = 10 v v gs = 4.5 v 3 v 25 c 2, 1 v SI4806DY vishay siliconix www.vishay.com faxback 408-970-5600 2-4 document number: 70657 s-00652erev. c, 27-mar-00 0 10 20 30 40 50 60 power (w) 1.0 0.8 0.6 0.4 0.2 0.0 0.2 0.4 0.6 50 0 50 100 150 0 0.02 0.04 0.06 0.08 0.10 0246810 source-drain diode forward voltage on-resistance vs. gate-to-source voltage threshold voltage single pulse power normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) 2 1 0.1 0.01 10 4 10 3 10 2 10 1 1 normalized effective transient thermal impedance 30 on-resistance ( r ds(on) ) v sd source-to-drain voltage (v) v gs gate-to-source voltage (v) source current (a) i s t j temperature ( c) time (sec) variance (v) v gs(th) 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 t j = 150 c t j = 25 c i d = 7.7 a i d = 250 a 0.01 40 1 10 0 0.2 0.4 0.6 0.8 1.0 1.4 1.2 30 0.1 1 10 10 1. duty cycle, d = 2. per unit base = r thja = 55 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm SI4806DY vishay siliconix document number: 70657 s-00652erev. c, 27-mar-00 www.vishay.com faxback 408-970-5600 2-5 0 2 4 6 8 10 0 0.4 0.8 1.2 1.6 2.0 gate charge gate-to-source voltage (v) q g total gate charge (nc) v gs v ds = 15 v i d = 0.4 a 0 0.2 0.4 0.6 0.8 012345 on-resistance vs. drain current on-resistance ( r ds(on) ) i d drain current (a) v gs = 10 v v gs = 4.5 v 0 1 2 3 4 5 6 7 0246810 output characteristics v ds drain-to-source voltage (v) drain current (a) i d v gs = 10 thru 6 v 4 v 3 v 2, 1 v 5 v 0 0.4 0.8 1.2 1.6 2.0 0246810 on-resistance vs. gate-to-source voltage on-resistance ( r ds(on) ) v gs gate-to-source voltage (v) i d = 400 ma |
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