savantic semiconductor product specification silicon npn power transistors 2sD234 d escription with to-220 package complement to type 2sb434 applications for low frequency power amplifier and switching applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector- base voltage open emitter 60 v v ceo collector- emitter voltage open base 50 v v ebo emitter-base voltage open collector 6 v i c collector current 3 a 1.5 p c collector power dissipation t c =25 25 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2sD234 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =5ma ,i b =0 50 v v (br)cbo collector-base breakdown voltage i c =1ma ,i e =0 60 v v (br)ebo emitter- base breakdown voltage i e =1ma ,i c =0 6 v v cesat collector-emitter saturation voltage i c =3a; i b =0.3a 1.2 v v besat base-emitter saturation voltage i c =3a; i b =0.3a 1.5 v i cbo collector cut-off current v cb =40v; i e =0 10 a i ebo emitter cut-off current v eb =4v; i c =0 10 a h fe dc current gain i c =0.5a ; v ce =1v 40 240 c ob output capacitance i e =0 ; v cb =10v,f=1mhz 90 pf f t transition frequency i c =0.5a ; v ce =10v 3 mhz h fe classifications r o y 40-80 70-140 120-240
savantic semiconductor product specification 3 silicon npn power transistors 2sD234 package outline fig.2 outline dimensions(unindicated tolerance: 0.10 mm)
|
