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| SUD50N03-10P siliconix vishay siliconix, 2201 laurelwood road, santa clara, ca 95054 phone (408)988-8000 faxback (408)970-5600 www.siliconix.com s-59916erev. a , 28-sep-98 siliconix was formerly a division of temic semiconductors 1 n-ch 30-v (d-s), 175 c, mosfet pwm optimized new product 30 0.010 @ v gs = 10 v 50 a 30 0.015 @ v gs = 4.5 v 45 d g s n-channel mosfet to-252 s gd top view drain connected to tab order number: SUD50N03-10P drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current (t j = 175 c) t c = 25 c i d 50 a a continuous drain current (t j = 175 c) t c = 100 c i d 40 a pulsed drain current i dm 180 a continuous source current (diode conduction) a i s 50 maximum power dissipation t c = 25 c p d 65 c w maximum power dissipation t a = 25 c p d 5 b w operating junction and storage temperature range t j , t stg 55 to 175 c maximum junction-to-ambient b r thja 30 c/w maximum junction-to-case r thjc 2.3 c/w notes: a. package limited. b. surface mounted on fr4 board, t 10 sec. c. see soa curve for voltage derating. updates to this data sheet may be obtained via facsimile by calling siliconix faxback, 1-408-970-5600. please request faxback document #70822. siliconix SUD50N03-10P vishay siliconix, 2201 laurelwood road, santa clara, ca 95054 phone (408)988-8000 faxback (408)970-5600 www.siliconix.com s-59916erev. a , 28-sep-98 siliconix was formerly a division of temic semiconductors 2 drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 30 v gate threshold voltage v gs(th) v ds = v gs , i ds = 250 a 1 2 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zgvl dic i v ds = 24 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 24 v, v gs = 0 v, t j = 125 c 50 v ds = 24 v, v gs = 0 v, t j = 175 c 150 on-state drain current b i d(on) v ds = 5 v, v gs = 10 v 50 a dis os r i b v gs = 10 v, i d = 25 a 0.0075 0.010 drain-source on-state resistance b r ds(on) v gs = 10 v, i d = 15 a, t j = 125 c 0.016 drain - source on - state resistance b r ds( on ) v gs = 10 v, i d = 15 a, t j = 175 c 0.019 v gs = 4.5 v, i d = 15 a 0.011 0.015 forward transconductance b g fs v ds = 15 v, i d = 15 a 20 40 s input capacitance c iss v 0 v v 25 v f 1 mh 2700 f output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 680 pf reversen transfer capacitance c rss 360 total gate charge c q g v15vv10vi50a 45 70 c gate-source charge c q gs v ds = 15 v, v gs = 10 v, i d = 50 a 8.5 nc gate-drain charge c q gd 9.5 turn-on delay time c t d(on) 12 20 rise time c t r v dd = 15 v, r l = 0.3 7 15 ns turn-off delay time c t d(off) dd , l i d 50 a, v gen = 10 v, r g = 2.5 35 60 ns fall time c t f 12 20 continuous current i s 50 a pulsed current i sm 180 a forward voltage b v sd i f = 50 a, v gs = 0 v 1.2 1.5 v reverse recovery time t rr i f = 50 a, di/dt = 100 a/ s 40 80 ns notes: a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%. c. independent of operating temperature. SUD50N03-10P siliconix vishay siliconix, 2201 laurelwood road, santa clara, ca 95054 phone (408)988-8000 faxback (408)970-5600 www.siliconix.com s-59916erev. a , 28-sep-98 siliconix was formerly a division of temic semiconductors 3 typical characteristics (25 c unless otherwise noted) 0 1000 2000 3000 4000 0 6 12 18 24 30 0 2 4 6 8 10 0 1020304050 0 20 40 60 80 0 1020304050 0 0.005 0.010 0.015 0.020 0.025 0.030 0 20406080100 0 20 40 60 80 100 012345 0 30 60 90 120 150 180 0246810 v ds drain-to-source voltage (v) v gs gate-to-source voltage (v) drain current (a) i d gate-to-source voltage (v) q g total gate charge (nc) i d drain current (a) v ds drain-to-source voltage (v) c capacitance (pf) v gs transconductance (s) g fs 25 c 55 c 3 v t c = 125 c v ds = 15 v i d = 50 a v gs = 10 thru 7 v 5 v v gs = 10 v c iss c oss c rss t c = 55 c 25 c 125 c 4 v v gs = 4.5 v on-resistance ( r ds(on) ) drain current (a) i d 6 v i d drain current (a) siliconix SUD50N03-10P vishay siliconix, 2201 laurelwood road, santa clara, ca 95054 phone (408)988-8000 faxback (408)970-5600 www.siliconix.com s-59916erev. a , 28-sep-98 siliconix was formerly a division of temic semiconductors 4 typical characteristics (25 c unless otherwise noted) 0 0.4 0.8 1.2 1.6 2.0 2.4 50 25 0 25 50 75 100 125 150 175 & " ! ! ! & # t j junction temperature ( c) v sd source-to-drain voltage (v) source current (a) i s 100 10 1 0.3 0.6 0.9 1.2 1.5 v gs = 10 v i d = 50 a t j = 25 c t j = 150 c (normalized) on-resistance ( r ds(on) ) 0 thermal ratings 0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 v ds drain-to-source voltage (v) 1000 10 0.1 1 10 100 1 100 t c = 25 c single pulse $! ! " ! t c case temperature ( c) drain current (a) i d 1 ms 10 ms 100 ms dc 10 s 100 s % ! & & square wave pulse duration (sec) 2 1 0.1 0.01 10 4 10 3 10 2 10 1 1 normalized effective transient thermal impedance 3 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 drain current (a) i d limited by r ds(on) 1. duty cycle, d = 2. per unit base = r thja = 30 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm |
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