sep.1998 d e e c e g h k r a b b a n f l m c j g p q c u - m4 thd (2 typ.) s - m8 thd (2 typ.) t - dia. (4 typ.) e g e dimensions inches millimeters a 5.12 130.0 b 4.330.01 110.00.25 c 1.840 46.75 d 1.73+0.04/C0.02 44.0+1.0/C0.5 e 1.46+0.04/C0.02 37.0+1.0/C0.5 f 1.42 36.0 g 1.25 31.8 h 1.18 30.0 j 1.10 28.0 k 1.08 27.5 description: mitsubishi igbt modules are de- signed for use in switching applica- tions. each module consists of one igbt in a single configuration with a reverse-connected super-fast re- covery free-wheel diode. all com- ponents and interconnects are iso- lated from the heat sinking base- plate, offering simplified system as- sembly and thermal management. features: u low drive power u low v ce(sat) u discrete super-fast recovery free-wheel diode u high frequency operation u isolated baseplate for easy heat sinking applications: u ac motor control u motion/servo control u ups u welding power supplies ordering information: example: select the complete part module number you desire from the table below -i.e. CM800HA-24H is a 1200v (v ces ), 800 ampere single igbt module. type current rating v ces amperes volts (x 50) cm 800 24 dimensions inches millimeters l 0.79 20.0 m 0.77 19.5 n 0.75 19.0 p 0.61 15.6 q 0.51 13.0 r 0.35 9.0 s m8 metric m8 t 0.26 dia. dia. 6.5 u m4 metric m4 outline drawing and circuit diagram mitsubishi igbt modules CM800HA-24H high power switching use insulated type
sep.1998 absolute maximum ratings, t j = 25 c unless otherwise specified ratings symbol CM800HA-24H units junction temperature t j C40 to +150 c storage temperature t stg C40 to +125 c collector-emitter voltage (g-e short) v ces 1200 volts gate-emitter voltage (c-e short) v ges 20 volts collector current (t c = 25c) i c 800 amperes peak collector current (t j 150c) i cm 1600* amperes emitter current** (t c = 25c) i e 800 amperes peak emitter current** i em 1600* amperes maximum collector dissipation (t c = 25c) p c 4800 watts mounting torque, m8 main terminal C 8.83 ~ 10.8 n m mounting torque, m6 mounting C 1.96 ~ 2.94 n m mounting torque, m4 terminal C 0.98 ~ 1.47 n m weight C 1600 grams isolation voltage (main terminal to baseplate, ac 1 min.) v iso 2500 vrms *pulse width and repetition rate should be such that the device junction temperature (t j ) does not exceed t j(max) rating. **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). static electrical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units collector-cutoff current i ces v ce = v ces , v ge = 0v C C 5.0 ma gate leakage current i ges v ge = v ges , v ce = 0v C C 0.5 m a gate-emitter threshold voltage v ge(th) i c = 80ma, v ce = 10v 4.5 6.0 7.5 volts collector-emitter saturation voltage v ce(sat) i c = 800a, v ge = 15v C 2.7 3.6 volts i c = 800a, v ge = 15v, t j = 150c C 2.4 C volts total gate charge q g v cc = 600v, i c = 800a, v ge = 15v C 4500 C nc emitter-collector voltage v ec i e = 800a, v ge = 0v C C 3.5 volts * pulse width and repetition rate should be such that device junction temperature rise is negligible. dynamic electrical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units input capacitance c ies C C 180 nf output capacitance c oes v ge = 0v, v ce = 10v C C 64 nf reverse transfer capacitance c res CC 36nf resistive turn-on delay time t d(on) C C 500 ns load rise time t r v cc = 600v, i c = 800a, C C 1200 ns switching turn-off delay time t d(off) v ge1 = v ge2 = 15v, r g = 3.3 w C C 1000 ns times fall time t f C C 350 ns diode reverse recovery time t rr i e = 800a, di e /dt = C1600a/ m s C C 250 ns diode reverse recovery charge q rr i e = 800a, di e /dt = C1600a/ m s C 5.9 C m c thermal and mechanical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case r th(j-c) per igbt C C 0.026 c/w thermal resistance, junction to case r th(j-c) per fwdi C C 0.058 c/w contact thermal resistance r th(c-f) per module, thermal grease applied C C 0.018 c/w mitsubishi igbt modules CM800HA-24H high power switching use insulated type
sep.1998 collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (typical) 0246810 1200 400 0 v ge = 20v 15 12 11 8 7 t j = 25 o c 800 1600 10 9 gate-emitter voltage, v ge , (volts) collector current, i c , (amperes) transfer characteristics (typical) 0 4 8 12 16 20 0 1200 400 800 1600 v ce = 10v t j = 25? t j = 125? collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 5 0 400 800 1200 4 3 2 1 0 v ge = 15v t j = 25? t j = 125? 1600 gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 10 0 4 8 12 16 20 8 6 4 2 0 t j = 25? i c = 320a i c = 1600a i c = 800a 0 0.8 1.6 2.4 3.2 4.0 10 1 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) 10 2 10 4 emitter current, i e , (amperes) t j = 25? 10 3 collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 -1 10 0 10 2 10 3 10 2 10 1 10 0 v ge = 0v 10 1 c ies c oes c res collector current i c , (amperes) switching time, (ns) half-bridge switching characteristics (typical) 10 3 10 4 10 1 10 2 10 3 10 2 10 1 t r t d(off) v cc = 600v v ge = ?5v r g = 4.2 w t j = 125? t d(on) t f emitter current, i e , (amperes) reverse recovery time, t rr , (ns) reverse recovery characteristics (typical) 10 3 10 1 10 2 10 3 10 2 10 1 t rr i rr 10 3 10 2 10 1 reverse recovery current, i rr , (amperes) di/dt = -1600a/ m sec t j = 25? gate charge, q g , (?) gate-emitter voltage, v ge , (volts) gate charge, v ge 20 0 1234 5 16 12 8 4 0 i c = 800a 6 v cc = 600v v cc = 400v mitsubishi igbt modules CM800HA-24H high power switching use insulated type
sep.1998 time, (s) normalized transient thermal impedance, z th(j-c) transient thermal impedance characteristics (igbt) 10 1 10 -5 10 -4 10 -3 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 single pulse t c = 25 c per unit base = r th(j-c) = 0.026 c/w z th = r th ?(normalized value) 10 -1 10 -2 10 -3 time, (s) normalized transient thermal impedance, z th(j-c) transient thermal impedance characteristics (fwdi) 10 1 10 -5 10 -4 10 -3 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 single pulse t c = 25 c per unit base = r th(j-c) = 0.058 c/w z th = r th ?(normalized value) 10 -1 10 -2 10 -3 mitsubishi igbt modules CM800HA-24H high power switching use insulated type
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