6-442 cascadable silicon bipolar mmic amplifier technical data features ? high output power: +27 dbm typical p 1db at 1.0 ghz ? low distortion: 37 dbm typical ip 3 at 1.0 ghz ? 8.5 db typical gain at 1.0 ghz ? impedance matched to 25 w for push-pull configurations msa-1000 chip outline [1] description the msa-1000 is a high perfor- mance, medium power silicon bipolar monolithic microwave integrated circuit (mmic) chip. this mmic is designed for use in a push-pull configuration in a 25 w system. the msa-1000 can also be used as single-ended amplifier in a 50 w system with slightly reduced performance. typical applications include narrow and broadband rf typical push-pull biasing configuration note: 1. refer to the applications section silicon mmic chip use for additional information. c block c block c fbl c fbl c block c block r bias r bias v cc > 20 v v d = 15 v rfc 50 rfc in out v cc > 20 v msa msa 4 1 1 2 2 3 3 4 50 amplifiers in industrial and military systems. the msa-series is fabricated using hps 10 ghz f t , 25 ghz f max , silicon bipolar mmic process which uses nitride self-alignment, ion implantation, and gold metalli- zation to achieve excellent performance, uniformity and reliability. the use of an external bias resistor for temperature and current stability also allows bias flexibility. the recommended assembly procedure is gold-eutectic die attach at 400 c and either wedge or ball bonding using 0.7 mil gold wire. this chip is intended to be used with an external blocking capaci- tor completing the shunt feedback path (closed loop). data sheet characterization is given for a 80 pf capacitor. low frequency performance can be extended by using a larger valued capacitor. [1] 1 3 22 2 4 2 ak 5965-9553e
6-443 msa-1000 absolute maximum ratings parameter absolute maximum [1] device current 425 ma power dissipation [2,3] 7.0 w rf input power +25 dbm junction temperature 200 c storage temperature C65 to 200 c thermal resistance [2,4] : q jc = 10 c/w part number ordering information part number devices per tray MSA-1000-GP4 100 g p power gain (|s 21 | 2 ) f = 1.0 ghz db 8.5 d g p gain flatness f = 0.1 to 2.0 ghz db 0.6 f 3 db 3 db bandwidth [3] ghz 2.6 input vswr f = 0.1 to 2.0 ghz 2.0:1 output vswr f = 0.1 to 2.0 ghz 2.5:1 nf 25 w noise figure f = 1.0 ghz db 7.0 p 1 db output power at 1 db gain compression f = 1.0 ghz dbm 27.0 ip 3 third order intercept point f = 1.0 ghz dbm 37.0 t d group delay f = 1.0 ghz psec 175 v d device voltage v 13.5 15.0 16.5 dv/dt device voltage temperature coefficient mv/ c C18.0 notes: 1. the recommended operating current range for this device is 150 to 400 ma. typical performance as a function of current is on the following page. 2. rf performance of the chip is determined by packaging and testing 10 devices per wafer. 3. referenced from 0.1 ghz gain (g p ). electrical specifications [1] , t a = 25 c symbol parameters and test conditions [2] : i d = 325 ma, z o = 25 w units min. typ. max. vswr notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t mounting surface (t ms ) = 25 c. 3. derate at 100 mw/ c for t mounting surface > 130 c. 4. the small spot size of this technique results in a higher, though more accurate determination of q jc than do alternate methods.
6-444 msa-1000 typical scattering parameters [1,2] (z = 50 w , t a = 25 c, i d = 325 ma) freq. ghz mag ang db mag ang db mag ang mag ang k 0.001 .41 C121 15.5 5.95 149 C17.7 .130 22 .43 C99 0.68 0.005 .52 C167 8.7 2.73 156 C15.7 .164 6 .48 C161 1.02 0.010 .54 C174 7.7 2.41 166 C15.6 .166 3 .46 C171 1.12 0.050 .54 C179 7.3 2.31 174 C15.7 .165 1 .46 C178 1.17 0.100 .55 179 7.2 2.30 173 C15.7 .165 C1 .46 C179 1.17 0.200 .55 178 7.2 2.30 168 C15.7 .165 C1 .47 177 1.16 0.400 .54 176 7.2 2.29 157 C15.7 .165 C3 .48 176 1.16 0.600 .52 174 7.2 2.30 146 C15.8 .163 C4 .48 174 1.16 0.800 .51 174 7.2 2.29 134 C15.8 .161 C5 .48 173 1.15 1.000 .50 172 7.2 2.29 121 C15.9 .160 C5 .49 172 1.12 1.200 .48 173 7.2 2.28 108 C16.0 .158 C6 .49 172 1.10 1.400 .47 175 7.1 2.26 96 C16.2 .155 C7 .50 174 1.05 1.600 .46 178 6.8 2.20 83 C16.3 .153 C7 .51 175 1.00 1.800 .46 179 6.4 2.09 62 C16.5 .150 C8 .53 176 0.94 2.000 .48 C177 6.0 1.99 56 C16.6 .148 C10 .65 C179 0.68 2.500 .56 C170 4.4 1.65 35 C17.0 .141 C1 .54 178 .91 3.000 .61 C171 2.7 1.36 12 C16.7 .147 1 .69 C176 .52 notes: 1. s-parameters are de-embedded from 100 mil beo package measured data using the package model found in the device models section. 2. s-parameter data assumes an external 80 pf capacitor. low frequency performance can be extended using a larger valued capacitor. s 11 s 21 s 12 s 22
6-445 msa-1000 bonding diagram msa die 1 4 2 3 a10 input trace numbers refer to pin contacts listed on the chip outline. capacitor (80 pf typ) ground output trace (backside contact) 2 2 2 gain (db) 18 16 20 22 26 28 24 30 32 power out (dbm) figure 1. typical gain vs. power out, z o = 25 , i d = 325 ma. 200 150 250 300 350 400 i d (ma) figure 2. output power at 1 db gain compression, third order intercept point vs. current, z o = 25 , f=1.0ghz. 0 2 4 6 8 10 20 24 28 36 32 40 0.5 ghz 0.5 ghz figure 3. output power at 1 db gain compression vs. case temperature, z o = 25 , i d = 325 ma. frequency (ghz) figure 4. gain vs. frequency, i d = 325 ma. 0.1 0.2 0.3 0.5 2.0 1.0 3.0 0 16 20 12 8 4 gain (db) open loop 20 22 24 26 28 30 32 +25 ?0 +100 p 1 db (dbm) temperature ( c) 2.0 ghz 1.0 ghz, 4.0 ghz 1.0 ghz p 1 db closed loop 1.0 ghz 1.5 ghz 2.0 ghz p 1 db (dbm) ip 3 (dbm) ip 3 z o = 50 typical performance, t a = 25 c (unless otherwise noted) msa-1000 chip dimensions 1 3 22 2 4 2 ak 917 m 36.1 mil 495 m 19.5 mil unless otherwise specified, tolerances are 13 m/ 0.5 mils. chip thickness is 114 m / 4.5 mil. bond pads are 41 m / 1.6 mil typical on each side. note 1: output contact is made by die attaching the backside of the die.
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