solid state devices, inc. 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404-7855 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com designer?s data sheet powershield tm technology ps-hard radiation hardened mosfets sfrc9130 __ b__ screening 2 / __ = commercial tx = tx level txv = txv level s = s level package: s.5 = smd.5 sfrc9130s.5b 10 amp /100 volts 300 m ? radiation tolerant p-channel mosfet features: ? advanced powershield tm technology ? tid 100k rad ? excellent high temperature stability ? hermetically sealed power package ? low total gate charge ? fast switching ? replacement for irhnj9130 and f9130 types maximum ratings symbol value units drain - source voltage v dss -100 v gate ? source voltage v gs 20 v max. continuous drain current (package limited) @ t c = 25oc @ t c = 100oc i d1 i d2 10 7 a max. avalanche current @ l= 5.0 mh i ar 9.8 a repetitive avalanche energy @ l= 5.0 mh e ar 5.2 mj single pulse avalanche energy @ l= 5.0 mh e as 320 mj total power dissipation @ t c = 25oc p d 75 w operating & storage temperature t op & t stg -55 to +150 oc maximum thermal resistance (junction to case) r 0 jc 1.65 oc/w package outline: smd.5 pinout: pin 1: drain pin 2: source pin 3: gate note: all specifications are subject to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: fr0016a doc .145 .115 .304 .288 .408 .392 .304 .288 3x .020 .010 .030 min .128 .112 .233 .217 2x .010 max 2x .103 .087 .030 min
solid state devices, inc. 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404-7855 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com sfrc9130s.5b electrical characteristics 4 / symbol min typ max units drain to source breakdown voltage v gs = 0v, i d =0.25 ma bv dss -100 ?? ?? v drain to source breakdown voltage temperature coefficient v gs = 0v, i d =0.25 ma dbv dss /dt ?? -0.1 ?? v/ o c drain to source on state resistance v gs = 10v, i d = 5a, tj= 25 o c v gs = 10v, i d = 10a, tj= 25 o c r ds(on) ?? ?? 240 300 300 ?? m ? gate threshold voltage v ds = 5 v, i d = 250 a v gs(th) -2.0 ?? -4.0 v gate to source leakage v gs = 20v i gss ?? 5 100 na zero gate voltage drain current v ds = -100v, v gs = 0v, t j = 25 o c v ds = -80v, v gs = 0v, t j = 125 o c i dss ?? ?? 0.01 1 10 100 a a forward transconductance v ds = 40v, i d = 5a, t j = 25 o c g fs 4 5.2 ?? mho total gate charge gate to source charge gate to drain charge v gs = 10v v ds = 80v i d = 10a q g q gs q gd ?? ?? ?? 30 5.5 1.5 38 ?? ?? nc turn on delay time rise time turn off delay time fall time v gs = 10v v ds = 50v i d = 10a r g = 12 ? t d(on) t r t d(off) t f ?? ?? ?? ?? 15 25 45 25 35 55 100 60 nsec diode forward voltage i f = 10a, v gs = 0v v sd ?? 2.00 4.00 v diode reverse recovery time peak reverse recovery current reverse recovery charge i f = 10a, di/dt = 100a/usec t rr q rr ?? 120 0.55 350 2.5 nsec c input capacitance output capacitance reverse transfer capacitance v gs = 0v v ds = 25v f = 1 mhz c iss c oss c rss ?? ?? ?? 800 160 60 1035 240 90 pf notes: * pulse test: pulse width = 300sec, duty cycle = 2%. 4 / unless otherwise specified, a ll electrical characteristics @25 o c. note: all specifications are subject to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: fr0016a doc
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