?2004 fairchild semiconductor corporation FMG1G150US60LE rev. a igbt FMG1G150US60LE FMG1G150US60LE molding type module general description fairchild igbt power module provides low conduction and switching losses as well as short circuit ruggedness. it?s designed for the applications such as motor control, uninterrupted power supplies (ups) and general inverters where short-circuit ruggedness is required. features ? short circuit rated time; 10us @ t c =100 c, v ge = 15v ? high speed switching ? low saturation voltage : v ce (sat) = 2.1 v @ i c = 150a ? high input impedance ? fast & soft anti-parallel fwd ? ul certified no.e209204 application ? ac & dc motor controls ? general purpose inverters ? robotics ? servo controls ?ups internal circuit diagram c1 e1/c2 e2 g2 e2 package code : 7pm-ga absolute maximum ratings t c = 25 c unless otherwise noted notes : (1) repetitive rating : pulse width limited by max. junction temperature symbol description FMG1G150US60LE units v ces collector-emitter voltage 600 v v ges gate-emitter voltage 20 v i c collector current @ t c = 80 c 150 a i cm (1) pulsed collector current 300 a i f diode continuous forward current @ t c = 80 c 150 a i fm diode maximum forward current 300 a p d maximum power dissipation @ t c = 25 c 595 w t sc short circuit withstand time @ t c = 100 c10 us t j operating junction temperature -40 to +150 c t stg storage temperature range -40 to +125 c v iso isolation voltage @ ac 1minute 2500 v mounting torque power terminal screw : m5 4.0 n.m mounting screw : m6 4.0 n.m
?2004 fairchild semiconductor corporation FMG1G150US60LE rev. a FMG1G150US60LE electrical characteristics of igbt t c = 25 c unless otherwise noted electrical characteristics of diode t c = 25 c unless otherwise noted thermal characteristics symbol parameter test conditions min. typ. max. units off characteristics bv ces collector-emitter breakdown voltage v ge = 0v, i c = 250ua 600 -- -- v ? b vces / ? t j temperature coeff. of breakdown voltage v ge = 0v, i c = 1ma -- 0.6 -- v/ c i ces collector cut-off current v ce = v ces , v ge = 0v -- -- 250 ua i ges gate - emitter leakage current v ge = v ges , v ce = 0v -- -- 100 na on characteristics v ge(th) gate - emitter threshold voltage i c = 150ma, v ce = v ge 5.0 6.5 8.5 v v ce(sat) collector to emitter saturation voltage i c = 150a , v ge = 15v -- 2.1 2.7 v switching characteristics t d(on) turn-on delay time v cc = 300 v, i c = 150a, r g = 2 ? , v ge = 15v, inductive load, t c = 25 c -- 140 -- ns t r rise time -- 80 -- ns t d(off) turn-off delay time -- 120 -- ns t f fall time -- 130 250 ns e on turn-on switching loss -- 2.3 -- mj e off turn-off switching loss -- 4.7 -- mj t d(on) turn-on delay time v cc = 300 v, i c = 150a, r g = 2 ? , v ge = 15v, inductive load, t c = 125 c -- 180 -- ns t r rise time -- 90 -- ns t d(off) turn-off delay time -- 150 -- ns t f fall time -- 270 -- ns e on turn-on switching loss -- 3.1 -- mj e off turn-off switching loss -- 7.7 -- mj t sc short circuit withstand time v cc = 300 v, v ge = 15v @ t c = 100 c 10 -- -- us q g total gate charge v ce = 300 v, i c =150a, v ge = 15v -- 460 -- nc q ge gate-emitter charge -- 130 -- nc q gc gate-collector charge -- 190 -- nc symbol parameter test conditions min. typ. max. units v fm diode forward voltage i f = 150a t c = 25 c -- 1.9 2.8 v t c = 100 c -- 1.8 -- t rr diode reverse recovery time i f = 150a di / dt = 300 a/us t c = 25 c -- 90 130 ns t c = 100 c -- 130 -- i rr diode peak reverse recovery current t c = 25 c -- 15 20 a t c = 100 c -- 22 -- q rr diode reverse recovery charge t c = 25 c -- 675 1270 nc t c = 100 c -- 1430 -- symbol parameter typ. max. units r jc junction-to-case (igbt part, per 1/2 module) -- 0.21 c / w r jc junction-to-case (diode part, per 1/2 module) -- 0.48 c / w r jc case-to-sink (conductive grease applied) 0.045 -- c / w weight weight of module 240 -- g
