this document is for maintenance purposes only and is not recommended for new designs
SL2364 very high performance transistor arrays the SL2364 is an array of transistors internally connected to form a dual long-tailed pair with tail transistors. this is a monolithic integrated circuit manufactured on a very high speed bipolar process which has a minimum useable f t of 2.5ghz, (typically 5ghz). the SL2364 is in a 14 so package and a high performance dilmon encapsulation. ds 3305 -2.0 features complete dual long-tailed pair in one package very high f t - typically 5 ghz very good matching including thermal matching applications wide band amplification stages 140 and 560 mbit pcm systems fibre optic systems high performance instrumentation radio and satellite communications 14 13 12 11 10 9 8 7 6 5 4 1 2 3 sub q2 q1 q3 q4 q5 q6 SL2364c fig. 1 pin connections (top view) dc14 mp14 note 1. d v be applies to | v beq3 - v beq4 | and | v beq5 - v beq6 | bv cbo lv ceo bv ebo bv cio h fe f t d v be (see note 1) d v be / t amb c cb c ci max. 5 0.8 1.5 typ. 20 9 5.0 40 80 5 2 -1.7 0.5 1.0 min. 10 6 2.5 16 50 2.5 v v v v ghz mv mv/ c pf pf i c = 10 m a i c = 5ma i e = 10 m a i c = 10 m a i c = 8ma, v ce = 2v i c tail) = 8ma, v ce = 2v i c tail) = 8ma, v ce = 2v i c tail) = 8ma, v ce = 2v v cb = 0 v ci = 0 value characteristics units conditions electrical characteristics these characteristics are guaranteed of the following conditions (unless otherwise stated): t amb = 22 c 2 c advance information
SL2364 typical characteristics absolute maximum ratings maximum individual transistor dissipation 200mw storage temperature -55 c to + 150 c maximum junction temperature + 150 c package thermal resistance ( c/w): chip to case 45 (mp14) 35 (dc14) chip to ambient 123 (mp14) 120 (dc14) vcbo = 10v, vebo = 2 5v vceo = 6v. vcio = 15v ic (any one transistor) = 20ma the substrate should be connected to the most negative point of the circuit to maintain electrical isolation between the transistors. 6 4 2 0 02 46810 f t (ghz) typ i c (ma) 1.1 1.0 0.9 0.8 0.7 -60 -20 +20 +140 +100 +60 temperature ( ? ) normalised f t (typ) f t normalised at +20? v ce = 2v i c = 4.5ma fig. 2 collector current fig. 3 chip temperature
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