features trenchfet power mosfet optimized for high- or low-side new low thermal resistance package applications dc/dc converters synchronous rectifiers SUM70N03-09CP vishay siliconix document number: 71943 s-03561?rev. c, 12-mar-03 www.vishay.com 1 n-channel 30-v (d-s), 175 c mosfet product summary v (br)dss (v) r ds(on) ( ) i d (a) 30 0.0095 @ v gs = 20 v 70 30 0.014 @ v gs = 4.5 v 58 d g s n-channel mosfet SUM70N03-09CP to-263 s g top view d drain connected to tab absolute maximum ratings (t c = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 gate-source voltage v gs 20 v continuous drain current (t j = 175 c) t c = 25 c i d 70 continuous drain current (t j = 175 c) t c = 125 c i d 40 a pulsed drain current i dm 100 a avalanche current i ar 35 repetitive a valanche energy a l = 0.1 mh e ar 61 b mj maximum power dissipation a t c = 25 c p d 93 w maximum power dissipation a t a = 25 c c p d 3.75 w operating junction and storage temperature range t j , t stg - 55 to 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount c r thja 40 c/w junction-to-case r thjc 1.6 c/w notes a. duty cycle 1%. b. see soa curve for voltage derating. c. when mounted on 1? square pcb (fr-4 material).
SUM70N03-09CP vishay siliconix www.vishay.com 2 document number: 71943 s-03561?rev. c, 12-mar-03 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ a max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 30 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 3.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 24 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 24 v, v gs = 0 v, t j = 125 c 250 a on-state drain current b i d(on) v ds = 5 v, v gs = 10 v 100 a v gs = 10 v, i d = 20 a 0.0076 0.0095 drain-source on-state resistance b r ds(on) v gs = 10 v, i d = 20 a, t j = 175 c 0.015 drain source on state resistance r ds(on) v gs = 4.5 v, i d = 20 a 0.0115 0.014 forward transconductance b g fs v ds = 15 v, i d = 20 a 20 s dynamic a input capacitance c iss 2200 output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 410 pf reverse transfer capacitance c rss 180 p gate resistance r g 1.5 total gate charge c q g 31 45 gate-source charge c q gs v ds = 15 v, v gs = 10 v, i d = 50 a 7.5 nc gate-drain charge c q gd v ds 15 v, v gs 10 v, i d 50 a 5.0 nc turn-on delay time c t d(on) 9 15 rise time c t r v dd = 15 v, r l = 0.3 80 120 ns turn-off delay time c t d(off) v dd = 15 v , r l = 0 . 3 i d 50 a, v gen = 10 v, r g = 2.5 22 35 ns fall time c t f 8 12 source-drain diode ratings and characteristic (t c = 25 c) pulsed current i sm 100 a diode forward voltage b v sd i f = 50 a, v gs = 0 v 1.2 1.5 v source-drain reverse recovery time t rr i f = 50 a, di/dt = 100 a/ s 35 70 ns notes a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%. c. independent of operating temperature. typical characteristics (25 c unless noted) 0 30 60 90 120 0246810 0 30 60 90 120 0123456 output characteristics transfer characteristics v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d 25 c -55 c 5 v t c = 125 c v gs = 10 thru 6 v 3 v 4 v 2 v
SUM70N03-09CP vishay siliconix document number: 71943 s-03561?rev. c, 12-mar-03 www.vishay.com 3 typical characteristics (25 c unless noted) 0 2 4 6 8 10 0 6 12 18 24 30 0.00 0.01 0.02 0.03 0.04 0.05 0 20406080100 0 20 40 60 80 100 0 1020304050 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 30 capacitance gate charge transconductance on-resistance vs. drain current - gate-to-source voltage (v) - on-resistance ( q g - total gate charge (nc) i d - drain current (a) v ds - drain-to-source voltage (v) c - capacitance (pf) r ds(on) ) v gs - transconductance (s) g fs v ds = 15 v i d = 30 a v gs = 10 v v gs = 4.5 v c rss t c = - 55 c 25 c 125 c c iss i d - drain current (a) c oss (normalized) - on-resistance ( r ds(on) ) 0.0 0.4 0.8 1.2 1.6 2.0 - 50 - 25 0 25 50 75 100 125 150 175 on-resistance vs. junction t emperature source-drain diode forward voltage t j - junction temperature ( c) v sd - source-to-drain voltage (v) - source current (a) i s 100 1 0.3 0.6 0.9 1.2 1.5 v gs = 10 v i d = 30 a t j = 25 c t j = 150 c 0 10
SUM70N03-09CP vishay siliconix www.vishay.com 4 document number: 71943 s-03561?rev. c, 12-mar-03 thermal ratings 0 15 30 45 60 75 90 0 25 50 75 100 125 150 175 safe operating area v ds - drain-to-source voltage (v) - drain current (a) i d 1000 10 0.01 0.1 1 10 100 1 100 t a = 25 c single pulse maximum drain current vs. ambiemt t emperature t a - ambient temperature ( c) - drain current (a) i d 1 ms 10 ms 100 ms dc 10, 100 s 1 s 0.1 10 s 100 s limited by r ds(on) 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 110 0.2 0.1 duty cycle = 0.5 100 normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) normalized effective transient thermal impedance 0.05 0.02 single pulse
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