322 transistor 2SC1473, 2SC1473a silicon npn triple diffusion planer type for general amplification 2SC1473 complementary to 2sa1018 2SC1473a complementary to 2sa1767 features high collector to emitter voltage v ceo . high transition frequency f t . absolute maximum ratings (ta=25?c) unit: mm parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature 1:emitter 2:collector 3:base eiaj:scC43a to-92-a1 package 5.0 0.2 0.7 0.1 0.45 +0.15 e0.1 2.5 +0.6 e0.2 0.45 +0.15 e0.1 2.5 123 +0.6 e0.2 4.0 0.2 5.1 0.2 12.9 0.5 2.3 0.2 0.7 0.2 symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings 250 300 200 300 7 100 70 750 150 C55 ~ +150 unit v v v ma ma mw ?c ?c 2SC1473 2SC1473a 2SC1473 2SC1473a electrical characteristics (ta=25?c) parameter collector cutoff current collector to emitter voltage emitter to base voltage forward current transfer ratio collector to emitter saturation voltage transition frequency collector output capacitance symbol i ceo v ceo v ebo h fe * v ce(sat) f t c ob conditions v ce = 120v, i b = 0 v ce = 120v, i b = 0 i c = 100 a, i c = 0 i e = 1 a, i c = 0 v ce = 10v, i c = 5ma i c = 50ma, i b = 5ma v cb = 10v, i e = C10ma, f = 200mhz v cb = 10v, i e = 0, f = 1mhz min 200 300 7 30 50 typ 80 max 1 1 220 1.2 10 unit a v v v mhz pf * h fe rank classification rank p q r h fe 30 ~ 100 60 ~ 150 100 ~ 220 2SC1473 2SC1473a 2SC1473 2SC1473a
323 transistor 2SC1473, 2SC1473a p c ta i c v ce i c v be i c i b v ce(sat) i c i b v be h fe i c f t i e c ob v cb 0 160 40 120 80 140 20 100 60 0 1.0 0.8 0.6 0.4 0.2 0.9 0.7 0.5 0.3 0.1 ambient temperature ta ( ?c ) collector power dissipation p c ( w ) 010 8 26 4 0 120 100 80 60 40 20 i b =2ma 1.8ma 1.6ma 1.4ma 1.2ma 1.0ma 0.8ma 0.2ma 0.4ma 0.6ma ta=25?c collector to emitter voltage v ce ( v ) collector current i c ( ma ) 0 2.0 1.6 0.4 1.2 0.8 0 120 100 80 60 40 20 v ce =10v ta=75?c C25?c 25?c base to emitter voltage v be ( v ) collector current i c ( ma ) 0 2.0 1.6 0.4 1.2 0.8 0 120 100 80 60 40 20 v ce =10v ta=25?c base current i b ( ma ) collector current i c ( ma ) 0.1 1 10 100 0.33 30 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =10 ta=75?c 25?c C25?c collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) 0 1.0 0.8 0.2 0.6 0.4 0 3.0 2.5 2.0 1.5 1.0 0.5 v ce =10v ta=25?c base to emitter voltage v be ( v ) base current i b ( ma ) 0.1 1 10 100 0.33 30 0 360 300 240 180 120 60 v ce =10v ta=75?c 25?c C25?c collector current i c ( ma ) forward current transfer ratio h fe C1 C3C10 C30 C100 0 160 120 40 100 140 80 20 60 v cb =10v ta=25?c emitter current i e ( ma ) transition frequency f t ( mhz ) 1 310 30 100 0 10 8 6 4 2 9 7 5 3 1 i e =0 f=1mhz ta=25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf )
324 transistor 2SC1473, 2SC1473a i cbo ta i ebo ta area of safe operation (aso) 0 200 160 40 120 80 1 10 10 2 10 3 10 4 v cb =250v ambient temperature ta ( ?c ) i cbo ( ta ) i cbo ( ta=25?c ) 0 200 160 40 120 80 1 10 10 2 10 3 10 4 v eb =5v ambient temperature ta ( ?c ) i ebo ( ta ) i ebo ( ta=25?c ) 1 10 100 1000 3 30 300 0.1 0.3 1 3 10 30 100 300 1000 single pulse ta=25?c t=10ms 2SC1473a 2SC1473 t=1ms dc i cp i c collector to emitter voltage v ce ( v ) collector current i c ( ma )
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