?2004 fairchild semiconductor corporation FMG1G150US60LE rev. a FMG1G150US60LE \ x w x \ y w y \ z w x w w x w w w common emitter v cc = 300v, v ge = 15v i c = 150a t c = 25 t c = 125 ------ { ? ? ? { ? g g z ? ? ? ? ? ? ? ? g { ? ? ? g ? ? ? ? n ? ? ? g y ? ? ? ? ? ? ? ? ? s g y ? g ? ? ? \ x w x \ y w y \ z w x w x w w x w w w common emitter v cc = 300v, v ge = 15v i c = 150a t c = 25 t c = 125 ------ { ? ? { ? g g z ? ? ? ? ? ? ? ? g { ? ? ? g ? ? ? ? n ? ? ? g y ? ? ? ? ? ? ? ? ? s g y n g ? ? ? y \ \ w ^ \ x w w x y \ x u w x u \ y u w y u \ z u w z u \ [ u w [ u \ ^ \ h x \ w h z w w h j ? ? ? ? ? ? ? ? g t g l ? ? ? ? ? ? g } ? ? ? ? ? ? s g } j l g ? } ? j ? ? ? g { ? ? ? ? ? ? ? ? ? ? s g { j g [ ] common emitter v ge = 15v w x y z [ w \ w x w w x \ w y w w y \ w z w w } n l g d g x w } x \ } x y } y w } common emitter t c = 125 j ? ? ? ? ? ? ? ? g t g l ? ? ? ? ? ? g } ? ? ? ? ? ? s g } j l g ? } ? j ? ? ? ? ? ? ? ? g j ? ? ? ? ? ? s g p j g ? h ? w x y z [ w \ w x w w x \ w y w w y \ w z w w } n l g d g x w } x \ } x y } y w } common emitter t c = 25 j ? ? ? ? ? ? ? ? g t g l ? ? ? ? ? ? g } ? ? ? ? ? ? s g } j l g ? } ? j ? ? ? ? ? ? ? ? g j ? ? ? ? ? ? s g p j g ? h ? x x w w x w w y w w z w w [ w w common emitter v ge = 15v t c = 25 t c = 125 j ? ? ? ? ? ? ? ? g t g l ? ? ? ? ? ? g } ? ? ? ? ? ? s g } j l g ? } ? j ? ? ? ? ? ? ? ? g j ? ? ? ? ? ? s g p j g ? h ? fig 1. typical output characteristics fig 2. typical saturation voltage characteristics fig 3. typical saturation voltage characteristics fig 5. turn-on characteristics vs. gate resistance fig 6. turn-off characteristics vs. gate resistance fig 4. saturation voltage vs. case temperature at variant current level
?2004 fairchild semiconductor corporation FMG1G150US60LE rev. a FMG1G150US60LE x w w x \ w y w w y \ w z w w x x w l ? ? ? l ? ? j ? ? ? ? ? ? ? ? g j ? ? ? ? ? ? s g p j g ? h ? z ? ? ? ? ? ? ? ? g s ? ? ? g ? ? q ? common emitter v ge = 15v, r g = 2 ? t c = 25 t c = 125 ------ g g x w w x \ w y w w y \ w z w w x w w x w w w { ? { ? ? j ? ? ? ? ? ? ? ? g j ? ? ? ? ? ? s g p j g ? h ? z ? ? ? ? ? ? ? ? g { ? ? ? g ? ? ? ? common emitter v ge = 15v, r g = 2 ? t c = 25 t c = 125 ------ g g g g x w w x \ w y w w y \ w z w w x w w x w w w j ? ? ? ? ? ? ? ? g j ? ? ? ? ? ? s g p j g ? h ? common emitter v ge = 15v, r g = 2 ? t c = 25 t c = 125 ------ { ? { ? ? ? z ? ? ? ? ? ? ? ? g { ? ? ? g ? ? ? ? g g \ x w x \ y w y \ z w x x w l ? ? ? l ? ? n ? ? ? g y ? ? ? ? ? ? ? ? ? s g y ? ? ? ? z ? ? ? ? ? ? ? ? g s ? ? ? g ? ? q ? common emitter v cc = 300v, v ge = 15v i c = 150a t c = 25 t c = 125 ------ g g w x w w y w w z w w [ w w \ w w w z ] ` x y x \ common emitter i c = 150a v cc = 300v t c = 25 o c n ? ? ? g j ? ? ? ? ? s g x ? g ? ? j ? n ? ? ? g t g l ? ? ? ? ? ? g } ? ? ? ? ? ? s g } n l g ? } ? g g 01234 0 50 100 150 200 250 300 350 400 common cathode v ge = 0v t c = 25 t c = 125 forward current, i f [a] forward voltage, v f [v] fig 7. switching loss vs. gate resistance fig 8. turn-on characteristics vs. collector current fig 11. gate charge characteristics fig 12. forward characteristics(diode) fig 9. turn-off characteristics vs. collector current fig 10. switching loss vs. collector current
?2004 fairchild semiconductor corporation FMG1G150US60LE rev. a FMG1G150US60LE 0 20 40 60 80 100 120 140 160 5 10 30 i rr t rr t rr common cathode di/dt = 300a/ ? t c = 25 t c = 100 i rr peak reverse recovery current, i rr [a] reverse recovery time, t rr [x10ns] forward current, i f [a] fig 13. reverse recovery characteristics(diode)
?2004 fairchild semiconductor corporation FMG1G150US60LE rev. a FMG1G150US60LE dimensions in millimeters package dimension 7pm-ga
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