1 rf specifications (guaranteed) characteristic symbol min typ max units common source power gain (v dd = 26 v, p out = 10 w, i dq = 80 ma, f = 960 mhz) g ps 15.0 16.5 ? db output power at 1 db compressed (v dd = 26 v, i dq = 80 ma, f = 960 mhz) p-1db 10 12 ? watts drain efficiency (v dd = 26 v, p out = 10 w, i dq = 80 ma, f = 960 mhz) 50 58 ? % load mismatch tolerance (v dd = 26 v, p out = 10 w, i dq = 80 ma, f = 960 mhz? ? ? 10:1 ? all phase angles at frequency of test) all published data at t case = 25c unless otherwise indicated. 0 2 4 6 8 10 12 14 16 0.0 0.1 0.2 0.3 0.4 input power (w atts) output power (watts) 0 10 20 30 40 50 60 70 80 efficiency (%) x v dd = 26 v i dq = 80 ma f = 960 mhz typical output power vs. input power efficiency 2xw s xw 3rzhu ptf 10147 goldmos ? field effect transistor 10 watts, 1.0 ghz package 20244 performance at 960 mhz, 26 volts - output power = 10 watts - efficiency = 58% typ - power gain = 16.5 db typ full gold metallization silicon nitride passivated surface mountable available in tape and reel ? 100% lot traceability description the ptf 10147 is a 10?watt goldmos fet intended for large signal amplifier applications to 1.0 ghz. it operates with 58% effi- ciency and 16.5 db gain. nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. PTF10147
ptf 10147 2 10 12 14 16 18 20 860 880 900 920 940 960 frequency (mhz) 40 50 60 70 80 efficiency (%) x v dd = 26 v i dq = 80 ma typical p out , gain & efficiency (at p-1db) vs. frequency 2xwsxw 3rzhu efficiency gain output power (w) & gain (db) broadband test fixture performance 4 8 12 16 20 920 930 940 950 960 frequency (mhz) gain (db) x 10 25 40 55 70 v dd = 26 v i dq = 80 ma p out = 10 w gain return loss efficiency efficiency (%) return loss (db) - 8 - 9 -10 -11 -12 electrical characteristics (guaranteed) characteristic conditions symbol min typ max units drain-source breakdown voltage v gs = 0 v, i d = 25 ma bv dss 65 ?? volts drain-source leakage current v ds = 28 v, v gs = 0 v i dss ?? 1a gate on voltage v ds = 26 v, i d = 80 ma v gs(on) 3 ? 5 volts maximum ratings parameter symbol value unit drain-source voltage v dss 65 vdc gate-source voltage v gs 20 vdc operating junction temperature t j 200 c total device dissipation p d 46 watts above 25 c derate by 0.26 w/ c storage temperature range t stg ? 40 to +150 c thermal resistance (t case = 70 c) r jc 3.8 c/w typical performance
ptf 10147 3 -70 -60 -50 -40 -30 -20 -10 0 024681012 output power (watts-pep) imd (dbc) v dd = 26 v, i dq = 80 ma f 1 = 959.9 mhz, f 2 = 960.0 mhz intermodulation distortion vs. output power (as measured in a broadband circuit) 3rd order 7th 5th capacitance vs. supply voltage 0 5 10 15 20 25 30 35 40 0 10203040 supply voltage (volts) cds and cgs (pf) x 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 cdg (pf) x c gs c ds c dg v gs = 0 v f = 1 mhz power gain vs. output power 15.0 15.5 16.0 16.5 17.0 17.5 18.0 0110100 output power (watts) power gain (db) x v dd = 26 v f = 960 mhz i dq = 80 ma i dq = 40 ma i dq = 20 ma output power vs. supply voltage 8 9 10 11 12 13 14 15 16 24 26 28 30 32 supply voltage (volts) output power (watts) i dq = 80 ma f = 960 mhz 0.95 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 -20 30 80 130 case temperature ( c) gate-source voltage (v) 0.1 0.29 0.48 0.67 0.86 1.05 voltage normalized to 1.0 v series show current (a) gate-source voltage vs. case temperature typical performance (cont.)
