RHU002N06 transistors 1/4 switching (60v, 200ma) RHU002N06 ! features 1) low on-resistance. 2) high esd. 3) high-speed switching. 4) low-voltage drive (4v). 5) easily designed drive circuits. 6) easy to use in parallel. ! ! ! ! structure silicon n-channel mosfet transistor ! ! ! ! equivalent circuit (1) source (2) gate (3) drain (1) (3) (2) ? gate protection diode. ? a protection diode has been built in between the gate and the source to protect against static electricity when the product is in use. use the protection circuit when fixed voltages are exceeded. ! ! ! ! external dimensions (units : mm) rohm : umt3 eiaj : sc-70 jedec : sot-323 abbreviated symbol : kp 1.25 2.1 0.3 0.15 0~0.1 0.1min. ( 3 ) 0.9 0.7 0.2 0.65 ( 2 ) 2.0 1.3 ( 1 ) 0.65 each lead has same dimensions (1) source (2) gate (3) drain ! ! ! ! absolute maximum ratings (ta=25 c) v dss v gss i dr p d ? 2 tch 60 v v ma ma mw ?c 20 200 i d i drp ? 1 ma i dp ? 1 ma 800 200 800 200 150 tstg ?c ? 55 + 150 symbol limits unit parameter drain-source voltage gate-source voltage drain current drain reverse current total power dissipation channel temperature storage temperature continuous pulsed continuous pulsed ? 1 pw 10 s, duty cycle 1% ? 2 when using 1 0.75 0.062 inch glass epoxy board.
RHU002N06 transistors 2/4 ! ! ! ! electrical characteristics (ta=25 c) parameter test conditions v gs =0v f=1mhz v ds =10v v gs =10v i d =100ma, v dd 30v r l =300 ? r gs =10 ? a pf ? ms unit v a v pf pf ns ns ns ns nc nc i d =200ma, v gs =10v ? ? 60 ? 1 ? 100 min. ? ? ? ? ? ? ? ? 15 ? ? ? ? 1.7 ? typ. 8 4 6 5 12 95 0.3 0.6 ? 10 ? 1 2.5 2.4 i d =200ma, v gs =4v ? 2.8 4.0 ? max. ? ? ? ? ? ? ? v ds =10v, i d =200ma i d =10 a, v gs =0v v gs =20v, v ds =0v v ds =60v, v gs =0v v ds =10v, i d =1ma nc i d =200ma v gs =10v ? 2.2 4.4 ? ? 2 pulsed ? 1 p w 300 s, duty cycle 1% i gss i dss l y fs l ? 1 c iss symbol c oss c rss t r ? 2 t f ? 2 q gd ? 2 q gs ? 2 q g ? 2 v (br) dss v gs (th) r ds (on) ? 1 t d (on) ? 2 t d (off) ? 2 v dd 30v gate leakage current drain-source breakdown voltage drain cutoff current gate threshold voltage drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ! ! ! ! packaging specifications RHU002N06 type t106 3000 package code basic ordering unit (pieces) taping ! ! ! ! electrical characteristic curves 0.8 0.4 0.3 0.5 0.6 0.7 0.1 0.2 0.0 fig.1 typical output characteristics drain current : i d (a) 0.0 0.5 1.0 1.5 2.0 2.5 4.0 3.0 3.5 drain-source voltage : v ds (v) v gs = 3v 10v 3.5v 8v 6v 4v ta = 25 c pulsed 0.01 0.1 1 1.0 0.5 0.0 1.5 2.0 2.5 3.0 3.5 4.5 4.0 pulsed v ds = 10v ta= ? 25 ? c 25 ? c 75 ? c 125 ? c 0.001 gate-source voltage : v gs (v) fig.2 typical transfer characteristics drain current : i d (a) pulsed v ds = 10v i d = 1ma 2.5 150 ? 50 ? 25 0 1.0 1.5 2.0 0.5 0.0 50 75 100 125 25 channel temperature : tch ( c) gate threshold voltage : v gs (th) (v) fig.3 gate threshold voltage vs. channel temperature
RHU002N06 transistors 3/4 pulsed v gs = 10v 10 1.0 0.01 1.0 0.1 ta = 125 c 75 c ? 25 c 25 c drain current : i d (a) fig.4 static drain-source on-state resistance vs. drain current ( ) static drain-source on-state resistance : r ds (on) ( ? ) pulsed v gs = 4v 10 1.0 0.01 1.0 0.1 ta = 125 c 75 c ? 25 c 25 c drain current : i d (a) fig.5 static drain-source on-state resistance vs. drain current ( ? ) static drain-source on-state resistance : r ds (on) ( ? ) fig.6 static drain-source on-state resistance vs. gate-source voltage 7 5 6 3 2 1 4 0 0 5 10 15 20 gate-source voltage : v gs (v) on-state resistance : r ds (on) ( ? ) static drain-source ta = 25 c pulsed i d =200ma 100ma 1.0 1.5 2.0 2.5 3.0 0 ? 25 50 75 100 125 150 static drain-source on-state resistance : r ds (on) ( ? ) channel temperature : tch ( c) fig.7 static drain-source on-state resistance vs. channel temperature ? 50 25 i d =200ma 100ma v gs =10v pulsed 0.01 0.1 1 0.4 0.2 0.0 0.6 0.8 1.0 1.2 pulsed v gs = 0v ta = 125 c 75 c 25 c ? 25 c 0.001 source-drain voltage : v sd (v) fig.8 reverse drain current vs. source-drain voltage ( ) reverse drain current : i dr (a) 0.01 0.1 10 1 0.4 0.2 0.0 0.6 0.8 1.0 1.2 pulsed ta = 25 c v gs = 10v 0v 0.001 source-drain voltage : v sd (v) fig.9 reverse drain current vs. source-drain voltage ( ? ) reverse drain current : i dr (a) 1 0.1 0.01 0.001 0.001 0.01 0.1 1 v gs =10v pulsed fig.10 forward transfer admittance vs. drain current forward transfer admittance : i yfs i (s) drain current : i d (a) ta =? 25 c 25 c 75 c 125 c 100 10 1 0.01 0.1 1 10 100 ta = 25 c f=1mhz v gs =0v fig.11 typical capacitance vs. drain-source voltage capacitance : c (pf) drain-source voltage : v ds (v) ciss coss crss 1000 10 100 1 1 10 100 1000 ta = 25 c v dd =30v v gs =10v r g =10 ? pulsed fig.12 switching characteristics switching time : t (ns) drain current : i d (ma) tr tf td(on) td(off)
RHU002N06 transistors 4/4 ! ! ! ! switching characteristics measurement circuit fig.13 switching time test circuit v gs r g v ds d.u.t. i d r l v dd 90% 50% 10% 90% 10% 50% pulse width 10% v gs v ds 90% t f t off t d (off) t r t on t d (on) fig.14 switching time waveforms
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