transistors 1 publication date: february 2003 sjc00138bed 2SC3829 silicon npn epitaxial planar type for uhf band low-noise amplification features ? low noise figure nf ? high gain ? high forward transfer gain ? s 21e ? 2 ? mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing absolute maximum ratings t a = 25 c parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = 10 a, i e = 015v collector-emitter voltage (base open) v ceo i c = 100 a, i b = 010 v collector-base cutoff current (emitter open) i cbo v cb = 10 v, i e = 01 a emitter-base cutoff current (collector open) i ebo v eb = 2 v, i c = 01 a forward current transfer ratio h fe v ce = 8 v, i c = 20 ma 50 150 300 ? transition frequency f t v ce = 8 v, i c = 20 ma, f = 0.8 ghz 5 6 ghz collector output capacitance c ob v cb = 10 v, i e = 0, f = 1 mhz 0.7 1.2 pf (common base, input open circuited) forward transfer gain ? s 21e ? 2 v ce = 8 v, i c = 20 ma, f = 0.8 ghz 10.0 13.5 db maximum unilateral power gain g um v ce = 8 v, i c = 20 ma, f = 0.8 ghz 15 db noise figure nf v ce = 8 v, i c = 20 ma, f = 0.8 ghz 2 db electrical characteristics t a = 25 c 3 c unit: mm parameter symbol rating unit collector-base voltage (emitter open) v cbo 15 v collector-emitter voltage (base open) v ceo 10 v emitter-base voltage (collector open) v ebo 2v collector current i c 80 ma collector power dissipation p c 200 mw junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c marking symbol: 3m note) measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 0.40 +0.10 ?0.05 (0.65) 1.50 +0.25 ?0.05 2.8 +0.2 ?0.3 2 1 3 (0.95) (0.95) 1.9 0.1 2.90 +0.20 ?0.05 0.16 +0.10 ?0.06 0.4 0.2 5? 10? 0 to 0.1 1.1 +0.2 ?0.1 1.1 +0.3 ?0.1 1: base 2: emitter 3: collector eiaj: sc-59 mini3-g1 package
2SC3829 2 sjc00138bed v ce(sat) ? i c h fe ? i c f t ? i c p c ? t a i c ? v ce i c ? v be c ob ? v cb g um ? i c nf ? i c 0 160 40 120 80 0 240 200 160 120 80 40 collector power dissipation p c ( mw ) ambient temperature t a ( c ) 012 10 8 26 4 0 24 20 16 12 8 4 t a = 25 c 180 a 160 a 140 a 120 a 100 a 80 a 60 a 40 a 20 a i b = 200 a collector current i c ( ma ) collector-emitter voltage v ce ( v ) 0 2.0 1.6 0.4 1.2 0.8 0 120 100 80 60 40 20 v ce = 8 v t a = 75 c ? 25 c 25 c base-emitter voltage v be ( v ) collector current i c ( ma ) 0.1 1 10 100 0.01 0.1 1 10 100 i c / i b = 10 t a = 75 c 25 c ? 25 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) 0.1 1 10 100 0 600 500 400 300 200 100 v ce = 8 v t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c ( ma ) 0.1 1 10 100 0 12 10 8 6 4 2 v ce = 8 v f = 800 mhz t a = 25 c transition frequency f t ( ghz ) collector current i c ( ma ) 0.1 1 10 100 0 2.4 2.0 1.6 1.2 0.8 0.4 collector output capacitance (common base, input open circuited) c ob (pf) i e = 0 f = 1 mhz t a = 25 c collector-base voltage v cb ( v ) 0.1 1 10 100 0 24 20 16 12 8 4 v ce = 8 v f = 800 mhz t a = 25 c maximum unilateral power gain g um ( db ) collector current i c ( ma ) 0.1 1 10 100 0 12 10 8 6 4 2 v ce = 8 v (r g = 50 ? ) f = 800 mhz t a = 25 c noise figure nf ( db ) collector current i c ( ma )
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