ptf 10147 4 typical scattering parameters (v ds = 26 v, i d = 200 ma) f s11 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 100 0.939 -94.3 22.5 117 0.021 30.6 0.782 -51.1 150 0.917 -117 17.3 101 0.023 14.8 0.714 -65.5 200 0.903 -130 13.5 88.6 0.023 3.14 0.689 -76.1 250 0.898 -139 10.9 79.3 0.023 -5.63 0.691 -85.3 300 0.897 -145 8.90 71.5 0.022 -12.3 0.702 -92.8 350 0.904 -150 7.43 64.9 0.021 -17.9 0.722 -99.7 400 0.908 -154 6.29 58.7 0.020 -23.3 0.741 -106 450 0.910 -156 5.41 53.3 0.018 -27.1 0.763 -111 500 0.916 -159 4.68 48.4 0.017 -30.7 0.784 -116 550 0.919 -161 4.08 44.0 0.016 -32.8 0.802 -120 600 0.924 -163 3.60 40.0 0.014 -35.8 0.814 -125 650 0.931 -165 3.20 36.3 0.013 -37.8 0.835 -128 700 0.934 -166 2.86 33.0 0.012 -40.8 0.846 -131 750 0.937 -168 2.57 29.9 0.011 -40.7 0.850 -135 800 0.936 -169 2.31 26.7 0.009 -41.2 0.866 -138 850 0.942 -171 2.09 24.1 0.008 -40.0 0.875 -140 900 0.948 -172 1.91 21.5 0.007 -37.0 0.884 -142 950 0.947 -173 1.72 19.6 0.006 -38.5 0.879 -145 1000 0.950 -175 1.57 17.3 0.006 -37.7 0.884 -148 1050 0.953 -176 1.45 14.6 0.004 -25.4 0.897 -149 1100 0.956 -177 1.34 12.8 0.004 -17.8 0.896 -151 1150 0.956 -178 1.24 11.5 0.003 -9.27 0.895 -153 1200 0.959 -179 1.13 9.6 0.003 4.67 0.908 -155 1250 0.960 180 1.05 7.6 0.003 18.0 0.909 -156 1300 0.962 179 0.978 5.3 0.003 40.5 0.910 -158 1350 0.966 178 0.912 4.3 0.004 48.5 0.920 -160 1400 0.967 177 0.851 3.2 0.004 61.5 0.922 -161 1450 0.969 176 0.791 0.9 0.004 61.7 0.917 -163 1500 0.972 175 0.747 -0.3 0.005 66.6 0.928 -164 frequency z source z load mhz r jx r jx 860 0.8 3.7 6.0 8.6 880 1.0 3.5 7.0 8.5 900 1.0 3.3 7.6 7.4 920 1.0 3.1 8.4 7.5 960 1.0 2.0 8.7 9.0 z source z load g s d impedance data v dd = 26 v, i dq = 80 ma, p-1db = 10 w z 0 = 50
ptf 10147 5 test circuit test circuit schematic for f = 960 mhz dut ptf 10147 ldmos field effect transistor 1 0.590 960 ghz microstrip 50 2 0.094 960 ghz microstrip 6.6 3 0.085 960 ghz microstrip 6.6 4 0.006 960 ghz microstrip 43 5 0.015 960 ghz microstrip 43 6 0.200 960 ghz microstrip 13.7 7 0.033 960 ghz microstrip 50 8 0.043 960 ghz microstrip 50 c1 2.1 pf capacitor, 100 b 2 r1 c2,c3,c5,c8 36 pf capacitor, 100 b 360 c4 0.2 pf capacitor, 100 b 0r2 c6 0.1 f capacitor, digi-key p4525 c7 100 f, 50 v capacitor, digi-key p5182 c9 2.4 pf capacitor, 100 a 2r4 l1 4 turns, 20 awg, .120" dia i.d. r1, r2, r3 220 1/4 w resistor, digi-key 2.2qbk circuit board .031" thick, r = 4.0, g200, alliedsignal, 2 oz. copper assembly diagram (not to scale)
ptf 10147 6 case outline specifications case 20244 artwork (not to scale) ericsson inc. microelectronics morgan hill, ca 95037 usa specifications subject to change without notice. l3 ? ericsson inc. 1999, 2001-2002 ? all rights reserved eus/kr 1522-ptf 10147 uen rev. b 04-11-02 1-877-goldmos (465-3667) united states +46 8 757 4700 international e-mail: rfpower@ericsson.com www.ericsson.com/rfpower test circuit (cont.)
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