1 file number 4564.4 HS-4423RH, hs-4423brh radiation hardened dual, inverting power mosfet drivers the radiation hardened HS-4423RH and the hs-4423brh are inverting, dual, monolithic high-speed mosfet drivers designed to convert ttl level signals into high current outputs at voltages up to 18v. the inputs of these devices are ttl compatible and can be directly driven by our hs-1825arh pwm device or by our acs/acts and hcs/hcts type logic devices. the fast rise times and high current outputs allow very quick control of high gate capacitance power mosfets, like our rad hard fs055, in high frequency applications. the high current outputs minimize power losses in mosfets by rapidly charging and discharging the gate capacitance. the output stage incorporates a low voltage lock-out circuit that puts the outputs into a three-state mode when the supply voltage drops below 10v for the HS-4423RH and 7.5v for the hs-4423brh. constructed with the intersil dielectrically isolated rad hard silicon gate (rsg) bicmos process, these devices are immune to single event latch-up and have been speci?ally designed to provide highly reliable performance in harsh radiation environments speci?ations for rad hard qml devices are controlled by the defense supply center in columbus (dscc). the smd numbers listed here must be used when ordering. detailed electrical speci?ations for these devices are contained in smd 5962-99511. a ?ot-link?is provided on our homepage for downloading. www.intersil.com/spacedefense/space.asp pinout HS-4423RH, hs-4423brh (flatpack cdfp4-f16) top view note: pins 4 and 5, 10 and 11, 12 and 13, 14 and 15 are double- bonded to their same electrical points on the die. features electrically screened to desc smd # 5962-99511 qml quali?d per mil-prf-38535 requirements radiation environment - total dose (max). . . . . . . . . . . . . . . . . . 3 x 10 5 rad(si) - latch-up immune - low dose rate immune ? peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >2a (typ) matched rise and fall times (c l = 4300pf) . . . 75ns (max) low voltage lock-out feature - HS-4423RH . . . . . . . . . . . . . . . . . . . . . . . . . . . . <10.0v - hs-4423brh . . . . . . . . . . . . . . . . . . . . . . . . . . . . <7.5v wide supply voltage range. . . . . . . . . . . . . . . 12v to 18v prop delay . . . . . . . . . . . . . . . . . . . . . . . . . . . 250ns (max) consistent delay times with v cc changes low power consumption - 40mw with inputs high - 20mw with inputs low low equivalent input capacitance . . . . . . . . . .3.2pf (typ) esd protected . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4000v applications switching power supplies dc/dc converters motor controllers nc in a nc gnd a gnd b nc in b nc 2 3 4 5 6 7 8 116 15 14 13 12 11 10 9 nc out a out a v cc v cc out b out b nc ordering information ordering number internal mkt. number temp. range ( o c) 5962f9951101vxc hs9-4423rh-q -55 to 125 5962f9951101qxc hs9-4423rh-8 -55 to 125 hs9-4423rh/proto hs9-4423rh/proto -55 to 125 5962f9951102vxc hs9-4423brh-q -55 to 125 5962f9951102qxc hs9-4423brh-8 -55 to 125 hs9-4423brh/proto hs9-4423brh/proto -55 to 125 data sheet june 1999 caution: these devices are sensitive to electrostatic discharge; follow proper ic handling procedures. 1-888-intersil or 321-724-7143 | copyright intersil corporation 1999
2 all intersil semiconductor products are manufactured, assembled and tested under iso9000 quality systems certi?ation. intersil semiconductor products are sold by description only. intersil corporation reserves the right to make changes in circuit design and/or spec ifications at any time with- out notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnished by intersil is b elieved to be accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of th ird parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiari es. for information regarding intersil corporation and its products, see web site www.intersil.com die characteristics die dimensions: 4890 m x 3370 m (193 mils x 133 mils) thickness: 483 m 25.4 m (19 mils 1 mil) interface materials: glassivation: type: psg (phosphorous silicon glass) thickness: 8.0k? 1.0k? top metallization: type: alsicu thickness: 16.0k? 2k? substrate: radiation hardened silicon gate, dielectric isolation backside finish: silicon assembly related information: substrate potential: unbiased (di) additional information: worst case current density: <2.0 x 10 5 a/cm 2 transistor count: 125 metallization mask layout HS-4423RH, hs-4423brh gnd (5) in b (7) out b (10) out b (11) v cc (12) v cc (13) gnd (4) in a (2) out a (15) out a (14) HS-4423RH, hs-4423brh
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