? semiconductor components industries, llc, 2002 january, 2002 rev. 0 1 publication order number: mmt05b064t3/d mmt05b064t3 preferred devices thyristor surge protectors high voltage bidirectional tspd these thyristor surge protective devices (tspd) prevent overvoltage damage to sensitive circuits by lightning, induction and power line crossings. they are breakovertriggered crowbar protectors. turnoff occurs when the surge current falls below the holding current value. secondary protection applications for electronic telecom equipment at customer premises. ? high surge current capability: 50 amps 10 x 1000 m sec, for controlled temperature environments ? the mmt05b064t3 series is used to help equipment meet various regulatory requirements including: bellcore 1089, itu k.20 & k.21, iec 950, ul 1459 & 1950 and fcc part 68. ? bidirectional protection in a single device ? little change of voltage limit with transient amplitude or rate ? freedom from wearout mechanisms present in nonsemiconductor devices ? failsafe, shorts when overstressed, preventing continued unprotected operation ? surface mount technology (smt) ? indicates ul recognized file #e210057 ? device marking: mmt05b064t3: rpbc maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit offstate voltage maximum v dm 62 volts maximum pulse surge short circuit current nonrepetitive double exponential decay waveform (notes 1 and 2) 10 x 1000 m sec (25 c initial temperature) 8 x 20 m sec 10 x 160 m sec 10 x 560 m sec i pps1 i pps2 i pps3 i pps4 50 150 100 70 a(pk) maximum nonrepetitive rate of change of onstate current double exponential waveform, r = 1.0, l = 1.5 m h, c = 1.67 m f, i pk = 70a di/dt 100 a/ m s 1. allow cooling before testing second polarity. 2. measured under pulse conditions to reduce heating. bidirectional tspd 50 amp surge 64 volts preferred devices are recommended choices for future use and best overall value. device package shipping ordering information mmt05b064t3 smb 12mm tape and reel (2.5k/reel) http://onsemi.com mt1 mt2 smb (no polarity) (essentially jedec do214aa) case 403c () rpbc = specific device code y = year ww = work week marking diagrams yww rpbc
mmt05b064t3 http://onsemi.com 2 thermal characteristics characteristic symbol max unit operating temperature range blocking or conducting state t j1 40 to +125 c overload junction temperature maximum conducting state only t j2 +175 c maximum lead temperature for soldering purposes 1/8 from case for 10 seconds t l 260 c electrical characteristics (t j = 25 c unless otherwise noted) devices are bidirectional. all electrical parameters apply to forward and reverse polarities. characteristics symbol min typ max unit breakover voltage (both polarities) (dv/dt = 100 v/ m s, i sc = 1.0 a, vdc = 1000 v) (+65 c) v (bo) 80 82 volts breakover voltage (both polarities) (f = 60 hz, i sc = 1.0 a(rms), v oc = 1000 v(rms), r i = 1.0 k w , t = 0.5 cycle) (note 3) (+65 c) v (bo) 80 82 volts breakover voltage temperature coefficient dv (bo) /dt j 0.054 v/ c breakdown voltage (i (br) = 1.0 ma) both polarities v (br) 72 volts off state current (v d1 = 50 v) both polarities off state current (v d2 = v dm ) both polarities i d1 i d2 2.0 5.0 m a onstate voltage (i t = 1.0 a) (pw 300 m s, duty cycle 2%) (note 3) v t 1.50 3.0 volts breakover current (f = 60 hz, v dm = 1000 v(rms), r s = 1.0 k w ) both polarities i bo 91 ma holding current (both polarities) (note 3) v s = 500 volts; i t (initiating current) = 1.0 amp (+65 c) i h 175 130 300 ma critical rate of rise of offstate voltage (linear waveform, v d = rated v br , t j = 25 c) dv/dt 2000 v/ m s capacitance (f = 1.0 mhz, 50 vdc, 1.0 v rms signal) capacitance (f = 1.0 mhz, 2.0 vdc, 1.0 v rms signal) c o 42 81 85 pf 3. measured under pulse conditions to reduce heating.
mmt05b064t3 http://onsemi.com 3 + current + voltage v tm v (bo) i (bo) i d2 i d1 v d1 v d2 v (br) i h symbol parameter i d1 , i d2 off state leakage current v d1 , v d2 off state blocking voltage v br breakdown voltage v bo breakover voltage i bo breakover current i h holding current v tm on state voltage voltage current characteristic of tspd (bidirectional device) v br , breakdown voltage (volts) i d1 , offstate current ( m a) figure 1. typical offstate current versus temperature temperature ( c) 140 120 100 80 60 0 40 60 10 1 0.1 0.01 0.001 figure 2. typical breakdown voltage versus temperature temperature ( c) v d1 = 50v 0 60 1 40 78 76 74 72 70 68 66 80 40 20 20 20 40 20 40 120 100 60 80
mmt05b064t3 http://onsemi.com 4 current (a) i pp peak pulse current %i pp i h , holding current (ma) v bo , breakover voltage (volts) figure 3. maximum breakover voltage versus temperature figure 4. typical holding current versus temperature temperature ( c) 700 40 100 temperature ( c) 40 0 60 140 84 82 80 78 76 74 86 time (sec) 100000 1000 100 10 250 150 50 figure 5. exponential decay pulse waveform figure 6. peak surge onstate current versus surge current duration, sinusoidal waveform 40 20 20 60 120 100 80 600 500 400 300 200 20 0 20 40 60 80 100 120 time ( s) 0 50 0 100 t r = rise time to peak value t f = decay time to half value t r t f peak value half value 70 90 110 130 210 230 170 190
mmt05b064t3 http://onsemi.com 5 telecom equipment outside plant tip ring gnd telecom equipment outside plant tip ring gnd telecom equipment outside plant tip ring gnd pptc* pptc* heat coil heat coil *polymeric ptc (positive temperature coefficient) overcurrent protection device
mmt05b064t3 http://onsemi.com 6 minimum recommended footprint for surface mounted applications surface mount board layout is a critical portion of the total design. the footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. with the correct pad geometry, the packages will self align when subjected to a solder reflow process. smb 0.085 2.159 0.108 2.743 0.089 2.261 mm inches
mmt05b064t3 http://onsemi.com 7 package dimensions a s d b j p k c h notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. d dimension shall be measured within dimension p. dim min max min max millimeters inches a 0.160 0.180 4.06 4.57 b 0.130 0.150 3.30 3.81 c 0.075 0.095 1.90 2.41 d 0.077 0.083 1.96 2.11 h 0.0020 0.0060 0.051 0.152 j 0.006 0.012 0.15 0.30 k 0.030 0.050 0.76 1.27 p 0.020 ref 0.51 ref s 0.205 0.220 5.21 5.59 smb (no polarity) (essentially jedec do214aa) case 403c01 issue o
mmt05b064t3 http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mmt05b064t3/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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