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| savantic semiconductor product specification silicon npn power transistors 2SD2599 d escription with to-3p(h)is package high voltage;high speed low saturation voltage bult-in damper diode applications horizontal deflection output for color tv pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 600 v v ebo emitter-base voltage open collector 5 v i c collector current 3.5 a i cm collector current-peak 7 a i b base current 1 a p c total power dissipation t c =25 40 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3p(h)is) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD2599 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter-base breakdown voltage i c =300ma ;i b =0 5 v v cesat collector-emitter saturation voltage i c =3a; i b =0.8a 5 8 v v besat base-emitter saturation voltage i c =3a; i b =0.8a 0.9 1.5 v i cbo collector cut-off current v cb =1500v; i e =0 1 ma i ebo emitter cut-off current v eb =5v; i c =0 66 200 ma h fe dc current gain i c =0.5a ; v ce =5v 8 25 v f diode forward voltage i f =3.5a 1.5 2.0 v c ob collector output capacitance i e =0 ; v cb =10v,f=1mhz 55 pf f t transition frequency i c =0.1a ; v ce =10v 3 mhz switching times : t s storage time 7.5 10 s t f fall time i cp =3a;i b1 =0.8a f h =15.75khz 0.5 1.0 s savantic semiconductor product specification 3 silicon npn power transistors 2SD2599 package outline fig.2 outline dimensions (unindicated tolerance: 0.20 mm) savantic semiconductor product specification 4 silicon npn power transistors 2SD2599 |
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