ghz technology inc. reserves the right to make changes without further notice. ghz recommends that before the product(s) described herein are written into specifications, or used in critical applications, that the performance characteristics be verified by contacting the factory. ghz technology inc. 3000 oakmead village drive, santa clara, ca 95051-0808 tel. 408 / 986-8031 fax 408 / 986-8120 9BSE55 55 watts, 25 volts cellular 850-960 mhz general description the 9BSE55 is a common base, silicon bipolar transistor capable of providing 55 watts of output power at 960 mhz. the device is designed for cellular base station applications in the 850 to 960 mhz frequency range. gold metallization and emitter ballasting provide a highly reliable and rugged device which can be used for driver stages or in the output stage of an amplifier. case outline 55cw, style 1 absolute maximum ratings maximum power dissipation @ 25 c1 135 watts o maximum voltage and current bvces collector to emiter voltage 50 volts bvebo emitter to base voltage 4.0 volts ic collector current 8.0 a maximum temperatures storage temperature - 65 to +150 c o operating junction temperature +200 c o electrical characteristics @ 25 c 1 o symbol characteristics test conditions min typ max units pout pin pg2 h c2 vswr2 power output power input power gain collector efficiency load mismatch tolerance f = 900 mhz vcc = 25 volts 55 8.9 60 9.3 55 7.0 4.4:1 watts watts db % bvebo bvces ccb h fe q jc voltage emitter to base voltage collector to emitter capacitance collector to base dc - current gain thermal resistance ie = 15 ma ic = 50 ma ic = 3 ma, vce = 5v 4.0 50 10 50 1.3 volts volts pf c/w o note 1: tc = 25 ( c unless otherwise noted note 2: at rated output power initial issue march 1995
9BSE55
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