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CHS04XPT c h e n m k o e n t e r p r i s e c o . , l t d s u r f a c e m o u n t s c h o t t k y d i o d e v o l t a g e 40 v o l t s c u r r e n t 1 ampere a p p l i c a t i o n f e a t u r e * suitable for high packing density. construction * silicon epitaxial planar * u l t r a h i g h s p e e d s w i t c h i n g e l e c t r i c a l c h a r a c t e r i s t i c s ( a t t a = 2 5 o c u n l e s s o t h e r w i s e n o t e d ) 2 0 04 -5 m a x i m u m a v e r a g e r e v e r s e c u r r e n t a t v r = 40 v c h a r a c t e r i s t i c s symbol u n i t s 0.55 1.0 mamps v o l t s m a x i m u m i n s t a n t a n e o u s f o r w a r d v o l t a g e a t i f = 1.0a r a t i n g s m a x i m u m r e c u r r e n t p e a k r e v e r s e v o l t a g e m a x i m u m r m s v o l t a g e m a x i m u m d c b l o c k i n g v o l t a g e maximum average forward rectified current peak forward surge current at 1sec. storage temperature range maximum operating temperature range s y m b o l v r r m v r m s v d c i o t j v f i r t stg i fsm CHS04XPT CHS04XPT u n i t s 40 v o l t s v o l t s v o l t s amps 28 40 1 10 +150 -65 to +150 amps o c o c * peak forward current is 10a. c i r c u i t d i m e n s i o n s i n m i l l i m e t e r s s c - 6 2 / s o t - 8 9 s c - 6 2 / s o t - 8 9 1 2 3 1anode 2 cathode 3anode 1 . 7 m a x . 4 . 6 m a x . 4 . 6 m a x . 0 . 4 + 0 . 0 5 1 . 6 m a x . 2 . 5 + 0 . 1 0 . 8 m i n . + 0 . 0 8 0 . 4 5 - 0 . 0 5 + 0 . 0 8 0 . 4 0 - 0 . 0 5 1 . 5 0 + 0 . 1 + 0 . 0 8 0 . 4 0 - 0 . 0 5 1 . 5 0 + 0 . 1 3 2 1

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