lite-on technology corporation. p r o p e r t y o f l i t e - o n o n l y features * selected to specific on-line intensity and radian t intensity ranges * low cost miniature plastic side looking package * mechanically and spectrally matched to the ltr-58 86dhp4-m series of phototransistor package dimensions notes: 1. all dimensions are in millimeters (inches). 2. tolerance is 0.25mm(.010") unless otherwise noted. 3. lead spacing is measured where the leads emerge from the package. 4. specifications are subject to change without not ice. part no. : LTE-329P4-M data sheet (for kinpo only) page : 1 of 4 bns-od-c131/a4
lite-on technology corporation. p r o p e r t y o f l i t e - o n o n l y absolute maximum ratings at t a =25 parameter maximum rating unit power dissipation 75 mw peak forward current (300pps, 10 s pulse) 1 a continuous forward current 50 ma reverse voltage 5 v operating temperature range -10 to + 50 storage temperature range -40 to + 70 lead soldering temperature [1.6mm(.063") from body] 260 for 5 seconds part no. : LTE-329P4-M data sheet (for kinpo only) page : 2 of 4 bns-od-c131/a4
lite-on technology corporation. p r o p e r t y o f l i t e - o n o n l y electrical / optical characteristics at t a =25 parameter symbol min. typ. max. unit test condition. bin no. peak emission wavelength p 930 940 970 nm i f = 20ma spectral line half-width ? 50 nm i f = 20ma forward voltage v f 1.2 1.5 v i f = 20ma reverse current i r 10 a v r = 5v 0.605 0.945 bina axis intensity (light current) setting of lite-on production (average light current of 2 phototransister,(i l1 +i l2 )/2) (i l ) 0.945 1.30 ma i f = 4ma vcc=3.5v binb 0.550 1.050 bina axis intensity (light current) setting of lite-on q.c (average light current of 2 phototransister,(i l1 +i l2 )/2) (i l ) 0.787 1.560 ma i f = 4ma vcc=3.5v binb viewing angle (see fig.6) 2 1/2 40 deg. axis intensity ratio(i l1 /i l2 ) r 0.8 1.0 1.2 infrared axis intensity test method part no. : LTE-329P4-M data sheet (for kinpo only) page : 3 of 4 bns-od-c131/a4
lite-on technology corporation. p r o p e r t y o f l i t e - o n o n l y typical electrical / optical characteristics curves (25 ambient temperature unless otherwise noted) forward voltage (v) fig.3 forward current vs. forward voltage f o r w a r d c u r r e n t ( a ) 0 0.2 0.6 1.0 10 10 10 10 20 40 60 80 100 5.0 4.0 3.0 2.0 1.0 0 0.5 1.0 1040 940 840 1.4 -1 -2 -3 -4 min. max. r e l a t i v e r a d i a n t i n t e n s i t y wavelength (nm) fig.1 spectral distribution 60 50 40 30 20 10 0 f o r w a r d c u r r e n t i f ( m a ) ambient temperature fig.2 forward current vs. ambient temperature ta ( c) o 100 -40 0 -20 20 60 40 80 ambient temperature ta ( c) vs. ambient temperature fig.4 relative radiant intensity -20 o u t p u t p o w e r r e l a t i v e t o v a l u e a t i f = 2 0 m a 0.6 0.2 0 0.4 0.8 1.0 1.2 60 40 20 0 o 80 v a l u e a t i f = 2 0 m a o u t p u t p o w e r r e l a t i v e t o 0 vs. forward current fig.5 relative radiant intensity foward current (ma) 0 r e l a t i v e r a d i a n t i n t e n s i t y fig.6 radiation diagram 0.6 0.5 0.3 0.1 0.2 0.4 0 20 10 o o o 80 o 90 o 70 60 o o 50 40 o o 30 o 0.9 0.7 0.8 1.0 part no. : LTE-329P4-M data sheet (for kinpo only) page : 4 of 4 bns-od-c131/a4
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